Part Number: DE150-501N04A

Manufacturer: IXYS

Description: RF MOSFET Transistors

Shipped from: Shenzhen/HK Warehouse

Stock Available: Check with us

The DE150-501N04A is an N-Channel Enhancement Mode Avalanche. Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET

DE150-501N04A Features

Isolated Substrate

  • High (>2500V) isolation voltage.
  • Remarkable thermal transfer.
  • Power and temperature increase.

Cycling capability

  • IXYS low Qg advanced process

Low gate charge and capacitances

  • Easier to drive
  • Faster switching

Low RDS (on)

Very low insertion inductance (<2nH)

No beryllium oxide (BeO) or other hazardous materials


● RF and high-speed switching optimized for frequencies up to >100MHz.

● Needed insulators are simple to mount.

● A lot of power density.

Product Technical Specifications

EU RoHS Compliant
Part Status Obsolete
Automotive No
Mounting Surface Mount
Package Height 3.18
Package Width 13.72
Package Length 12.7
PCB changed 6
Pin Count 6

What is a Power MOSFET?

When it comes to metal-oxide-semiconductor field-effect transistors (MOSFETs), a power MOSFET is a special kind that manages large amounts of power. Its key benefits are high switching speed and good efficiency at low voltages compared to other power semiconductor devices like an insulated-gate bipolar transistor (IGBT) or a thyristor. It shares an accessible gate with the IGBT, making driving simple. They occasionally have low gain to the point where a gate voltage more significant than the voltage under control is required.

The development of MOSFET and CMOS technology used to make integrated circuits since the 1960s allowed for the invention of power MOSFETs. The lateral MOSFET, the high-power equivalent of the power MOSFET, operates on the same principles. The conventional MOSFET was modified to create the power MOSFET, first made available in the 1970s and is frequently used in power electronics.

Due to its low gate drive power, quick switching speed, straightforward advanced paralleling capability, wide bandwidth, robustness, easy drive, straightforward biasing, ease of application, and ease of repair, the power MOSFET is the most widely used power semiconductor device in the world. It is precisely the low-voltage (less than 200 V) switch that is utilized the most frequently. Numerous devices use it in various applications, including most power supplies, DC-to-DC converters, low-voltage motor controllers, and many more.

What is RF Transistor?

The high-power radio frequency (RF) signals produced by electronics like radio transmitters, stereo amplifiers,  and television monitors are handled by MOSFET RF transistors, which are metal-oxide field effect transistors. They perform the role of a small electronic switch by being turned on and off by input voltages. MOSFET RF transistors are made of materials like silicon (Si) or germanium (Ge), like other semiconductor devices, and their electrical characteristics are modified by doping them with impurities.

To modulate the current flowing between the source and drain, voltage is supplied between the gate and source terminals. A thin layer of oxide insulation often stops current flow between the gate and a conductive channel in the semiconductor substrate. The N-channel and P-channel are the two primary categories of MOSFET RF transistors. Electrons are used by N-channel devices to conduct. Through “holes,” P-channel devices conduct electricity. Most of the channel’s carriers in both types of devices determine the polarity of the electric field regulating the channel’s current.

Selecting RF MOSFET Transistors

It is necessary to analyze performance parameters before choosing MOSFET RF transistors. When the gate is grounded, the drain-source breakdown voltage is the highest drain-to-source voltage before breakdown. The ratio of output power to input power is known as power gain and is used to quantify power amplification. The noise figure, which measures how much noise is added during ordinary operation, is the ratio between the signal-to-noise ratio at the input and the signal-to-noise ratio at the output. Decibels are used to express power gain and noise figures.

Power dissipation, a factor in overall power consumption, is measured in watts (W) or milliwatts (mW). Output power, common-source forward Trans conductance,  operating frequency, and maximum drain saturation are additional performance standards for MOSFET RF transistors.

Some bipolar MOSFET RF transistors are appropriate for commercial, general industrial, or automotive applications. Others satisfy American military standards (MIL-SPEC).

MOSFET RF transistors come in various sizes, packages, and packing styles. Depletion mode devices can change channel counts by applying the proper gate voltage. On the other hand, devices that run in enhancement mode can only increase their channels by a suitable gate voltage. MOSFET RF transistors come in a variety of packaging options, including flat packaging, small outline transistor (SOT),  transistor outline (TO),  small outline (SO), and small outline (SO) (FPAK).

The number of leads varies between devices and can be surface mount technology (SMT) or through hole technology (SMT). MOSFET RF transistors can be packaged using tape reels, railways, bulk packs, tubes, and trays.

What Is RF and Why Do We Use It?

Wires come to mind first when we think of electricity. Wires are the primary method of moving electrical energy from one place to another, whether used in high-voltage transmission lines or small traces on a printed circuit board.

But history has repeatedly shown that people are rarely satisfied with the fundamental way of doing things. So we shouldn’t be surprised to learn that the widespread use of electricity was followed by attempts to free electrical functionality from the limitations of physical interconnections.

Integrating “wireless” capabilities into an electrical system in several ways is possible. One of these is RF communication, based on electromagnetic radiation. It’s crucial to understand that electromagnetic radiation is not the only substance capable of extending electrical circuitry into the wireless domain. It is possible to use (perhaps rudimentary) methods of transforming electrical energy into information that does not rely on conductive linkages, such as mechanical motion, heat,  and sound waves.


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