Part Number: SI2307CDS-T1-GE3

Manufacturer: Vishay Siliconix

Description: MOSFET P-CH 30V 3.5A SOT23-3

Shipped from: Shenzhen/HK Warehouse

Stock Available: Check with us

Technical Specifications of SI2307CDS-T1-GE3

Datasheet  SI2307CDS-T1-GE3 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Vishay Siliconix
Series TrenchFET?
Packaging Tape & Reel (TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 3.5A (Tc)
Rds On (Max) @ Id, Vgs 88 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 6.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 340pF @ 15V
Power – Max 1.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)

SI2307CDS-T1-GE3 Description

The SI2307CDS-T1-GE3 is a TrenchFET® Power MOSFET that operates at a voltage of -30V and on the P channel. Appropriate for usage in load switches designed for portable electronic equipment. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuits and small-signal packages that have been adapted to provide the heat transfer capabilities required by power devices. These characteristics are necessary for power devices.


Surface-mounted LITTLE FOOT power MOSFETs take advantage of the integrated circuit and small-signal packages adapted to offer the heat transfer characteristics necessary by power devices. These MOSFETs are referred to as “surface-mounted” devices. Modifications have been made to the leadframe materials and design, moulding compounds, and die to attach materials, but the footprint of the packages has remained the same.

The electrical connections for the SOT-23 are uncomplicated and easy to understand. The gate is connected to pin 1, the source is connected to pin 2, and the drain is connected to pin 3. The LITTLE FOOT package’s drain pin serves a dual purpose as the component’s thermal connection to the printed circuit board (PCB). This is the case for all LITTLE FOOT packages. The total cross-section of a copper trace linked to the drain may be suitable for carrying the current necessary for the application. Still, it is also possible that it is inadequate in terms of its thermal properties.

In addition, heat travels outward from the source of the heat in a circular pattern. When looking at the heat distribution around the PC board, the drain pin appears to be the heat source in this particular instance. The footprint of the SOT-23 package and the copper spreading are displayed in Figure 1. This layout illustrates the starting point for maximizing the use of the board area that is available for the heat-spreading copper. This pattern is formed by placing a piece of copper over the drain pin. This plane of copper provides planar copper, which draws heat from the drain lead and begins distributing the heat so it can be dispersed into the ambient air. This pattern uses the entirety of the space accessible underneath the body for the intended purpose.

As a result of the compact nature of surface-mounted packages and the prevalence of reflow soldering as the method of choice for affixing them to the printed circuit board (PC board), “thermal” connections from the planar copper to the pads have not been implemented. Even if the greater planar copper area is employed, this change shouldn’t affect the soldering procedure. The perforations in the solder mask serve to define the solder connections. The solder mask’s production is accomplished automatically by combining the total footprint with the copper plane on the drain pins.

The breadth of the power traces is the last thing you need to keep in mind, so keep an eye out for it. The quantity of current that a power trace needs to carry should be used to establish the breadth of the power trace at its bare minimum. This minimum width should be at least 0.020 inches to function correctly from a thermal perspective. By using wide traces connected to the drain plane, one can create a channel with a low impedance for heat to travel away from the device.

Product Technical Specifications

EU RoHS Compliant
Part Status Active
HTS 8541.29.00.95
Automotive No
Product Category Power MOSFET
Configuration Single
Process Technology TrenchFET
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Operating Junction Temperature (°C) -55 to 150
The Maximum Continuous Drain Current (A) is 2.7
The Maximum Gate Source Leakage Current (nA) is 100
Maximum IDSS (uA) 1
The Maximum Drain Source Resistance (mOhm) is 88@10V
The Typical Gate Charge @ Vgs (nC) is [email protected]
The Typical Gate to Drain Charge (nC) is 1.8
The Typical Gate to Source Charge (nC) is 1.3
The Typical Reverse Recovery Charge (nC) is 11
Typical Input Capacitance @ Vds (pF) 340@15V
Typical Reverse Transfer Capacitance @ Vds (pF) 51@15V
Minimum Gate Threshold Voltage (V) 1
Typical Output Capacitance (pF) 67
Maximum Power Dissipation (mW) 1100
Typical Fall Time (ns) 17
Typical Rise Time (ns) 40
Typical Turn-Off Delay Time (ns) 20
Typical Turn-On Delay Time (ns) 40
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W) 1.1
Maximum Pulsed Drain Current @ TC=25°C (A) 12
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 166
Typical Diode Forward Voltage (V) 0.8
Typical Gate Plateau Voltage (V) 3.2
Typical Reverse Recovery Time (ns) 17
Maximum Diode Forward Voltage (V) 1.2
Maximum Positive Gate Source Voltage (V) 20
Maximum Continuous Drain Current on PCB @ TC=25°C (A) 2.7
Mounting Surface Mount
Package Height 1.02(Max)
Package Width 1.4(Max)
Package Length 3.04(Max)
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-23
Pin Count 3
Lead Shape Gull-wing


Vishay’s SI2307CDS-T1-GE3 power MOSFET can be used to construct a highly efficient common drain amplifier. The largest amount of power it can dissipate is 1100 mW. This product will be encased in tape and reel packaging while it is being shipped to ensure that it is delivered undamaged and to make component attachment as quick and easy as possible. TrenchFET technology was utilized in the construction of this gadget. This MOSFET transistor has an enhancement mode of operation and uses the P channel.

This MOSFET transistor can operate from -55 degrees Celsius to 150 degrees Celsius. The minimum operating temperature is -55 degrees Celsius.

If you need information or want to order SI2307CDS-T1-GE3, contact us here at ICRFQ, your leading electronic component supplier in China, and we will ensure you get the best product at the best price.

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