Part Number: S25FL128SAGBHIA00

Manufacturer: Infineon Technologies

Description: IC FLASH 128MBIT SPI/QUAD 24BGA

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of S25FL128SAGBHIA00

Datasheet  S25FL128SAGBHIA00 datasheet
Category Integrated Circuits (ICs)
Family Memory
Manufacturer Cypress Semiconductor Corp
Series FL-S
Packaging Tray
Part Status Active
Format – Memory FLASH
Memory Type FLASH – NOR
Memory Size 128M (16M x 8)
Speed 133MHz
Interface SPI Serial
Voltage – Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 24-TBGA
Supplier Device Package 24-BGA (6×8)

S25FL128SAGBHIA00 General Description

These are the parts that make up the Infineon S25FL128S and S25FL256S flash non-volatile memory products:

  • Two data bits are stored in each memory array transistor using the MIRRORBITTM technology.
  • The Eclipse architecture significantly enhances the performance of programs and erasers.
  • Process lithography at 65 nm.

The SPI interface connects this group of devices to a host computer. Optional two-bit (Dual I/O) and four-bit (Quad I/O) serial commands, in addition to the standard single-bit (Single I/O) serial input and output (SPI), are also supported. SPI Multi-I/O, or MIO, refers to this multiple-width interface. In addition, the FL-S family now allows for address and read data to be transferred on both edges of the clock with DDR read commands for SIO, DIO, and QIO.

Due to the Page Programming Buffer implemented in the Eclipse design, it is possible to program 128 words (256 bytes) or 256 words (512 bytes) in a single operation, which is more efficient than the programming and erasing algorithms used in the previous generation of SPI chips. The term “eXecute-in-Place,” or XIP, is commonly used to run code directly from flash memory. Instruction read transfer rates can be as fast as or faster than conventional parallel interface asynchronous NOR flash memories when FL-S devices are used at their maximum supported clock rates in conjunction with QIO or DDR-QIO commands. A wide range of embedded applications can take advantage of the S25FL128S and S25FL256S’s high density, flexibility, and fast performance. They work wonderfully for data storage, XIP, and code shadowing.

● Known differences from prior generations

Disclosure of errors Earlier generations of FL memories either lacked error status bits or did not set them if an attempt was made to program or erase data from a protected sector. The FL-S chip family includes error-reporting status bits for both the program and erase operations. These can be set when an attempt is made to program or erase a protected sector or when an internal error occurs during the programming or erasing process. The command did not complete the programming or erasing operation in both cases.

● Secure silicon region (OTP)

Comparatively, the OTP area is smaller and has a different layout (address map) than earlier iterations. Each part of the OTP area requires a unique strategy for its protection.

● Configuration Register Freeze bit

Similar to previous generations, the Configuration Register Freeze bit, also known as CR1[0, locks the state of the block protection bits. Additionally, it protects the FL-S family’s secure silicon region (OTP) area as well as the configuration register’s TBPARM bit CR1[2], TBPROT bit CR1[5, and TBPARM bit CR1[2] states.

● Deep power down

On the other hand, devices that are part of the FL-S family cannot use the deep power down (DPD) feature. Older SPI memory controllers still capable of sending the previous DPD command can now access the new bank address register by using the legacy DPD (B9h) command code. The bank address register allows SPI memory controllers not supporting more than 24 bits of the address to provide higher-order address bits for commands. This provides access to the larger address space that the 256 Mb density FL-S device offers.

● Multiple inputs and outputs can be sent and received over a serial connection (SPI-MIO)

Since many memory modules communicate with their host computer in parallel, address, and data signals. This necessitates many signal connections, resulting in a larger package size. The greater the number of connections, the higher the power consumption because of the increased number of signal switches and the higher the cost because of the larger package size.

The S25FL128S and S25FL256S devices serially transfer all control, address, and data information between four and six signals, thereby reducing the number of signals required to connect to the host system. This reduces the memory package’s cost, signal switching power, and host connections, releasing them for other features. The S25FL128S and S25FL256S devices support optional extension commands for two-bit (Dual) and four-bit (Quad) wide serial transfers. These devices use the standard single-bit Serial Peripheral Interface. SPI Multi-I/O, also called SPI-MIO, is the name given to this multiple-width interface.

● Address and data configuration

The host only transmits data to the memory using the SI signal, and it uses the standard SPI command format, which is a single bit wide (Single or SIO). The Serial Output (SO) signal can send information in a serial format back to the host. The SI signal always transfers host data to memory when the Dual or Quad Output command is carried out.

IO0 and IO1 will send nibbles of four bits (nibbles) on IO0, IO1, IO2, and IO3, depending on the data sent back to the host. These nibbles can be either bit pairs or single bits. Data is sent from the host to the memory in pairs or four-bit nibbles when transferred via IO0, IO1, IO2, and IO3. On inputs IO0 and IO1, data is communicated back to the host in the form of bit pairs. On inputs IO1, IO2, and IO3, data is communicated back to the host in groups of four bits (nibbles).

● Active power and standby power modes

When Chip Select (CS#) is in the LOW state, the device’s power supply is engaged and operating normally. When CS# is HIGH, the device is incapable of programming, erasing, or writing data; however, the device can continue operating in Active Power mode. After that, it enters a mode known as standby, in which its overall power consumption is cut down to ISB levels.


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