Part Number: DMN62D0U-13

Manufacturer: Diodes Incorporated

Description: MOSFET N-CH 60V 380MA SOT23

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of DMN62D0U-13

Datasheet  DMN62D0U-13 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Diodes Incorporated
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current – Continuous Drain (Id) @ 25°C 380mA (Ta)
Rds On (Max) @ Id, Vgs 2 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) @ Vgs 0.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 32pF @ 30V
Power – Max 380mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23

Introducing the Diodes Incorporated DMN62D0U-13 MOSFET, an N-channel MOSFET with an exceptional performance created for applications requiring high levels of power management efficiency. This MOSFET is a flexible and dependable alternative for various applications thanks to its low on-state resistance, quick switching speed, and wide operating temperature range. The MOSFET N-CH 60V 0.38A has a high breakdown voltage of 60V, and a low gate threshold voltage is a well-liked option for electronic circuits that need switching and amplification.

DMN62D0U-13 Description

This MOSFET is suited for high-efficiency power management applications since it is built to decrease the on-state resistance (RDS(ON)) while maintaining superior switching performance.

DMN62D0U-13 Detailed Description

Diodes Corporation is responsible for developing N-channel MOSFETs such as the DMN62D0U-13 MOSFET. Switching or amplifying signals is the primary function it serves in electrical circuits.

This MOSFET was designed to have a low on-state resistance (RDS(ON)) on purpose so that it could reduce the lost power and improve the efficiency of applications that dealt with power management. Because it has a continuous drain current rating of 0.38A and a maximum drain-source voltage value of 60V, it is suitable for use in applications requiring low to medium power.

The DMN62D0U-13 MOSFET has a gate-source voltage range of up to 20V and a gate-source threshold voltage of 1V at 250A. Both of these properties can be found in their electrical specifications. The input capacitance is 32 pF when the voltage is 30 V, and the gate charge is 0.5 nC when the voltage is 4.5 V. These properties help to contribute to its quick switching speed, which makes it ideal for use in applications involving power management in where dependability and efficiency are of the utmost importance.

The operation of a MOSFET that has been included in a circuit is controlled by applying a voltage to the terminal that serves as the gate. This results in producing an electric field, which controls the current flow between the source terminals and the drain terminals. When the gate voltage is high enough, the metal-oxide-semiconductor field-effect transistor (MOSFET) becomes active. It allows current to flow across the channel, going from the drain to the source. When the gate voltage is removed or dropped below a certain threshold, the MOSFET becomes inoperable and stops allowing current to flow through the channel. This happens when the threshold is reached.

The N-channel DMN62D0U-13 MOSFET has a drain-source breakdown voltage (Vds) of 60V, enabling it to resist high-voltage loads easily. This is because Vds measure the value at which the drain voltage equals the source voltage. It has a gate-source voltage (Vgs) of 4.5 volts, a drain current (Id) of 380 mA, and a low on-state resistance (RDS(ON)) of 2 ohms, in addition to having a continuous drain current (Id) of 380 mA and a drain current (Id) of 100 mA. The gate-source threshold voltage is 1V when the drain current is 250 A. This value is denoted as Vgs(th).

One of the most essential aspects of the DMN62D0U-13 MOSFET is its low gate charge (Qg) of 0.5 nC at a Vgs of 4.5V. This allows it to be driven easily while causing very little loss of power. In addition to this, its maximum Vgs, which is approximately 20V, allows it to sustain a broad spectrum of gate drive voltages.

The DMN62D0U-13 MOSFET is placed in a surface-mount package known as a SOT-23-3, a tiny design ideal for applications with restricted amounts of space. Because it can withstand temperatures ranging from -55 degrees Celsius to 150 degrees Celsius, it is ideally suited for use in challenging environments.

To summarize, the high-performance N-channel MOSFET DMN62D0U-13 was designed specifically for use in power management applications that require a high level of efficiency. Because of its low on-state resistance, low gate charge, and broad working temperature range, it is an adaptable and dependable solution that can be utilized for a wide range of applications.

DMN62D0U-13 Features and Benefits

  • On-Resistance is low.
  • Input capacitance is low.
  • Switching at a rapid pace.
  • Input/Output Leakage is minimal.
  • Up to 1kV ESD Protection.
  • Completely Lead-Free & Compliant with RoHS (Notes 1 & 2).
  • Free of halogens and antimony. “Green” Appliance (Note 3).
  • AEC-Q101 Specifications for High-Reliability Qualified

What is MOSFET N-CH 60V 0.38A

Metal oxide semiconductor field-effect transistors (MOSFETs) with an N-channel include MOSFET N-CH 60V 0.38A. It can handle a continuous drain current (Id) of up to 0.38 amps and a drain-to-source voltage (Vdss) of up to 60 volts.

A particular transistor called a MOSFET switches and amplified electronic signals. A source, gate, and drain terminal are all present on an N-channel MOSFET. A thin oxide layer separates the gate terminal from the source and drain terminals.

An electric field is produced when a voltage is supplied to the gate, controlling the current flow between the source and drain terminals. An N-channel MOSFET’s source and drain terminals are connected by a conductive channel formed when a positive voltage applied to the gate pulls electrons from the source terminal toward the oxide layer. The current can now move from the source to the drain as a result.

The MOSFET N-CH 60V 0.38A comes equipped with a variety of functions, including the following:

  • With a high breakdown voltage of 60 volts, this component is designed for use in high-voltage applications.
  • A low on-resistance of just 2 ohms helps to keep power losses to a minimum and boosts efficiency.
  • Easy gate drive thanks to the low gate threshold voltage of 1 volt at 250 microamperes.
  • Low gate charge (0.5 nC @ 4.5V) enables efficient and quick switching.
  • A temperature range of -55 degrees Celsius to 150 degrees Celsius is available for usage in severe conditions.

In general, the MOSFET N-CH 60V 0.38A is a reliable component frequently used in electronic circuits for switching and amplification applications. It is a versatile component that can handle high voltages and currents.


In conclusion, the MOSFET offered by Diodes Incorporated with the model number DMN62D0U-13 is an excellent choice for power management applications. Its excellent qualities, which include a wide operating temperature range, low on-state resistance, and fast switching speed, make it a versatile and trustworthy alternative for various applications. In addition, it has a high breakdown voltage of 60V, making it an excellent choice for electrical circuits that require switching and amplification. It also has a low gate threshold voltage, which is a plus.

At ICRFQ, we understand the importance of having high-quality electronic components to achieve project goals. Our team of experts is committed to providing top-notch customer service and finding the best solutions for your projects. So, whether you need the DMN62D0U-13 MOSFET or any other electronic component, we are here to assist you. Place your order today and take the first step toward success.

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