CSD25404Q3T

CSD25404Q3T

Part Number: CSD25404Q3T

Manufacturer: Texas Instruments

Description: MOSFET P-CH 20V 104A 8VSON

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CSD25404Q3T Description

Absolute Maximum Ratings

The P-Channel MOSFET transistor known as the CSD25404Q3T may be found in an 8-VSON (3.3×3.3) SMD (SMT) packaging and is manufactured by Texas Instruments. These features include a gate-source threshold value of 1.15 volts at a current of 250 amperes, a constant drain current of 104 amperes (Tc) at 25 degrees Celsius, and a breakdown voltage of 20 volts when measured from the drain to the source. -55 degrees Fahrenheit to 150 degrees Fahrenheit is the temperature range in which the CSD25404Q3T can perform (TJ).

This SON 3.3 mm packaging of a -20 V, 5.5 m NexFETTM power MOSFET offers exceptional thermal performance for its size, making it ideal for use in power conversion load control applications in which losses must be kept to a minimum.

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel – TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.15V @ 250μA
Max Gate Charge 14.1nC @ 4.5V
Max Input Capacitance 2120pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.8W (Ta), 96W (Tc)
Maximum Rds On at Id, Vgs 6.5 mOhm @ 10A, 4.5V
Temperature Range – Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (3.3×3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1030675-CSD25404Q3T
Popularity Medium
Fake Threat In the Open Market 28 pct.
Supply and Demand Status Balance

Frequently Asked Questions

● What is P Channel MOSFET?

P-channel MOSFETs are characterized by a channel formed primarily of holes rather than electrons. When this MOSFET is turned on, the channel will be filled with charge carriers like holes. In an N-channel MOSFET, electrons make up the vast bulk of charge carriers, which sets them apart from this device.

● MOSFET Enhancement P Channel

The design of this MOSFET makes use of an n-substrate that has only been weakly doped. The length serves as a dividing line between the two p-type materials that are highly doped (L). A channel’s length is denoted by the letter L.

A very thin silicon dioxide covering is applied to the foundational material. This layer is generally referred to as the “dielectric layer,” which is also its name. Each P type can be interpreted as the source or the drain.

The plated aluminum placed on top of the dielectric serves as the gate terminal. The body of the MOSFET and the power supply have a grounded connection.

A voltage in the negative range has been attached to the gate terminal. As a direct result of capacitance, the positive charge concentration is transferred to the dielectric layer beneath. The electrons at the n substrate migrate due to repulsive forces, which reveals the exposed value of the positive ions layer. It is only necessary for a small percentage of the electrons in an n-type substrate’s minority carrier holes to form a pair for a bond to be formed between the two.

On the other hand, the sustained application of the negative voltage results in the destruction of the covalent bonds, which in turn leads to the dissolution of the electron-hole pairs that were created. This structure is responsible for the generation of holes and increased concentration of hole-carrying carriers in the channel. When a negative voltage is applied to the drain terminal, the channel will begin conducting, resulting in current flowing through the transistor.

P Channel Depletion MOSFET

When contrasted with a MOSFET with n-channel depletion, a p-channel depletion MOSFET develops in another way. Because p-type impurities are already present, we can consider the channel to be operational in this scenario. When a negative voltage is applied to the terminal gate, free holes are attracted into the channel occupied by positive-type impurity ions. Free holes are a stand-in for the n-type minority carriers often found in semiconductors. This happens because when a drain terminal is reverse biased, the device starts conducting; however, the depletion layer only forms when the drain terminal’s negative voltage is increased further.

The characteristics of this region are established according to the depth of the layer produced by the positive ions. The magnitude of the depletion zone in the channel directly affects the channel’s conductivity. The local voltage can be adjusted to get the desired effect on the terminal current. The gate and drain are still at negative values, while the source is still at zero volts.

How Do You Use P-Channel Mosfet?

The following diagram illustrates the circuit for the motor control MOSFET switch. This switch circuit may direct the motor in either direction since it comprises two MOSFETs, one in both the P and N channels. These two MOSFETs are coupled together to provide a bi-directional switch. The bi-directional control is generated using a dual supply via the motor connected between the common drain and the GND reference.

When the voltage at the input is low, the MOSFET in the circuit that controls the motor turns in one direction (a P-channel MOSFET), while the N-channel MOSFET remains off (its gate-to-source junction is biased negatively). The engine is supplied with power via the +VDD supply in this particular instance.

Similarly, when the input is HIGH, the positive bias at the gate to source junction causes the N-channel MOSFET to turn ON, while the P-channel device switches OFF. P

This occurs because the N-channel MOSFET has a higher threshold than the P-channel device. The motor’s terminal voltage was reversed when fed via the -VDD supply rail; thus, it rotates in the opposite direction. This caused the motor’s rotation to change.

Conclusion

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