Part Number: AO4407A

Manufacturer: Alpha & Omega Semiconductor Inc.

Description: MOSFET P-CH 30V 12A 8SOIC

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of AO4407A

Datasheet  AO4407A datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tape & Reel (TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 12A (Ta)
Rds On (Max) @ Id, Vgs 11 mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 15V
Power – Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154″, 3.90mm Width)
Supplier Device Package 8-SOIC

The AO4407A is a type of MOSFET that operates on a voltage of 30V and comes in a package of the SOIC-8 type. The AO4407A uses cutting-edge trench technology to deliver exceptional RDS (ON) while maintaining an extremely low gate charge and a gate rating of 25V. This gadget can be used in PWM applications and as a load switch.

AO4407A Features

The following are features of AO4407A MOSFET.

  • P-Channel is a specific kind of control channel.
  • It can dissipate 3.1 W of maximum power.
  • It can withstand a maximum drain-source voltage of 30 V.
  • It has a 25 V |Vgs| Maximum Gate-Source Voltage.
  • Maximum Gate-Threshold Voltage  Vgs(th) is 3 V.
  • A 12 A maximum drain current is available from it.
  • The maximum Junction Temperature (Tj) of 150 °C is its maximum value.
  • There is a 9.4 nS Rise Time (tr) for it.
  • Drain-Source Capacitance (Cd): 370 pF
  • It has a Maximum Drain-Source On-State Resistance (Rds) of 0.013 Ohm

Equivalents for AO4407A

AO4402 ,  AO4314 , AO4409 , AO4354 , AO4403 , AO4404B , AO4405 , AO4413 , AO4406A , AO4407 , IRF530 ,  AO4421 , AO4410 , AO4419 ,  AO4411 , AO4415 , AO4420 ,

Where to apply it AO4407A

The AO4407A P-Channel MOSFET can be used in applications involving PWM and is also ideal for use as a load switch. The product specifications for the AO4407A are as follows.

●  VDS = -30V.

● VGS = -20V; ID = -12A.

● 11m RDS (ON) (VGS = -20V).

● 13m RDS (ON) (VGS = -10V).

● 17m RDS (ON) (VGS = -6V).

● Totally UIS tested.

● Rg tested to 100%.

AO4407A Manufacturer

Alpha and Omega Semiconductor (AOS) designs, develops and distributes power semiconductors worldwide. Their offerings include Power MOSFETs and Power Integrated Circuits. In order to differentiate itself from competitors, AOS integrates its expertise in process technology, device physics, design, and advanced packaging to optimize product performance and cost. The company’s product line is designed to satisfy the steadily increasing standards for power efficiency in high-volume applications such power supplies, battery packs, portable computers, portable media players, and portable computers.

Frequently Asked Questions

What is the use of AO4407A?

The AO4407A’s high-quality RDS (ON) and extremely low gate charge (25V gate rated) result from its utilization of cutting-edge trench technology; this component can function as a load switch or be utilized in pulse width modulation systems.

What applications does the AO4407A suit?

PWM applications or a load switch.

What kind of MOSFET does AO4407A come in?

SOIC-8 Type

Which MOSFET type is the AO4407A?

30V P-Channel MOSFET

What is P-Channel MOSFET?

A MOSFET is created when a substrate with a light amount of N-type doping is linked to two materials with a high amount of doping of the P-type. Doping refers to adding a certain quantity or concentration of an impure substance to the atom.

How does P-Channel MOSFET work?

The operation of the P-channel MOSFET is predicated on the produced or existing channel and the concentration of most charge carriers within the channel. In this particular instance, the holes constitute most of the carriers.

P Channel with Enhancement MOSFET

The n-substrate, which is mildly doped, was used in the design of this MOSFET. The two highly doped p-type materials are separated from one another by the length (L). The length of the channel is denoted by the number L.

The substrate is given a thin coating of type silicon dioxide, which is then placed on top. The layer in question is typically referred to as the dielectric layer. The two P types each make up the circuit’s source or drain. The gate terminal is made of aluminium plating placed on the dielectric material. The ground connection is made at the MOSFET’s source and body.

The gate terminal has been subjected to a voltage in the negative range. Because of the effect that capacitance has, the positive concentration of charges eventually becomes settled lower at the layer that is known as dielectric. Because of the repulsive forces, the electrons at the n substrate shift, and the value of the uncovered positive ions layer may be discovered there. This occurs because of repulsive forces. A bond is formed when a minority carrier, such as a hole, in an n-type substrate, joins with a small number of the substrate’s electrons.

However, continued application of the negative voltage destroys the covalent bonds, and, as a result, the pairs that were generated between electrons and holes also fall apart. This formation causes the development of holes, which in turn causes an increase in the carrier concentration of holes in the channel, which leads to an increase in the concentration of holes. Since the channel becomes conductive when a negative voltage is given to the drain terminal, the transistor can carry out its function of allowing current to flow through it.

P Channel Depletion MOSFET

When contrasted with the production of n channel depletion in a MOSFET, the formation of p channel depletion occurs exactly in reverse. The impurities of the p-type that are present in it are responsible for the pre-build of the channel in this case. When a negative voltage value is supplied at the terminal gate, free holes, which represent the minority carriers in an n-type semiconductor, are drawn into the channel of positive-type impurity ions. This happens because the free holes represent the minority carriers. Under these circumstances, when a drain terminal is reverse biased, the device begins conducting; however, as the negative voltage in the drain terminal is increased, this causes the depletion layer to form.

The concentration of the layer that is created as a result of the positive ions has a direct effect on this region. The magnitude of the value of the conductivity of the channel is influenced by the breadth of the zone of depletion. The current that flows through the terminal can be made to behave in a desired manner by manipulating the region’s voltage value. In conclusion, both the gate and the drain exhibit a negative polarity, whilst the source maintains its value of zero throughout the process.


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