Part Number: PSMN1R0-30YLC

Manufacturer: Nexperia

Description: MOSFET PSMN1R0-30YLC/SOT669/LFPAK

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of PSMN1R0-30YLC,115

Datasheet  PSMN1R0-30YLC,115 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer NXP Semiconductors
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 1.15 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Gate Charge (Qg) @ Vgs 103.5nC @ 10V
Input Capacitance (Ciss) @ Vds 6645pF @ 15V
Power – Max 272W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK
Supplier Device Package LFPAK, Power-SO8

PSMN1R0-30YLC Description

The Next Power Super junction technology is used in the MOSFET device known as the PSMN1R0-30YLC, an N-channel enhancement-mode logic level MOSFET. It is calibrated for a 4.5V gate drive. It is designed and tested for use in various DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supply, sync rectifier, and domestic equipment applications.

PSMN1R0-30YLC Features and Benefits

Power Supply in a Highly Reliable SO8 Package, Rated To 175 degrees Celsius

  • Designed specifically for 4.5V Gate drive with Next Power Super junction optimization.
  • System efficiency is maximized at both low and heavy loads by the ultra-low QG, QGD, and QOSS.
  • Exceptionally small parasitic inductance and Rdson.

PSMN1R0-30YLC Applications

  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier

Basics of N-Channel MOSFET, Working and Characteristics

N-Channel The metal oxide semiconductor field-effect transistor, sometimes known as a MOSFET, is a type of device that falls under the heading of field-effect transistors (FET). The capacitor is essential to the operation of the MOSFET transistor. A field-effect transistor with an insulated gate is another name for this type of transistor (IGFET). There are additional occasions when it is referred to as a metal-insulator field-effect transistor (MIFET). The p-type and n-type categories are subcategories of this particular type of transistor. These enhancements and depletion-based MOSFETs are a subcategory of the p-type and n-type MOSFETs. This classification is determined by whether the channel was formed in the past or whether the operation was induced because of an already-existing channel. The source, drain, and gate are the names of the three terminals included in this type of transistor. MOSFETs depend on these terminals to perform their intended functions.

What is N-Channel MOSFET?

The MOSFET was constructed in which the conduction was caused by the channel of electrons, which were the bulk of the charge carriers. When this MOSFET is turned on, the ON condition causes the largest amount of current to flow through the device. This situation results in the maximum amount of current flow. The N-channel MOSFET is the name given to this particular variety of MOSFET.

Enhancement-mode MOSFET

The more prevalent type of MOSFET is an enhancement-mode device, just as its name suggests; the depletion-mode device, on the other hand, is the complete opposite of the enhancement-mode device. In this scenario, the normally conductive channel is only lightly doped or left undoped, transforming it into an insulator. The device is considered in its “OFF” (non-conducting) state when the gate bias voltage, VGS, equals zero. The channel line has been broken in the circuit diagram for an improved MOS transistor shown above. This represents a non-conducting channel, which is commonly an open channel.

The n-channel enhancement MOS transistor is a transconductance device, which means that the drain current will only flow when the gate voltage (VGS) supplied to the gate terminal is greater than the threshold voltage (VTH), which is the voltage at which conductance will begin to occur.

The enhanced channel thickness of an n-type MOSFET is caused by the attraction of additional electrons toward the oxide layer surrounding the gate when the device is subjected to a positive (+ve) gate voltage. This is where the term “enhanced” comes from. Because the gate voltage amplifies the channel, this particular variety of transistors is referred to as an enhancement mode device.

The decrease in channel resistance that results from increasing the positive gate voltage also increases the channel’s capacity to carry the drain current, denoted by ID. To restate this, applying positive VGS to an n-channel enhancement mode MOSFET causes the transistor to conduct, whereas using zero or negative VGS has the reverse effect. The enhancement-mode MOSFET can be considered comparable to a switch with its generally open position.

The flow direction is reversed in the case of a p-channel enhancement MOS transistor. When VGS equals 0, the device is in the “OFF” position, and the channel is not being used. The p-type MOSFET requires the application of a negative (-ve) gate voltage to be turned “ON.” This action raises the channel conductivity. Similarly, applying +VGS to a p-channel enhancement mode MOSFET will turn it “OFF,” while using -VGS will turn it “ON.”

Depletion and Enhancement Modes

Two primary modes of transistors are utilized in field-effect transistors, which are known as the depletion mode and the enhancement mode (FETs). When the voltage between the gate and the source is equal to zero, the transistor can be in one of two states: an on-state or an off-state, which correspond to these modes.

Enhancement-mode metal–oxide–semiconductor field effect transistors are used in most integrated circuits’ switching elements. MOSFET is an acronym for metal–oxide–semiconductor field effect transistor. These devices are turned off when the voltage between the gate and the source is equal to zero. Simply increasing the gate voltage to a level greater than the source voltage will allow you to activate an NMOS transistor. To start a PMOS transistor, on the other hand, you must pull the gate voltage down so that it is lower than the source voltage. This suggests that in most circuits, an enhancement-mode MOSFET may be turned on by bringing its gate voltage closer to its drain voltage. This can be done by moving the gate voltage closer to the drain voltage.

Because the voltage between the gate and the source in a depletion-mode MOSFET is constantly at zero, the device is in a normal state in which it is always on. These components are called load “resistors” and are utilized in logic circuits (in depletion-load NMOS logic, for example). Likely, the threshold voltage for N-type depletion-load devices is somewhere around -3 V. If this is the case, then it is possible to turn it off by pushing the gate voltage 3 V in the direction of a negative value (the drain, by comparison, is more positive than the source in NMOS). In PMOS, the polarities are inverted from what they would normally be.

Enhancement-mode devices for an N-type FET have positive thresholds, while depletion-mode devices have negative points. On the other hand, enhancement-mode devices for a P-type FET have negative thresholds, while depletion-mode devices have positive thresholds. The sign of the threshold voltage, which is the gate voltage about the source voltage at the point where an inversion layer is about to form in the channel, can be used to identify the mode. This voltage is measured at the point where an inversion layer is forming.


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