Part Number: SI2301CDS-T1-GE3

Manufacturer: Vishay Semiconductors

Description: MOSFET -20V Vds 8V Vgs SOT-23

Shipped from: Shenzhen/HK Warehouse

Stock Available: Check with us

Technical Specifications of SI2301CDS-T1-GE3

Datasheet  SI2301CDS-T1-GE3 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Vishay Siliconix
Series TrenchFET?
Packaging Tape & Reel (TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current – Continuous Drain (Id) @ 25°C 3.1A (Tc)
Rds On (Max) @ Id, Vgs 112 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds 405pF @ 10V
Power – Max 1.6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)

Are you looking for a component that can serve multiple purposes within your circuit, including amplifying signals and switching between them? Vishay’s power MOSFET model SI2301CDS-T1-GE3 is the one to turn to solve the problem. It can dissipate a maximum of 860 milliwatts of power. This item will be packaged on a tape and reel for shipment so that it can be mounted efficiently and sent without damage. This MOSFET transistor has an enhancement mode of operation and uses a P channel.

The MOSFET transistor has an operational temperature range from -55 degrees Celsius to 150 degrees Celsius. This gadget makes use of a technique known as TrenchFET.

SI2301CDS-T1-GE3 Features

  • Halogen-free based on the definition in IEC 61249-2-21.
  • Power MOSFET TrenchFET®.
  • RoHS Directive 2002/95/EC-compliant.

What is a Power MOSFET?

The term “Power MOSFET” refers to a specific variety of MOSFET capable of managing large quantities of power. The switching speed of these MOSFETs is much faster than that of regular MOSFETs operating in lower voltage ranges, which allows them to function far more effectively. It works in the same way standard MOSFETs do regarding their working principle.

The power MOSFETs utilized most frequently are:

  • The p-channel enhancement mode.
  • The n-channel enhancement mode.
  • The n-channel depletion mode.
  • The p-channel depletion mode.

The frequency of the power MOSFET can reach up to 100 kilohertz at its highest point.

The Basic Idea Behind It

Altering the voltage on the gate terminal causes these variants of MOSFETs to switch and regulate the flow of current between two terminals, such as source and drain, in a manner that is analogous to that of conventional MOSFETs. After the voltage has been applied to the gate terminal, a channel will form between the source terminal and the gate terminal, allowing current to flow through the device.

The channel will get superior, and the ID (drain current) will grow if the VGS voltage, which stands for gate-source, is increased.

Specifications and Quality Assurance Measures

When choosing power MOSFET-based devices, two of the most important considerations to make are the gate-source cutoff voltage (also known as VGS(Off)) and the drain saturation current (also known as IDSS). Both of these conditions are satisfied by the voltages and currents. The IDSS indication indicates that the drain current has reached its saturation point, also called the drain current. When VDS equals VGS, the measurement is taken (denoted by VGS).

When the drain current reaches its maximum amount, the MOSFET waits for the drain-source voltage to increase before continuing its operation. The depletion layer at the drain of the gate terminals is resilient enough to withstand the increased voltage. Thus, drain current saturation (IDSS) occurs when the current reaches its maximum amount.

The voltage at the gate source that produces an insignificant drain current value is referred to as the gate-source cutoff voltage, abbreviated as VGS(Off). There is also a possibility that you will hear it referred to as the VGS voltage. Numerous companies and organizations, both large and small, carry out stringent quality assurance testing on the specifications that are utilized in the production of power MOSFETs.

MOSFET Construction for Power Applications

In most cases, enhancement types of MOSFETs are used in power electronics. A drift layer is applied to raise the maximum voltage rating of an enhancement MOSFET. The power MOSFET is constructed as a vertical shape with four layers. The primary purpose of this kind of structure is to lessen the area traversed by the flow of current. Therefore, the on-state resistance and on-state loss will be reduced thanks to this structure.

The drift zone is the n-layer, and the body is the p-type layer of a MOSFET. Compared to other layers, such as the source and the drain, the doping in this layer is mild. The behavior of this drift area will determine the MOSFET’s breakdown voltage. When constructing a power MOSFET, the n+ layers make up the device’s first and last layers. In this case, the source layer serves as the primary layer, while the drain layer acts as the final layer.

The enhancement mode of the n channel MOSFET is represented by the structure of n+ p n- n+. On the other hand, the structure of a p-channel MOSFET includes a doping shape that is quite the opposite. As a result of the presence of an oxide layer that functions as a dielectric layer in this structure, the gate terminal is not connected directly to the p-type semiconductor. Instead, there is a layer of oxide that sits in between the metal and the semiconductor.

On the input of the MOSFET, it creates a high capacitance, say above 1000 pF, due to the metal oxide semiconductor it makes. The oxide layer offers the silicon dioxide layer to separate the terminal from the body and the gate. As a result, the oxide layer possesses good insulating qualities.

Power MOSFET Traits and Qualities to Look For

The following table illustrates the VI properties of a power MOSFET. Here, the characteristic curve is constructed between the voltage at the drain relative to the source and the drain current, which is indicated with the notation VDS & Id. This curve consists of three regions: the cutoff zone, the ohmic region, and the saturation region.

When used as a switch, the MOSFET works in ohmic zones and cuts off when switched ON/OFF. In the saturation region, it is possible to avoid the procedure to reduce the power loss while the operational condition is in effect.

The power MOSFET will enter the cutoff area when the gate-source voltage falls below the threshold voltage. This occurs when the threshold voltage is lower than the gate-source voltage. The drain-to-source breakdown voltage must be higher than the circuit voltage to prevent a breakdown. As a result, an avalanche breakdown will take place.

When the power MOSFET enters the ohmic state, the amount of power lost by dissipation drops to an extremely low level. In saturation, the drain current is virtually unaffected by source voltage.

It is entirely dependent on the voltage that is present between the gate terminals and the source terminals. Compared to the voltage at the threshold, the voltage at the gate terminal is significantly higher. The drain current will rise when there is a more significant voltage difference between the gate and the source.


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