FQA36P15 MOSFET

Technical Specifications of FQA36P15

Datasheet	FQA36P15 datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	Fairchild Semiconductor
Series	QFET?
Packaging	Tube
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	150V
Current – Continuous Drain (Id) @ 25°C	36A (Tc)
Rds On (Max) @ Id, Vgs	90 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	105nC @ 10V
Input Capacitance (Ciss) @ Vds	3320pF @ 25V
Power – Max	294W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

The FQA36P15 is a P-channel QFET® enhancement mode that operates at a voltage of -150V. Planar stripe and DMOS technologies are utilized in the manufacturing of power MOSFETs. This cutting-edge MOSFET technology has been fine-tuned to provide further switching performance, lower on-state resistance, and a high avalanche energy strength. It has also been specifically customized to reduce on-state resistance. This component can be utilized in various applications, including switched-mode power supply, audio amplifiers, DC motor controls, and variable switching power. This is a product that may be used for a variety of purposes and has a broad range of applicability.

FQA36P15 Applications

• Low gate charge
• 100% avalanche tested
• 175°C rated junction temperature

Frequently Asked Questions

The ON Semiconductor FQA36P15 is the topic of the Frequently Asked Questions (FAQ) presented here.

What is FQA36P15?

The planar stripe and DMOS technologies were used to create the FQA36P15 family of P-channel power MOSFETs. These MOSFETs are a member of the FQA36P15 family.

What kind of technology is FQA36P15 based on?

Planar stripe and DMOS technologies were used in the creation of this product.

What applications can FQA36P15 are used for?

The FQA36P15 is an excellent choice for various switching power applications, including switched-mode power supply, audio amplifiers, DC motor control, and more.

What is a MOSFET?

Insulated-gate field-effect transistors have their conductivity set by the applied voltage. A metal-oxide-semiconductor field-effect transistor is the name for this particular transistor design (MOS-FET, MOSFET, or MOS FET). Signal amplification and signal switching are two other uses. A material’s ability to change its conductivity in response to an applied voltage can be used to boost or switch electronic signals.

MOSFETs have surpassed BJTs, or bipolar junction transistors, as the most prevalent type of transistor used in digital and analog circuitry.

The MOSFET’s Gate is made up of the silicon dioxide used. Its function is to provide isolation by stopping the flow of charges directly from the gate to the conducting channel. This is accomplished by using it.

The metal oxide semiconductor field effect transistor, or MOSFET, is the most common type of transistor used in digital circuits. A memory chip or CPU could have hundreds of thousands or millions of MOSFETs.

In CMOS logic, complementary pairs of MOS transistors can be utilized to construct switching circuits that have a very low power consumption. This is made possible by the fact that MOS transistors can be fabricated using either p-type or n-type semiconductors. This is a possibility due to the fact that MOS transistors can be created using either p-type or n-type semiconductors throughout the manufacturing process.

What Is Planar Transmission Line?

Planar transmission lines contain conductors, or dielectric (insulating) strips flattened into a ribbon shape. Components on microwave-frequency printed circuits and integrated circuits are typically connected using planar type connectors since they are compatible with the fabrication processes for these devices. Transmission lines are not merely connectors; they also provide other functions. When the interconnections between the wires are simple, the electromagnetic wave can propagate along the wire fast enough to be called instantaneous. The voltages at both ends of the wire can be considered the same.

These assumptions no longer hold water if the length of the wire exceeds a significant portion of a wavelength (a tenth of a wavelength is a common rule of thumb); in this case, transmission line theory should be utilized instead. When it comes to transmission lines, the geometry of the line is accurately controlled (in most cases, the cross-section is maintained constant along the length), which enables the electrical behavior of the line to be highly predictable. When thinking about the cables that connect the various pieces of equipment, these concerns are only relevant at lower frequencies. However, at microwave frequencies, the distance at which transmission line theory becomes important is on the order of millimeters. At lower frequencies, these considerations are not required at all. As a result, transmission lines are essential components of circuits.

What does P-channel mean?

One variety of MOSFET is referred to as a P-Channel MOSFET, and it is distinguished from other MOSFETs by the fact that the channel of the MOSFET is made up of holes as current carriers for the most part. The vast bulk of the current flowing is comprised of holes going through the channels when the MOSFET is turned on and active.

What is an Enhancement-Type MOSFET?

Enhancement-type MOSFETS are semiconductor devices that are normally in the off state. When an enhancement-type MOSFET is connected, there is no current flow between the drain and the source when there is no voltage applied to the gate of the device. Because of this, it is typically referred to as being “off-device.” Without the application of a gate voltage, there will be no flow of current.

However, the drain-source channel’s resistance drops when a voltage is provided to the MOSFET’s gate lead. To a maximum, the drain-to-source current increases as the gate-source voltage rises.

As the gate voltage rises, the current rises as well, making an enhancement-type MOSFET a type of enhancement device.

In operation, an enhancement-type MOSFET is quite similar to a bipolar junction transistor.

In contrast, depletion-type MOSFETs act in an unintended way. Most modern devices use depletion mode field effect transistors. In the absence of a voltage supplied to the gate lead, they are capable of carrying the maximum possible current. When the gate-source voltage of a depletion-type MOSFET is raised, the drain-source channel of the transistor becomes more resistant, resulting in a smaller drain-source current. Current flow is terminated if the gate-source voltage reaches the cutoff level.

Conclusion

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