Part Number: CY62167EV30LL-45ZXI

Manufacturer: Infineon Technologies


Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of CY62167EV30LL-45ZXI

Datasheet  CY62167EV30LL-45ZXI datasheet
Category Integrated Circuits (ICs)
Family Memory
Manufacturer Cypress Semiconductor Corp
Series MoBL?
Packaging Tube
Part Status Active
Format – Memory RAM
Memory Type SRAM – Asynchronous
Memory Size 16M (2M x 8, 1M x 16)
Speed 45ns
Interface Parallel
Voltage – Supply 2.2 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 48-TFSOP (0.724″, 18.40mm Width)
Supplier Device Package 48-TSOP I


In the field of semiconductor devices, the CY62167EV30LL-45ZXI stands out as a high-performance CMOS static RAM with amazing features designed to fulfill the demands of diverse applications, particularly in the realm of portable electronics. This detailed tutorial will offer you with a deep dive into the CY62167EV30LL-45ZXI whether you’re a tech enthusiast, an electronics expert, or simply someone interested in understanding the inner workings of cutting-edge memory technology.


The CY62167EV30LL-45ZXI is a flexible static RAM chip with two basic memory configurations: 1,000,000 words by 16 bits and 2,000,000 words by 8 bits. Because of these configurations, it can be used in a variety of applications, ranging from smartphones and tablets to embedded systems and automotive electronics.

Power Efficiency

The CY62167EV30LL-45ZXI’s high power efficiency is one of its notable qualities. It features a sophisticated circuit that assures ultra-low active current, which is critical for improving battery life in portable devices such as cell phones. This means your device may run for longer periods of time on a single charge, delivering greater convenience and usability.

Automatic Power Down

The CY62167EV30LL-45ZXI includes an automatic power-down capability to further improve its power-saving capabilities. Power consumption is lowered by 99 percent when the gadget is not actively in use (deselected). When certain criteria are satisfied, such as CE1 being HIGH or CE2 being LOW, or both BHE and BLE being HIGH, this feature is activated. When deselected, the device enters standby mode, resulting in low power consumption during idle hours.\

Input and Output Control

The CY62167EV30LL-45ZXI’s input and output pins are precisely controlled. Under certain conditions, these pins (I/O0 through I/O15) can be placed in a high-impedance state:

  • When the device is deactivated (CE1 HIGH or CE2 LOW)
  • When outputs are turned off (OE HIGH)
  • When both Byte High Enable and Byte Low Enable are turned off (BHE, BLE HIGH)
  • While performing a write operation (CE2 HIGH,  CE1 LOW, and WE LOW),

When the device is not actively engaged, this level of control ensures data integrity and minimizes interference.

Read and Write Operations

It’s easy to read and write to the CY62167EV30LL-45ZXI. Setting the Chip Enables (CE2 HIGH  and CE1 LOW) and the Write Enable (WE) input to LOW will cause data to be written to the memory. Data from I/O pins (I/O0 through I/O7) or I/O pins (I/O8 through I/O15) will be written into the designated memory location based on address pins (A0 through A19), respectively, when Byte Low Enable (BLE) is in the enabled state.

Set Chip Enables (CE2 HIGH and CE1 LOW) and Output Enable (OE) to LOW and Write Enable (WE) too HIGH to read data from the device. Data from the memory location indicated by the address pins will be output on either I/O0 to I/O7 or I/O8 to I/O15, again depending on the state of Byte Low Enable (BLE).

Technical Specifications

  • Package Type:The CY62167EV30LL-45ZXI comes in a TSOP I package, which can be configured as 1M × 16 or 2M × 8 SRAM.
  • Speed:It offers very high-speed performance with a speed rating of 45 ns.
  • Temperature Range:It is designed to operate in a wide temperature range, making it suitable for automotive applications, with a range of -40°C to +85°C.
  • Voltage Range:The device operates within a voltage range of 2.20 V to 3.60 V.
  • Standby Power:In standby mode, it consumes minimal power, with a typical standby current of 1.5 μA and a maximum standby current of 12 μA.
  • Active Power:During active operation, it maintains an ultra-low active current, with a typical active current of 2.2 mA at a frequency of 1 MHz.

Memory Expansion and Configuration

The CY62167EV30LL-45ZXI has convenient memory expansion options including CE1, CE2, and OE. The system’s flexibility means that its memory management and consumption can be optimized for a wide range of configurations.

Maximum Ratings and Device Safety Guidelines

Maximum ratings and device safety requirements supplied by the manufacturer must be followed when dealing with the CY62167EV30LL-45ZXI. The device’s operation and lifespan may be jeopardized if this is not done. Here are some important maximum ratings and rules of thumb to remember:

Storage Temperature

  • Storage temperature:The device can be kept between -65 degrees Celsius and +150 degrees Celsius. Outside of this range, the gadget could be damaged or degraded beyond repair.

Ambient Temperature with Power Applied

  • Ambient temperature with power applied:When the gadget is active, make sure the temperature range is between -55 and +125 degrees Celsius. When used outside of this range, the gadget may malfunction or operate less well.

Supply Voltage and Ground Potential

  • Supply voltage to ground potential:No less than -0.3 V and no more than 3.9 V (VCC(max) + 0.3 V) must be applied to the device. The device’s internal components may be damaged if operated outside this voltage range.

DC Voltage Applied to Outputs in High Z State

  • DC voltage applied to outputs in High Z state:The output voltage should be kept between -0.3 V and 3.9 V (VCC(max) + 0.3 V). If the voltage or current is outside of this safe range, it could cause harmful electrical interactions.

DC Input Voltage

  • DC input voltage:Input pins of the device must receive a DC voltage between -0.3 V and 3.9 V (VCC(max) + 0.3 V). Exceeding this range may cause the device to malfunction or even break.

Output Current into Outputs (LOW)

  • Output current into outputs (LOW):When driven LOW, the device’s output current limit is 20 mA. If this threshold is exceeded, damage or unpredictable behavior may result.

Static Discharge Voltage

  • Static discharge voltage (MIL-STD-883, Method 3015):Static discharges of >2001 V are safe for the device. Electrostatic discharge (ESD) occurrences can cause significant damage to sensitive electronic components; while static discharges below this threshold may not harm the device, they should be avoided nonetheless.

Latch-up Current

  • Latch-up current:Latch-up currents greater than 200 mA are safe for the component. If the device experiences latch-up, it will enter a high-current state that should be avoided. It’s best to avoid anything that can cause the gadget to go into latch-up mode.

Adherence to the CY62167EV30LL-45ZXI’s maximum ratings and safety recommendations will guarantee its continued reliable and secure functioning. Please note that these instructions have not been tested by the user and should be followed precisely to avoid damaging the gadget and to assure its continued proper operation.


In summary, the CY62167EV30LL-45ZXI is a versatile CMOS static RAM chip that excels in performance, power efficiency, and memory flexibility. Whether you’re designing cutting-edge electronics or optimizing automotive systems, understanding this device is crucial.

Armed with this knowledge, you’re ready to leverage the power of the CY62167EV30LL-45ZXI for your specific needs. Whether it’s extending battery life or optimizing memory usage, this chip is a valuable asset in the semiconductor world.

To explore further or place an order for the CY62167EV30LL-45ZXI, reach out to ICRFQ, your trusted electronic component supplier. Contact us now to unlock the potential of this remarkable memory solution.

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