RD16HHF1 IC CHIP Silicon MOSFET Power Transistor

When Mitsubishi stopped manufacturing widely used radio RF output transistors like the 2SC2166, 2SC1969, and 2SC2312, contrary to the widespread notion, they did not create a gap in the market for replacement components. The substandard power supply switching transistors, such as the 13N10, was in no way a constraint for makers of radios; in reality, this was far from the case. Mitsubishi developed an entirely new generation of linear RF MOSFETs to replace them successfully. The RD06HHF1 was an excellent choice for replacing the MOSFETs in the driver stages, and the RD16HHF1 would have been a perfect choice for the final step, either as a single or dual stage.

Examine the dissipation ratings for the RD16HHF1 and the 2SC2312 in their datasheets, even though the RD16HHF1 only produces 16 watts and the 2SC2312 17 watts.

With its available dissipation of 56.8 watts, the RD16HHF1 has more than twice the capacity of its predecessor. If in the future your tech suggests replacing a final with a new MOSFET, make sure to ask for the RD16HHF1 model. The first company to market a dual-final radio of adequate quality that incorporates these components will be the first to offer a product that is desirable to purchase.

What is RD16HHF1

The RD16HHF1 is a MOS FET type transistor developed expressly for applications involving HF RF power amplifiers.

Application

for use in the output stage of high-power amplifiers seen in HF band mobile radio sets.

Device Caution

High Temperature

It is essential to be aware that this product may generate heat while in use, and you risk getting burned if you touch the running product immediately or wait to touch it until it has cooled down after the power has been turned off. Do not place any flammable materials, especially ones that have the potential to start a fire, near the product.

Generation of High-Frequency Power

This item is capable of producing power at a high frequency. Please note that you should not leak unnecessary electromagnetic waves and that you should operate these items in a manner that does not cause damage to human beings or property following a regular operation.

Before use

Before you begin using the product, it is imperative to build the apparatus, taking into account any potential dangers to humans and any electromagnetic wave obstructions that may exist for the device.

Cautionary Measures Before Using Mitsubishi Silicon RF Power Devices

• The mentioned specifications in this data sheet do not constitute guaranteed values for the described values. The formal specification sheet should be consulted to verify further operational specifics about these products. Please get in touch with one of our sales offices so that we may provide you with copies of the official specification sheets.
• The RA series RF power amplifier modules and the RD series RF power transistors are designed for integration into consumer mobile communication devices. In instance, while these goods have a high degree of reliability for their intended use, they are not produced using a quality assurance testing process extensive enough to guarantee the level of reliability commonly viewed as necessary for important communications parts. Furthermore, in the application, which includes base station applications and fixed station applications that operate with long-term continuous transmission and a higher on-off frequency while transmitting, please see the following: c. please c. please c. please c. please c., please see the following
• The MOSFET semiconductor technology is implemented in items in the RD series. They are sensitive to ESD voltage; hence suitable ESD precautions must be taken before using them.
• If the device is used at a frequency lower than what is suggested, there is a risk that the RF swing will surpass the breakdown voltage, which could result in the device being damaged or destroyed.
• Keeping the device’s temperature as low as possible is preferable to achieve the apparatus’s highest possible level of dependability. To maintain a channel temperature for RD series goods below 120deg/C (in case Tchmax=150deg/C),140deg/C (in case Tchmax=175deg/C), it is advised to use a heat-sink of adequate size in conjunction with additional cooling measures as needed (fan, etc.). This is because the channel temperature can rise above 175deg/C when other cooling methods are not used.
• Under these conditions, the gadget should not be used as it has already been pushed above its maximum capacity. In the case of devices made of plastic that have been molded, exceeding the maximum rating might cause the molding resin to blow out, smolder, or catch fire due to the concise current flow between the drain and the source of the device. These actions lead to potentially dangerous consequences like a fire or an injury.
• Please refer to the additional items within the specifications sheet to obtain information regarding the special safety precautions to assemble these products into the apparatus.
• If the product’s protective cap (lid) is removed or if the product is modified in any way from its original form, the warranty on the product will no longer be valid.
• Please refer to the last page of this data sheet for additional information regarding “Safety first” precautions that should be taken when designing your circuit and notes about the materials.
• Please refrain from using the product in conditions that expose it to caustic gas,salt, dust, or other potentially harmful elements. This includes where water or organic solvents could come into contact with the product directly. There is a likelihood that the device’s reliability will significantly decline, and there is also a risk of breakdowns, which could lead to a significant accident. Similarly, a severe accident can be triggered if it is utilized in a setting that contains flammable or explosive gases. Please ensure that your drawings incorporate an appropriate amount of margin for error.

Conclusion

Contrary to popular belief, Mitsubishi discontinued the production of radio RF output transistors such as the 2SC1969, 2SC2166, and 2SC2312, there was no shortage of alternatives. In truth, manufacturers of radios were not limited in any way by using 13N10s and other low-quality switching transistors in their power supplies. Mitsubishi created a new generation of linear RF MOSFETs to replace them effectively. To replace MOSFETs in the driver stages, the RD06HHF1 was a great pick, and the RD16HHF1, in either a single or dual stage configuration, would have been an ideal choice for the final stage.

If you are planning to purchase RD16HHF1 ICs in bulk, contact us at ICRFQ, and we will supply you with the best quality. We are the best electronic component distributor in China.

The Latest And Most Popular Parts That You May Also Like