AP9997GH MOSFET

AP9997GH-HF Introduction

The AP9997GH-HF MOSFET is a powerful semiconductor device used a lot in electronic circuits to manage power, switch between circuits, and boost power. It is a type of N-channel MOSFET that gives power electronics high performance, efficiency, and reliability. This article will tell you everything you need to know about the AP9997GH-HF MOSFET, including its features, specs, uses, and benefits.

AP9997GH-HF Description

Advanced Power MOSFETs from APEC offer the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Most commercial and industrial surface mount applications use the TO-252 package, which is good for low-voltage applications like DC/DC converters. For low-profile applications, you can use the through-hole version (AP9997GJ).

AP9997GH-HF Features

APEC’s Advanced Power MOSFETs are made to work well and be reliable in power electronics applications. One of the most important things about these MOSFETs is that they can switch on and off quickly, which makes them good for high-frequency uses like switch-mode power supplies. This fast switching speed also reduces switching losses, making power electronics circuits more efficient.

Another thing about these MOSFETs is that they are built to be strong and reliable even in harsh operating conditions. This is important for applications where the MOSFETs are subjected to high temperatures, voltage spikes, and other stresses. MOSFETs are made to handle high levels of electrical and thermal stress, ensuring they will work and be reliable for a long time.

Another great thing about these MOSFETs is that they have low on-resistance. This low on-resistance keeps power losses to a minimum, making the device more efficient and reducing the amount of heat it makes. This is especially important in high-power applications, where keeping power losses as low as possible is crucial to the system’s overall performance.

APEC’s Advanced Power MOSFETs are also affordable, which makes them a great choice for designers who need high-performance parts at a reasonable price. This is made possible by advanced manufacturing processes and design optimizations that lower the overall cost of the MOSFETs while keeping their performance and reliability at high levels.

Package TO-252:

Most commercial and industrial surface mount applications use the TO-252 package, which is good for low-voltage applications like DC/DC converters. The TO-252 package has good thermal performance and quickly removes heat, making power electronics circuits more reliable. The package is made to be small and easy to use, which makes it a great choice for designers who need high-performance MOSFETs that are easy to add to their designs.

Through-Hole Version: The through-hole version of the Advanced Power MOSFETs (AP9997GJ) can be used for low-profile applications. This version of MOSFETs is made to be small and low-profile, so it can be used in places without much room. Even though the through-hole version of MOSFETs is smaller than the surface-mount version, it has the same high performance and reliability.

Specifications.

Drain-Source Voltage (VDS): This is the highest voltage that can be connected to the MOSFET’s drain and source terminals. The maximum VDS for the AP9997GH-HF MOSFET is 60V. The MOSFET could be hurt or stop working right if this voltage is exceeded.

Gate-Source Voltage (VGS): This is the highest voltage that can be connected to the MOSFET’s gate and source terminals. The maximum VGS for the AP9997GH-HF MOSFET is about 20V. The MOSFET could be hurt or stop working right if this voltage is exceeded.

Continuous Drain Current (ID): This is the most current that can always flow through the MOSFET’s drain terminal. The maximum ID for the AP9997GH-HF MOSFET is 12A. If this current is exceeded, the MOSFET could get too hot, get damaged, or stopped working right.

Power Dissipation (PD): This is the most power the MOSFET can lose before the junction temperature exceeds its maximum value. The maximum PD for the AP9997GH-HF MOSFET is 2.5W. If this power dissipation is exceeded, the MOSFET could get too hot, break, or stop working.

Drain-Source On-Resistance (RDS(ON)): This is the resistance between the MOSFET’s drain and source terminals when fully turned on. The ON resistance of the AP9997GH-HF MOSFET is 15m. Low on-resistance reduces power losses and makes power electronics circuits more efficient.

Input Capacitance (Ciss): This is how much space there is between the MOSFET’s gate and source terminals. For the AP9997GH-HF MOSFET, the value of the Ciss is 1100pF. This capacitance affects how fast the MOSFET can turn on and off and how much gate drive current is needed to turn the MOSFET on and off.

Output Capacitance (Coss): This is how much space there is between the MOSFET’s drain and source terminals when the gate is at 0V. Coss is 220pF in the case of the AP9997GH-HF MOSFET. This capacitance slows down the speed at which the MOSFET switches on and off and can cause voltage spikes in the circuit.

Reverse Transfer Capacitance (Crss): The space between the MOSFET’s gate and drains terminals when the source voltage is 0V. The AP9997GH-HF MOSFET has a Crss value of 190pF. This capacitance slows down the speed at which the MOSFET switches on and off and can cause voltage spikes in the circuit.

Total Gate Charge (Qg): This is the sum of all the charges needed to turn the MOSFET on or off. For the AP9997GH-HF MOSFET, the value of Qg is 25nC. This charge changes how fast the MOSFET can switch and how much gate drive current is needed to switch the MOSFET.

Threshold Voltage (VGS(th)): This is the voltage at which the MOSFET starts to work. In the AP9997GH Benefits case,

The AP9997GH-HF MOSFET has a number of great features that make it a great choice for power electronics. It uses less power because it has a low resistance when it is on. This makes it more efficient and makes less heat. The fast switching speed of the MOSFET means that switching losses are kept to a minimum. This makes power electronics circuits even more efficient. Because the gate threshold voltage is low, the MOSFET is easy to drive, which makes it easier to make power electronics circuits.

Also, the TO-252 package of the AP9997GH-HF MOSFET has good thermal performance and gets rid of heat quickly, which makes power electronics circuits more reliable. The MOSFET also has a high avalanche energy rating, which makes it strong and reliable in harsh operating conditions. The AP9997GH-HF MOSFET is a great choice for power electronics applications because it has high performance, efficiency, and reliability.

Conclusion

In conclusion, the AP9997GH-HF MOSFET is an exceptional semiconductor device with high performance, efficiency, and reliability in power electronics applications. Its low on-state resistance, fast switching speed, and low gate threshold voltage make it an excellent choice for power management, switching, and amplification. The MOSFET offers several advantages, such as improved efficiency, reduced heat generation, and enhanced reliability, making it an ideal choice for power electronics designers. If you are designing power electronics circuits and require a high-performance MOSFET, the AP9997GH-HF MOSFET is an excellent option for your application.

At ICRFQ, we offer a wide range of electronic parts, including the AP9997GH-HF, and our team of experts is always available to assist with any questions or orders. We strive to provide exceptional service and quality electronic components to our customers, ensuring their satisfaction. Whether you need assistance selecting the right parts or placing an order, we are here to help you start your next project. You can rely on us as your one-stop shop for electronic parts and components because we prioritize quality and customer satisfaction. So, contact us today and let us help you with your electronic part needs.

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