F4-75R12MS4

F4-75R12MS4

Part Number: F4-75R12MS4

Manufacturer: Infineon Technologies

Description: IGBT Modules N-CH 1.2KV 100A

Shipped from: Shenzhen/HK Warehouse

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F4-75R12MS4 Description

IGBT Modules IGBT 1200V 75A is available in the form of the F4-75R12MS4 product. This model has High Short Circuit Capability and Self-Limiting Short Circuit Current capabilities.

It has an isolated base plate in addition to a high power density. Applications that need switching at high frequencies are its most common usage.

In modern electronics, thyristors are the component that is utilized the most, and logic circuits are employed to use them for switching and amplification. BJT and MOSFET transistors are the most popular, and each has advantages and cons. The IGBT, or Insulated Gate Bipolar Transistor, is a single transistor that combines the most advantageous characteristics of the BJT and the MOSFET. It takes the input characteristics of MOSFETs (Insulated Gate), which are high input impedance, and combines them with the output characteristics of BJTs (Bipolar nature).

Typical Applications

  • High Frequency Switching Application

Electrical Features

  • High Short Circuit Capability, Self-Limiting Short Circuit Current
  • Low Switching Losses
  • VCEsat with a positive Temperature Coefficient
  • Mechanical Features
  • High Power Density
  • Isolated Base Plate
  • Standard Housing

What is an IGBT power module?

The BJT and MOSFET have been combined to create the IGBT, which stands for insulated gate bipolar transistor. Additionally, the name alludes to the combination of the two. A MOSFET’s input section with an extremely high input impedance is called an “Insulated Gate.” It operates based on the voltage that is present at its gate terminal rather than drawing any input current at all. The term “bipolar” alludes to the fact that the output of the BJT has a bipolar nature, which means that both types of charge carriers cause the flow of current. This enables it to manage extremely high voltages and currents despite only receiving low-voltage signals. The IGBT is a voltage-controlled device thanks to its hybrid arrangement of components.

It is a PNPN device that consists of four layers and has three PN connections. Gate (G), Collector (C), and Emitter are the three terminals that it possesses (E). The name of the terminal gives the impression that it is drawn from both transistors. While the collector and emitter are taken from the BJT since they are the output components, the gate terminal is taken from the MOSFET because it is the input component.

Construction of IGBT

The PNPN structure of an IGBT is formed by the IGBT’s four layers of semiconductor material. The collector (C) electrode is connected to the P layer, and the emitter (E) electrode is connected in the gap between the P and N layers. When building an IGBT, a P+ substrate is required for construction. To create the PN junction J1, an N-layer is placed on top of it. For the formation of the PN junction J2, two P regions are manufactured on top of the N-layer. The P area is organized so that the gate (G) electrode will have a route to follow through the middle.

Equivalent Structure of IGBT

Since we now know that an IGBT is the combination of a MOSFET’s input and a BJT’s output, we can deduce that its structure is analogous to that of an N-channel MOSFET and a PNP BJT configured in a Darlington arrangement. Additionally, the resistance of the drift zone can be integrated into the model.

Working of IGBT

Although the gate (G) is utilized for regulation, the IGBT’s collector (C) and emitter (E) terminals are responsible for current conduction. For it to function, a bias must be applied between the Gate-Emitter and Collector-Emitter terminals.

The collector has held at a higher voltage than the emitter thanks to the collector-emitter connection to Vcc. j1 is biased in the forward direction, while j2 is skewed in the opposite direction. There is currently 0V at the gate. IGBT stays off, and no current flows between the collector and emitter because of reverse j2.

By applying a higher gate voltage than the emitter, capacitance causes negative charges to build below the SiO2 layer. When the VG goes above the threshold voltage, a layer of charges is formed in the higher P-region. When this layer is present, it shorts out the N– drift zone and the N+ region via an N– channel.

In an emitter, electrons travel from the N+ region to the N- drift zone. In comparison, holes are injected from the collector’s P+ area into the N- drift zone. When there are more holes than electrons in a location, the conductivity of the region increases, and current flows. The IGBT, therefore, turns ON.

Types of IGBT

There are two distinct varieties of IGBT, distinguished by the presence or absence of an N+ buffer layer. They are classified as either symmetrical or asymmetrical IGBT depending on whether or not this additional layer is present.

● Punch through IGBT

Since the Punch through IGBT has an N+ buffer layer, it is sometimes called asymmetrical IGBT. Since their breakdown voltages are different in the forward and backward directions, they can block voltages differently. The breakdown voltage in the opposite direction is lower than in the forward direction. The changeover speed is quicker.

Because of their unidirectional nature, punch-through IGBTs cannot deal with reverse voltages. DC circuits, such as those in inverters and chopper circuits, require them.

What is an IGBT inverter?

With the help of an inverter, energy can be transferred from a power supply to a load. There are two main applications for the inverter, both of which involve power conversion:

  • Power-to-power

Transmission, distribution, and storage of electricity. A solar inverter is an example of a device that converts DC (direct current) from solar panels to AC (alternating current) for use in the electrical grid.

  • Power-to-motion

The process of transforming electrical energy into a form more suitable for driving mechanical systems, such as electric motors. A vehicle powered entirely by electric motors would fit this description. Here, the DC from the electric vehicle’s battery is changed into AC by the central inverter, powering the vehicle’s propulsion system.

IGBTs, FETs, MOSFETs, SJ MOSFETs, SiC MOSFETs, and GaN HEMTs are just a few of the power semiconductors that could make up the inverter.

When switching high voltages and large amounts of power, an IGBT inverter is the way to go.

Conclusion

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