Part Number: BSS138LT3G

Manufacturer: onsemi

Description: MOSFET N-CH 50V 200MA SOT23-3

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of BSS138LT3G

Datasheet  BSS138LT3G datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer ON Semiconductor
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 50V
Current – Continuous Drain (Id) @ 25°C 200mA (Ta)
Rds On (Max) @ Id, Vgs 3.5 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) @ Vgs
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power – Max 225mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)

BSS138LT3G Introduction

The BSS138LT3G is an N-channel MOSFET that can be used for a number of different electronic tasks. This full guide has everything you need to know about the BSS138LT3G, including its specs, features, and suggested ways to use it. By the end of this piece, readers will know exactly what this surface-mount MOSFET can do and how it might help them.

Introduction to the BSS138LT3G MOSFET

A wide range of electronic applications are supported by the N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) BSS138LT3G. This adaptable component is ideal for contemporary circuit designs that need effective power management and space-saving techniques since it provides high performance in a small surface-mount package.

Intended Applications

For applications where low voltage, moderate current, and a small form factor are essential, the BSS138LT3G MOSFET was created specifically. Its widespread applications include:

  • Power Switching: The BSS138LT3G can be used in a variety of electronic systems as a power switch. Its quick switching capabilities and low on-resistance allow for effective power flow management.
  • Motor Control: The BSS138LT3G is appropriate for motor control applications because of its voltage and current ratings, where it can precisely handle modest current levels.
  • The MOSFET is the best device for signal amplification jobs in audio circuits and other signal processing applications because of its amplification capabilities.
  • Level Shifting: The BSS138LT3G may act as a level shifter thanks to its low threshold voltage, enabling flawless interface compatibility between devices running at various voltage levels.

Surface-Mount Design and SOT-23-3 Package

The surface-mount SOT-23-3 (TO-236) package for the BSS138LT3G has benefits for space efficiency and ease of assembly. The SOT-23-3 package’s tiny size makes it ideal for compact, densely populated circuit boards, where space is at a premium.

Through-hole installation is not necessary with this surface-mount design, allowing for effective automated assembly procedures in high-volume manufacturing. The BSS138LT3G is a perfect option for applications that require surface-mount technology and downsizing due to its small package size and surface-mount functionality.

In conclusion, the BSS138LT3G MOSFET is made to work with a variety of electronic applications where low voltage, moderate current, and space-saving solutions are crucial. It is better suited for use in contemporary circuit designs thanks to its surface-mount construction and small SOT-23-3 packaging, which also allows for reliable performance in a variety of electronic systems.

Circuit Design Considerations for BSS138LT3G

When designing a circuit with the BSS138LT3G MOSFET, consider the following guidelines:

Gate Drive Requirements

  • Provide sufficient gate voltage above the threshold voltage for proper operation.
  • Size gate driver components to ensure fast and efficient switching.

Voltage Level Translation

  • Ensure input and output voltage levels are compatible.
  • Use voltage dividers or level shifters for accurate voltage translation.

Thermal Management

  • Prevent overheating by staying within the maximum power dissipation rating.
  • Consider using a heat sink and optimize the PCB layout for efficient heat dissipation.

Current Limiting and Protection

  • Use external current-limiting measures to protect against excessive current.
  • Implement short circuit protection to prevent damage.

Noise Considerations

  • Utilize appropriate decoupling and grounding methods to reduce noise and voltage fluctuations.

You can use the BSS138LT3G in your circuit design with the best performance and reliability by taking into account these factors. Do not forget to validate and test the design under various operational scenarios.

Key Specifications of the BSS138LT3G

A number of significant features contribute to the BSS138LT3G MOSFET’s outstanding performance and adaptability. These are its main characteristics:

  • The BSS138LT3G is capable of handling a wide range of voltage levels in a variety of applications thanks to its 50V maximum voltage rating.
  • Continuous Current Capability: The BSS138LT3G is suited for a variety of electronic circuits because of its continuous current rating of 200mA (milliamperes), which enables it to dependably handle moderate current loads.

The BSS138LT3G’s power dissipation rating, which measures how much power it can absorb without overheating, is 225mW (milliwatts). Even in difficult circumstances, this specification guarantees reliable functioning.

Features and Benefits of the BSS138LT3G MOSFET

The BSS138LT3G MOSFET has a number of noteworthy features that improve its performance and provide a number of advantages for electronic systems. These qualities consist of:

  • Low Threshold Voltage: The MOSFET has a low threshold voltage, which allows for quick on/off switching with little input voltage. This function helps to minimize power losses and achieve effective power management.
  • Low On-Resistance: The BSS138LT3G has a low on-resistance, allowing it to conduct current while still maintaining a low voltage drop. Reduced power dissipation and increased overall efficiency in power applications are the results of this attribute.
  • Fast Switching Features: The MOSFET exhibits fast switching rates, allowing for quick response times when switching between the on and off states. Applications that need for swift switching and fine control benefit from this functionality.

The combination of these features provides the following benefits

  • Effective Power Management: The low threshold voltage and on-resistance help to effectively utilize power, reducing wastage and increasing system effectiveness.
  • Reduced Power Losses: Because the MOSFET has a low on-resistance, there are fewer voltage drops, which reduce power losses and raise the system’s overall energy efficiency.
  • Fast and Responsive Operation: The MOSFET is well suited for applications that call for quick and accurate switching because to the fast switching characteristics that enable quick reaction times.

Application Examples of the BSS138LT3G

The BSS138LT3G MOSFET is used in a variety of electronic systems and circuits. Here are a few particular instances:

  • Switches for power: The BSS138LT3G effectively controls the flow of power in devices like battery-operated systems when used as a power switch.
  • Motor Control: The MOSFET is suited for motor control applications due to its voltage and current ratings, which allow for accurate control of motor speed and direction.
  • Amplification of weak signals: The BSS138LT3G may boost weak signals in audio circuits or other signal processing applications, ensuring precise and dependable signal transmission.
  • Level Shifting: The MOSFET is particularly suited for level shifting applications due to its low threshold voltage, which enables flawless interface compatibility between devices operating at various voltage levels.

The properties of the BSS138LT3G, such as low on-resistance, quick switching, and low threshold voltage, lead to effective operation and improved performance in each of these applications.

Designers may achieve effective power management, decreased power losses, and dependable performance in a variety of electronic applications by utilizing the features and advantages of the BSS138LT3G MOSFET.


In conclusion, the BSS138LT3G MOSFET stands out as a reliable and efficient component for a wide range of electronic applications. Its robust specifications, compact package, and efficient performance make it an excellent choice for designers looking to optimize power management, reduce power losses, and achieve reliable operation in their circuits. By leveraging the capabilities of the BSS138LT3G, designers can embark on successful electronic projects with confidence.

Don’t miss out on the opportunity to leverage the capabilities of the BSS138LT3G for efficient and reliable electronic designs. Contact ICRFQ  today to obtain this MOSFET and unlock its potential in your electronic projects.

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