Part Number: FDMS8680

Manufacturer: onsemi

Description: MOSFET N-CH 30V 14A/35A 8PQFN

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Technical Specifications of FDMS8680

Datasheet  FDMS8680 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Fairchild Semiconductor
Series PowerTrench?
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1590pF @ 15V
Power – Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PQFN (5×6), Power56

FDMS8680 Description

Texas Instruments FDMS8680 N-Channel PowerTrench® MOSFET is a high-performance device that minimizes power conversion applications’ losses. It is part of Texas Instruments’ PowerTrench family of MOSFETs. The component incorporates an innovative mix of silicon and packaging technologies, which enables it to achieve a low rDS(on) value of 7.0m when operated at VGS = 10V and ID = 14A, all while maintaining good switching performance. Additionally contributing to its dependability is the MSL1’s sturdy packaging design.

Product Description

This MOSFET can be used for various tasks, such as the low-side switching in synchronous buck converters, the secondary side synchronous rectifiers, the low-side switch in POL DC/DC converters, and even as a load switch or ORing FET. These are just some of the tasks that this MOSFET can perform. The FDMS8680 is able to manage a wide variety of working situations because to its maximum drain-to-source voltage of 30V and its maximum continuous drain current of 35A.

The thermal characteristics of the device are also noteworthy, with a junction-to-case thermal resistance of 2.5 °C/W and a junction-to-ambient thermal resistance of 50 °C/W. These values are smaller than the average thermal resistances in electronic components. Because of this, efficient thermal management is ensured, which stops thermal degradation and lengthens the device’s lifespan. Additionally, the item complies with RoHS standards, thus it is kind to the environment.

The FDMS8680 features a gate-to-source leakage current that is less than 100 nA, resulting in a reduced amount of power. Additionally, the device has a quick turn-on time ranging from 9 to 18 ns, which makes it particularly well-suited for high-frequency applications. Because of its low input capacitance ranging from 1195 to 1590 pF and low output capacitance ranging from 555 to 740 pF, the FDMS8680 is an excellent option for power conversion applications that need switching that is both quick and efficient.

In conclusion, the FDMS8680 N-Channel PowerTrench® MOSFET manufactured by Texas Instruments is a device that is both extremely efficient and reliable, making it appropriate for a wide variety of applications involving power conversion. Because of its low rDS(on) value, sturdy package design, and fast switching capabilities, it is a perfect solution for designers who want to improve the performance of their power conversion systems while minimizing losses.

FDMS8680 Features Description

A high-performance power switch developed specifically for power conversion applications is the FDMS8680 N-Channel PowerTrench® MOSFET. It can handle up to 35A of drain current in continuous mode (14A at 25°C) and 30V drain-to-source voltage (VDS). With a maximum of 7.0 m at VGS = 10V and ID = 14A, and 11.0 m at VGS = 4.5V and ID = 11.5A, the FDMS8680 has a low on-resistance (rDS(on)).

This MOSFET is constructed using cutting-edge silicon and packaging processes, allowing it to provide great efficiency without sacrificing switching performance. The FDMS8680’s rugged MSL1 construction makes it a great choice in extreme conditions. This gadget is also RoHS compliant as a product that aims to be both ecologically friendly and devoid of harmful substances.

The FDMS8680 can be used as a low-side switch in POL DC/DC converters, an ORing FET/load switch MOSFET, a secondary-side synchronous rectifier, a low-side switch for synchronous buck powering core processors, and so on. The FDMS8680 can easily manage heavy energy loads with its single pulse avalanche energy of 216 mJ.

The junction-to-case thermal resistance of the FDMS8680 is only 2.5°C/W, while the junction-to-ambient thermal resistance is 50°C/W. It’s perfect for power conversion applications due to its low power consumption and high maximum power dissipation (50W at 25°C and 2.5W at 25°C, respectively). You can get the FDMS8680 in an 8PQFN packaging, and it comes on 13″ reels with a 12mm tape width and in quantities of up to 3000.

Capacitance values for the input, output, and reverse transfer of the FDMS8680 range from 1195 to 1590 pF, 557 to 740 pF, and 95 to 145 pF, respectively. Using a temperature coefficient of 24 mV/°C, the drain-to-source breakdown voltage (BVDSS) is specified at 30V. The device has a gate-to-source leakage current of less than 100 nA and a threshold voltage of 1.0-3.0V. The FDMS8680 has a rapid 9-18 ns turn-on delay time, a rise time of 3-10 ns, and a turn-off delay time of 21-34 ns.

What is MOSFET N-CH 30V 14A/35A 8PQFN

The metal oxide semiconductor field effect transistor (MOSFET) N-CH 30V 14A/35A 8PQFN is a type of semiconductor used as a switch in electronic circuits. N-CH indicates that the device is able to manage negative charges because the “N” speaks for the polarity of the device, which is N-Channel. The designation “30V” in the product’s name implies that the MOSFET’s operating voltage range is up to 30 volts from drain to source.

Maximum drain currents of 14A (when the device runs at a defined temperature) and 35A (when the device operates at its rated temperature) are indicated by the 14A and 35A values, respectively (when the device is in a pulsed state). The “8PQFN” in the product’s name indicates a surface-mount package with eight pins in a quad-flat configuration and no leads.

This MOSFET kind finds widespread use as low-side switches in power-over-line DC/DC converters, secondary-side synchronous rectifiers, and ORing FET/load switches, among many other places. These MOSFETs have low on-state resistance (rDS(on)) and great switching performance; they were made specifically to reduce power conversion losses. They are safe for the environment because of their sturdy packaging and conformity with the RoHS directive on restricting the use of certain hazardous materials.

The electrical parameters of the MOSFET N-CH 30V 14A/35A 8PQFN include a threshold voltage of 1.0-3.0 volts and a static drain-to-source on resistance of 5.5-11.0 milliOhms, both of which vary with gate-to-source voltage and drain current. Additionally, the input capacitance of the device ranges from 1195-1590 pF, and the forward transconductance is 72 Siemens. Between 18 and 26 nC of gate charge are needed to switch on the device; however, this varies widely with gate voltage and drain current. This device utilizes a drain-source diode with forward voltage characteristics of 0.8–1.2 volts and a reverse recovery time of 27–44 ns.

The N-CH 30V 14A/35A 8PQFN MOSFET, in general, is a high-performance power MOSFET that can be used in various power conversion settings. Its excellent efficiency and low on-state resistance make it a practical and trustworthy choice for power management in a wide range of electronic devices.


In conclusion, the FDMS8680 N-Channel PowerTrench MOSFET is an excellent choice for power conversion applications that demand low losses and high efficiency. This device combines the latest advancements in silicon and package technologies to offer some of the best RDS (on) values in the market while maintaining excellent switching performance. The product is rated for a maximum drain current of 35A and has a maximum drain to source voltage of 30V. It is also RoHS compliant and comes in an MSL1 robust package design.

ICRFQ is a fantastic option for anyone seeking to purchase the FDMS8680 due to its established track record of supplying quality products and superior customer service. Whether you are designing a new power conversion system or improving an old one, the FDMS8680 is a dependable product.

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