STP80NF55-06 MOSFET

Technical Specifications of STP80NF55-06

Datasheet	STP80NF55-06 datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	STMicroelectronics
Series	STripFET? II
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	55V
Current – Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	189nC @ 10V
Input Capacitance (Ciss) @ Vds	4400pF @ 25V
Power – Max	300W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

STP80NF55-06 Description

The “Single Feature SizeTM” strip-based technique that STMicroelectronics uses has been updated most recently with the development of this Power MOSFET. The resulting transistor has a very high packing density for low resistance, rigid avalanche properties, and alignment stages that aren’t as important, all of which lead to excellent repeatability in manufacturing.As a consequence, the resulting transistor has an extremely high packing density, which in turn leads to low on-state resistance.As a result, the transistor that is made has a very high packing density, which makes the on-state resistance low.  It also has rigid avalanche properties and fewer essential alignment steps. Appropriate for use when changing applications.

All features

• Outstanding DV/dt capabilities.
• Characterization focused on application.
• 100 per cent avalanche-tested.
• Changing applications.

Description of the Product’s Technical Features

Frequently asked questions

● What exactly is a power MOSFET, you ask?

The term “Power MOSFET” refers to a specific variety of MOSFET capable of managing large quantities of power. The switching speed of these MOSFETs is much faster than that of regular MOSFETs operating in lower voltage ranges, which allows them to function far more effectively. It works in the same way standard MOSFETs do regarding their working principle.

The power MOSFETs utilised most frequently are the p-channel enhancement mode, the n-channel enhancement mode, the n-channel depletion mode, and the p-channel depletion mode. The frequency of the power MOSFET can reach up to 100 kilohertz at its highest point.

● The underlying concept behind operations

Altering the voltage on the gate terminal causes these variants of MOSFETs to switch and regulate the flow of current between two terminals, such as the source and drain, in a manner that is analogous to that of conventional MOSFEAfter the voltage is put on the gate terminal, a channel will form between the source terminal and the gate terminal, allowing current to flow through the device.

The channel will get better, and the ID (drain current) will grow if the VGS voltage, which stands for gate-source, is increased.

● Specifications and Quality Assurance Measures

When choosing goods based on power MOSFET, we need to consider two essential parameters: VGS(Off), also known as gate-source cutoff voltage, and IDSS, also known as drain saturation current. Both of these criteria are voltages and currents. The drain saturation current can be described as a drain current saturation measurement, which is marked with the symbol IDSS. This measurement takes place after the drain-source voltage is equal to the voltage of the gate-source, symbolically represented by the VGS.

After the drain current of the MOSFET has reached its maximum value, the device waits to see if there is an increase in the drain-source voltage. A depletion layer can accommodate this additional voltage at the drain end of the gate terminals. Therefore, this condition is referred to as drain current saturation (IDSS), which means the current has reached its maximum value.

The gate-source cutoff voltage, also known as VGS(Off), refers to the gate-source voltage value that produces a drain current value relatively close to zero. The standards utilized in making power MOSFETs are put through various tests conducted by multiple groups and societies. The primary examples are the JEDEC JESD 24, the BS IEC 60747-8-4, and the JEDEC JEP 115.

● Power MOSFET Qualities and Characteristics

The following table presents a power MOSFET’s VI properties for your perusal. Here, the characteristic curve is constructed between the drain-to-source voltage and the drain current, which are indicated respectively as VDS and Id in the equation. The cutoff zone, the ohmic region, and the saturation region are all included in this curve.

When used as a switch, the MOSFET will work within ohmic and cut off when switched ON/OFF. It is possible to avoid the process entirely within the saturation area to reduce the amount of power lost within the active state.

Once the gate-source voltage drops below the threshold voltage, the power MOSFET enters its cutoff zone. The breakdown voltage between the drain and the source must be higher than the voltage applied for there to be no chance of a breakdown occurring. This will result in the avalanche breaking up.

When the power MOSFET enters the ohmic state, this region’s power dissipation level drops significantly. When in the saturation state, the drain current is roughly independent of the voltage applied from the drain to the source.

It merely depends on the voltage between the gate and source terminals, with the voltage of the gate terminal being higher than the threshold voltage. The drain current will go up when the voltage between the gate and the source is raised.

Final Thoughts

STMicroelectronics made the STP80NF55-06 power MOSFET, amplifying electronic impulses and letting you switch between lines. It can dissipate up to 300,000 mW of power at once. This product is sold in tubes to protect its parts from damage that could come from being packed in bulk. This MOSFET transistor can function between -55 degrees Celsius and 175 degrees Celsius. Striped ii technology was used to construct this gadget. This N-channel metal-oxide-semiconductor field-effect transistor functions in the enhancement mode.

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