Part Number: AT25DF321A-SH-T
Manufacturer: Dialog Semiconductor
Description: NOR Flash 32 Mbit, 3.0V (2.7V to 3.6V), -40C to 85C, SOIC-W 208mil (Tape & Reel), Single, Dual SPI NOR flash
Shipped from: Shenzhen/HK Warehouse
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| Datasheet |  AT25DF321A-SH-T datasheet |
|---|---|
| Category | Integrated Circuits (ICs) |
| Family | Memory |
| Manufacturer | Adesto Technologies |
| Series | – |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Format – Memory | FLASH |
| Memory Type | FLASH |
| Memory Size | 32M (16384 pages x 256 Bytes) |
| Speed | 100MHz |
| Interface | SPI, RapidS |
| Voltage – Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Package / Case | 8-SOIC (0.209″, 5.30mm Width) |
| Supplier Device Package | 8-SOIC |
The Atmel® AT25DF321A-SH-T is a serial interface flash memory device created for a wide range of high-volume consumer applications. Program code is copied from flash memory into embedded or external ram for execution. The AT25DF321A-SH-T ‘s flexible erase design and erase granularity of up to 4 kBytes make it perfect for data storage, negating the need for additional EEPROM devices.
Has a single 2.7 to 3.6-volt supply.
Compatible with a serial peripheral interface (spi)
Application-specific semiconductors, Low-power flash memory, and embedded systems, all manufactured by Adesto, are the fundamental building blocks of IoT edge devices running on networks worldwide. Non-volatile memory, analog, and digital IP, IoT edge servers, network nodes, routers, and communication modules are just a few of the many items they offer. For applications in consumer, communication, industrial, and medical settings, these solutions boost equipment output and cut costs.
There are several benefits and drawbacks to using EEPROM or Flash memory devices, including:
Although this lengthens the time it takes to clear and edit the device, EEPROMs operate their erase functions on a byte-by-byte basis, allowing engineers to change particular areas if necessary. Flash memory can wipe the device in big chunks of data, greatly accelerating the erase process and enabling the device to store data more densely. However, as a result, it also loses the capacity to modify specific bytes, necessitating the rewriting of whole data blocks whenever changes are made.
A memory device will gradually deteriorate over time if it undergoes numerous erase and write cycles. The increased longevity of EEPROM is one of its benefits. Up to 1,000,000 erase/rewrite cycles can be completed on an EEPROM during its lifetime. Depending on the type of Flash memory, Flash devices have a short lifespan; most flash products can endure 10,000–1,000,000 erase/write cycles before the wear starts to compromise the storage’s integrity.
Furthermore, Flash memory is less expensive to construct and has lower memory cell sizes than EEPROM in terms of size and cost.
Flash memory, commonly referred to as flash storage, is a non-volatile memory that rewrites data at the byte level and erases data in units called blocks. Consumer electronics, business systems, and industrial applications frequently use flash memory for data storage and transfer. Whether a flash-equipped device is powered on or off, flash memory keeps data for a long time.
Density, boot block size, word count, bits per word, gate technology, and unique features all differ between flash memory chips. The chip’s density is its bit-carrying capacity. A secured block called the boot block size is used to hold boot codes. The total number of words and rows, each of which holds a memory word and is connected to a word line for addressing purposes, matches the total number of words.
The quantity of columns that each have a sense/write circuit connection determines how many bits there are in a word. Some Flash memory chips support the serial access gate or NAND technologies. Other devices support the NOR or random access gate technology.
Flash memory chips provide the ability to read data page-by-page or in bursts of bits. Flash memory chips with read-while-write (RWW) functionality allow for simultaneous reading and writing.
A memory array with several flash cells stacked on it is part of flash memory architecture. A fundamental flash memory cell comprises a storage transistor with a floating gate and a control gate that is separated from the rest of the transistor by a thin oxide or dielectric layer. While storing the electrical charge, the floating gate controls the flow of electrical current.
By adding or removing electrons from the floating gate, the storage transistor’s threshold voltage can be changed. Voltage adjustments influence whether a cell is configured as a zero or a one.
The process of Fowler-Nordheim tunneling is used to remove electrons from the floating gate. Either channel hot-electron injection or Fowler-Nordheim tunneling traps the electrons in the floating gate.
By giving the control gate a significant negative charge, data can be destroyed utilizing Fowler-Nordheim tunneling. As a result, electrons are forced to enter the positively charged channel.
The opposite happens when Fowler-Nordheim tunneling is used to trap electrons in the floating gate. In the presence of a strong electric field, electrons can pass through the thin oxide layer to the floating gate if the cell’s source and drain have strong negative charges and the control gate has a strong positive charge.
Hot-carrier injection, another name for channel hot-electron injection, allows electrons to penetrate the gate oxide and modify the threshold voltage of the floating gate. This innovation happens when the control gate’s attracting charge and the channel’s high current supply electrons with enough energy.
For data storage and transmission in consumer electronics, business systems, and industrial applications, flash memory is frequently used. Whether a device equipped with flash memory is powered on or off, flash memory retains data for a long time.
SPI Non-volatile memory is referred to as including EEPROMs and flash memory. Non-volatile memory allows for data storage even when a device is turned off since it can keep data without requiring constant power. They are microcontroller-based applications that may be used on or off-chip to store data and have electronically written and erasable memory.
The architecture and processes for writing, reading, and deleting data in EEPROM and Flash memory devices are slightly different, even though both may store data utilized in embedded devices.
Electrically Erasable Programmable Read-Only Memory, or EEPROM, is a form of memory that allows data to be read, written, and erased at the byte level. On the other hand, a type of EEPROM called flash memory is structurally organized in blocks, allowing data to be read or written at the byte level while being erased at the block level.
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