IRFZ48N Power MOSFET

Technical Specifications of IRFZ48NL

Datasheet	IRFZ48NL datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	55V
Current – Continuous Drain (Id) @ 25°C	64A (Tc)
Rds On (Max) @ Id, Vgs	14 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	81nC @ 10V
Input Capacitance (Ciss) @ Vds	1970pF @ 25V
Power – Max	3.8W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	TO-262

The IRFZ48N transistor usage, equivalent, features, and other essential information on this TO-220 packaged power MOSFET device will be discussed in depth. However, what exactly is this TO-220?

What is TO-220?

Electronic components with a pin spacing of 0.1 inches (2.54 mm), like the TO-220, are often high-powered through-hole devices. TRANSISTOR OUTLINE denotes a “TO” designation. Each of the three leads of a TO-220 package must be attached. The same kind of packages can also be made with two, four, five, or seven leads. The component may dissipate more heat than one built in a TO-92 casing thanks to a metal tab with a hole mounting the case to a heatsink. Silicon-controlled rectifiers, Transistors, and integrated circuits are only some common discrete semiconductors in TO-220 packages.

The TO-220 package is an example of a through-hole design instead of a surface-mount technology package, and it is a “power package” suited for power semiconductors. Several watts of excess heat can be dissipated by mounting a TO-220 package onto a heat sink. On an “infinite heat sink,” this can be as much as 50 W. The box is made with a metal tab with a heat sink hole in it. Between the package and heatsink, the thermal compound increases heat transfer.

Often, the metal prong will have an electrical connection to the internal workings. However, if the heatsink is grounded or electrically conducting, an electrically insulating pad or sheet may be needed to prevent the component from being damaged. The TO-220 package can be electrically isolated using various materials, some of which also have excellent thermal conductivity.

Dislodging the heatsink during operation poses a risk of harm or destruction to the TO-220 device in applications where one is needed.

A heat sinked TO-220 package dissipating 1 W of heat will have a junction temperature of 2 to 5 °C higher than the package’s temperature. This is because there is a significant temperature difference between the connection and the metal tab, which causes this. Furthermore, depending on the heatsink (if any) utilized, the metal tab’s temperature will be anywhere from 1 to 60 °C hotter than the surrounding air.

While the case-to-ambient thermal resistance is more critical, the junction-to-case thermal resistance of a TO-220 packed device can vary from 0.5 °C/W to 3 °C/W or 1.5 °C/W to 4 °C/W

Devices housed in the equally common TO-247 (or TO-3P) container might be opted for if more excellent heat dissipation is required. The junction-to-ambient (heatsink) thermal resistance of a TO-3P is typically only approximately 40 °C/W, and the TO-3PF variation has an even lower resistance. As more powerful modules become available, heat dissipation can be improved.

Without an external heatsink, a TO-220 package can function as a heatsink in its own right; its heatsink-to-ambient thermal resistance in the air is about 70 °C/W.

Device description

5th -generation HEXFETs made by International Rectifier use cutting-edge manufacturing methods to deliver unprecedented low on-resistance per silicon unit. Combining this feature with the high switching speed and ruggedized device architecture for which HEXFET Power MOSFETs are known, the designer is presented with a device that is both efficient and reliable across a wide range of applications.

Surface mount power package D2Pak supports die sizes up to HEX-4. It has the lowest on-resistance of any surface mount package currently available and the highest power capabilities. The D2Pak’s low internal connection resistance makes it ideal for high current applications, and it can dissipate up to 2.0W in a standard surface mount configuration.

IRFZ48 Key Features

• It features Advanced Process Technology
• It has Ultra Low On-Resistance
• It has a Dynamic dv/dt Rating
• It has a 175°C Operating Temperature
• Features Fast Switching
• It has Fully Avalanche Rated

IRFZ48N MOSFET Explained

Fifth-generation HEXFETs from International Rectifier use cutting-edge manufacturing methods to deliver unprecedented low on-resistance for every silicon unit. Combining this feature with the high ruggedized device and switching speed architecture for which HEXFET Power MOSFETs are known, the designer is presented with a device that is both efficient and reliable across a wide range of applications.

Surface mount power package D2Pak supports die sizes up to HEX-4. It has the lowest resistance of any surface mount package currently available and the highest power capabilities. The D2Pak’s low internal connection resistance makes it ideal for high current applications, and it can dissipate up to 2.0W in a standard surface mount configuration.

Where and How to Use

The IRFZ48N transistor is designed for flexibility, making it suitable for a wide range of general-purpose uses. It performs exceptionally well in switching power supplies, uninterruptible power systems (UPS), and systems requiring high voltage electrostatic discharge (ESD) protection. Besides that, it can be used to amplify sound.

How to Long Run a Circuit Safely

When constructing a circuit or using it in a circuit, the long-life performance of a component is another highly essential issue to consider. Because of this, I suggest avoiding using a feature at its highest ratings, which reduces its life and performance over time.

My standard recommendation is always to use it at a level below its maximum rating or at least 20 percent lower. The same rules apply to the IRFZ48N MOSFET: the maximum continuous drain current is 64A, so do not drive loads of more than 51A; the maximum drain-to-source voltage is 55V, so do not drive loads of more than 44V; use a suitable heatsink in conjunction whenever using or storing this device, be sure that the temperature is always between -55 and +175 degrees Celsius.

IRFZ48N Benefits

● Greater toughness

● Wide range of distribution options Industry-recognized qualification

● Superior efficiency in low-frequency applications

● The use of standard Pinout enables drop-in replacement.

● High current capacity

IRFZ48N Replacement and Equivalent

RFP70N06, IRFZ44A, IRF1010,   IRLZ44N, NDP7061, SUP70N06-14, BUK7514-55 , SMP50N06-25,  BUK9514-55 , BUZ100S, BUZ100SL, MTP52N06VL, MTP55N06Z, NDP7061, STP53N06,  MTP52N06V, RFP70N06, SMP60N06-18, BUZ110SL, SUP70N06-14.

Conclusion

The IR MOSFET family of power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including SMPS, battery-powered devices, lighting, DC motors, inverters, load switches, and illumination. For ease of design, the devices come in a choice of surface mount and through-hole packaging with standardized industry footprints. We hope this article has provided some background information about the device. If you have any further questions, please post them in the comment sections below, and we’ll try our best to respond to them all.

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