Part Number: FDN352AP

Manufacturer: onsemi

Description: MOSFET P-CH 30V 1.3A SUPERSOT

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of FDN352AP

Datasheet  FDN352AP datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Fairchild Semiconductor
Series PowerTrench?
Packaging Tape & Reel (TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 1.3A (Ta)
Rds On (Max) @ Id, Vgs 180 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge (Qg) @ Vgs 1.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 150pF @ 15V
Power – Max 460mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SuperSOT-3


The FDN352AP is a P-channel MOSFET transistor widely used in various electronic applications. This comprehensive guide aims to provide an in-depth understanding of the FDN352AP transistor, its specifications, features, and typical applications. Whether you are a beginner or an experienced electronics enthusiast, this guide will help you grasp the key aspects of this surface mount transistor.

Introduction to P-Channel MOSFETs

P-Channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of field-effect transistor that use a P-channel region as the conducting channel. They are widely used in electronic circuits for various applications, including power management, switching, and amplification. P-Channel MOSFETs operate by controlling the voltage applied to the gate terminal to regulate the flow of current between the source and drain terminals.

Compared to N-Channel MOSFETs, P-Channel MOSFETs have certain differences in terms of voltage polarities and operational characteristics. While N-Channel MOSFETs use a positive gate voltage to control the current flow, P-Channel MOSFETs require a negative gate voltage. This difference affects the circuit design and driving considerations when using P-Channel MOSFETs.

Key Features of FDN352AP

The FDN352AP is a specific P-Channel MOSFET transistor that offers several key features and specifications. Here are some of its notable characteristics:

  1. Voltage Rating: The FDN352AP has a maximum drain-source voltage (VDS) rating of 30V, indicating its ability to handle up to 30 volts of potential difference in the circuit.
  2. Current Handling Capability: This transistor can handle a maximum drain current (ID) of 1.3A (Ta), which signifies its capacity to handle current flow up to 1.3 amps under specified conditions.
  3. Power Dissipation: The FDN352AP has a power dissipation rating of 500mW (Ta), indicating the maximum amount of power that can be safely dissipated by the device without causing damage to its internal structure.
  4. Surface Mount Package: The FDN352AP is packaged in a SOT-23-3 package, which is a small surface mount package with three terminals (source, drain, and gate). This package is popular for its compact size and ease of mounting on circuit boards.
  5. Low On-Resistance: The FDN352AP offers a low drain-source on-resistance (RDS(on)), which is the resistance between the drain and source when the transistor is fully enhanced. A low on-resistance reduces power losses and improves efficiency in switching applications.
  6. Fast Switching Speed: This transistor has a fast switching speed, enabling quick switching transitions between on and off states. This characteristic is crucial for applications requiring rapid response times.
  7. Gate-Source Voltage (VGS) Threshold: The FDN352AP has a specified gate-source voltage threshold (VGS(th)) that determines the minimum voltage required to turn the transistor on. This parameter is essential for proper gate drive circuit design.
  8. Temperature Range: The FDN352AP operates within a specified temperature range, typically from -55°C to 150°C (Ta), ensuring reliable performance across a wide temperature spectrum.

These key features make the FDN352AP transistor suitable for a range of applications, including power management circuits, switching circuits, battery protection, and more. Understanding these features is crucial for effectively utilizing the FDN352AP in various electronic designs.

Electrical Specifications

Maximum Ratings

The maximum ratings of the FDN352AP transistor represent the limits beyond which the device may be damaged or its performance may be compromised. It is essential to operate the transistor within these specified limits to ensure its longevity and proper functionality. The maximum ratings for the FDN352AP transistor are as follows:

  1. Drain-Source Voltage (VDS): 30V This is the maximum voltage that can be applied across the drain and source terminals of the transistor.
  2. Gate-Source Voltage (VGS): ±20V This is the maximum voltage that can be applied between the gate and source terminals of the transistor.
  3. Drain Current (ID): 1.3A This is the maximum continuous drain current that the transistor can handle without exceeding the specified limits.
  4. Power Dissipation (PD): 500mW (Ta) This is the maximum power dissipation that the transistor can handle under normal operating conditions. Exceeding this limit may lead to overheating and potential device failure.
  5. Junction Temperature (TJ): 150°C This is the maximum temperature that the transistor junction can reach during operation. Operating the transistor above this temperature can lead to performance degradation or permanent damage.
  6. Storage Temperature Range (TSTG): -55°C to 150°C This represents the temperature range within which the transistor can be safely stored without affecting its performance.

Electrical Characteristics

Maximum Ratings

  • VDS (Drain-Source Voltage): 30V
  • VGS (Gate-Source Voltage): ±20V
  • ID (Drain Current): 1.3A
  • PD (Power Dissipation): 500mW (Ta)
  • TJ (Junction Temperature): 150°C
  • TSTG (Storage Temperature Range): -55°C to 150°C

Electrical Characteristics

  • VGS(th) (Gate-Source Threshold Voltage)
  • RDS(on) (Drain-Source On-Resistance)
  • IGSS (Gate-Source Leakage Current)
  • IDSS (Drain-Source Leakage Current)
  • Ciss (Input Capacitance)
  • Coss (Output Capacitance)
  • Crss (Reverse Transfer Capacitance)

Thermal Resistance

  • RθJA (Junction-to-Ambient Thermal Resistance)
  • RθJC (Junction-to-Case Thermal Resistance)

Understanding these specifications is crucial for proper operation, circuit design, and thermal management of the FDN352AP transistor.


Power Management Circuits

The FDN352AP transistor is commonly used in power management circuits due to its ability to handle moderate current levels and voltage ratings. It can be utilized in various applications such as:

  • Voltage regulators: The FDN352AP can be used in voltage regulator circuits to stabilize and regulate voltage levels for powering electronic components. It helps maintain a consistent power supply and protects sensitive devices from voltage fluctuations.
  • DC-DC converters: The transistor is suitable for use in step-up or step-down voltage converter circuits, enabling efficient power conversion and distribution between different voltage levels.
  • Power switches: It can act as a power switch to control the flow of current in power management circuits, allowing efficient power distribution and control.

Switching Circuits

The FDN352AP’s fast switching speed and low on-resistance make it suitable for switching applications where rapid on/off transitions are required. Some common applications include:

  • Load switches: The transistor can be used as a load switch to control the power supply to specific loads or subsystems in electronic devices. It allows efficient power management and helps conserve energy.
  • Motor control: It can be utilized in motor control circuits to switch the power supply to motors, enabling precise control of motor speed and direction.
  • Relay drivers: The FDN352AP can drive relays, providing high-speed switching capabilities in various automation and control systems.

Battery Protection

The FDN352AP transistor plays a vital role in battery protection circuits, safeguarding batteries from overcharging, over-discharging, and overcurrent conditions. Some applications include:

  • Battery charging circuitry: It can be used in battery charging circuits to control the charging process, monitor charging currents, and prevent overcharging, ensuring optimal battery performance and longevity.
  • Battery protection modules: The transistor is often incorporated into battery protection modules that protect batteries from excessive discharge currents, preventing damage and extending battery life.
  • Battery management systems: It can be a part of battery management systems used in portable devices or electric vehicles to ensure safe and efficient battery operation. The transistor helps monitor battery conditions, balance charging and discharging, and protect the battery from various faults.

These are just a few examples of the FDN352AP transistor’s typical applications. Its versatility and performance characteristics make it a valuable component in power management, switching, and battery protection circuits.

Final Thoughts

The FDN352AP transistor is a versatile component with a range of applications. It is commonly used in power management circuits, switching circuits, and battery protection. Its features and specifications make it suitable for voltage regulation, DC-DC conversion, power switching, load control, motor control, relay driving, and battery protection. Understanding its capabilities is vital for efficient circuit design.

To procure the FDN352AP transistor, you can order it from ICRFQ, a leading electronic component distributor based in China. ICRFQ offers a wide selection of electronic components and provides reliable sourcing and delivery services. We can assist you in obtaining the FDN352AP transistor and other components for your electronic projects.

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