Part Number: IPW65R041CFD

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 650V 68.5A TO247-3

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of IPW65R041CFD

Datasheet  IPW65R041CFD datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Infineon Technologies
Series CoolMOS?
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 650V
Current – Continuous Drain (Id) @ 25°C 68.5A (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 100V
Power – Max 500W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3


Infineon’s IPW65R041CFD, which is part of their CoolMOSTM CFD2 line, stands out as a top choice for engineers and designers who work with power electronics. This second-generation product is better than its predecessor, the 600V CFD because it has an integrated fast body diode and uses less energy. It also has a number of other changes that make it a strong competitor in the market. This detailed guide goes over the IPW65R041CFD’s features, benefits, and uses, showing why it’s the best choice for power conversion systems.

Evolution of the CoolMOS™ CFD2 Series

The CoolMOSTM CFD2 line from Infineon is the next generation of high-voltage MOSFETs, which is a big step forward in power electronics. The IPW65R041CFD is one of its best models because it works better and uses less energy than its predecessor. Let’s look at the main benefits of the CFD2 series and why the IPW65R041CFD is a top choice for power electronics engineers.


  • Improved energy efficiency: The CFD2 series cuts down on conduction and switching losses, which saves a lot of energy and lowers running costs.
  • Improved EMI Behavior: Because the CFD2 MOSFETs switch on and off more slowly, voltage jumps and ringing are less likely to happen. This makes them better at dealing with electromagnetic interference.
  • Integrated Fast Body Diode: The IPW65R041CFD’s built-in body diode makes designs easier, improves switching, and makes the device more reliable overall.

Key Features and Benefits

The inbuilt fast body diode is one of the primary features that set the IPW65R041CFD distinctively and boost its performance in high-voltage power applications. A diode is included in the MOSFET structure itself in this cutting-edge design, providing various advantages that assist power conversion systems:

  • Efficient and speedy Switching: The integrated fast body diode provides seamless and speedy switching transitions during both turn-on and turn-off cycles. This property decreases the switching losses associated with typical external diodes, resulting in an enhanced overall efficiency of the MOSFET.
  • Reduced Power Losses: The MOSFET’s body diode is integrated into the device, reducing the number of parasitic parts in the circuit. This reduces conduction losses and power dissipation. This reduction in losses translates to improved energy efficiency and adds to significant energy savings in power conversion systems.
  • Improved System Reliability: The integrated fast body diode enhances the robustness and reliability of the IPW65R041CFD. Due to its innovative design, there is less chance of failure from faulty external diodes, resulting in more dependable operation over the component’s lifetime.
  • Simplified Circuit Design: Integration of the body diode eliminates the need for extra external diodes in the circuit, simplifying the overall system design and decreasing component count. This not only saves board space but also streamlines the manufacturing process and decreases expenses.
  • Faster Reverse Recovery Time: The integrated body diode’s quick switching characteristics result in a faster reverse recovery time, which reduces reverse conduction losses and improves the MOSFET’s ability to handle high-frequency switching applications.
  • Improved Switching Performance: The fast switching speed of the integrated body diode allows the MOSFET to achieve lower switching losses, which lowers voltage spikes and ringing in the system. This, in turn, contributes to enhanced electromagnetic interference (EMI) behavior and smoother commutation, lowering the probability of EMI-related difficulties.

In summary, the integrated fast body diode of the IPW65R041CFD offers substantial advantages in terms of efficient and speedy switching, decreased power losses, and better system reliability. It is the best option for a variety of power conversion applications, such as power supplies, motor drives, and renewable energy systems, thanks to its capacity to simplify circuit design and enhance switching performance. Engineers and designers can benefit from these capabilities to produce more energy-efficient and reliable power electronics solutions utilizing the IPW65R041CFD.


The IPW65R041CFD excels in various applications

● Power Supplies and Converters

Its integrated fast body diode and high energy efficiency enable seamless power conversion with minimal losses and enhanced system reliability.

● Motor Control

The MOSFET’s superior commutation behavior ensures smooth switching and reduced EMI, making it ideal for precise motor control applications.

● Renewable Energy Systems

With improved energy efficiency and robustness, the IPW65R041CFD enhances the performance and reliability of renewable energy systems like solar inverters and wind turbine converters.

Performance Comparison: IPW65R041CFD vs. Competing MOSFETs

The IPW65R041CFD from Infineon stands out as a strong contender against other products on the market when it comes to high-voltage MOSFETs. Let’s do a fair and unbiased comparison, emphasizing the IPW65R041CFD’s distinct characteristics and how it outperforms competing goods.

● Integrated Fast Body Diode

A fast body diode included in the IPW65R041CFD offers seamless and effective switching during both turn-on and turn-off cycles. lower switching losses, lower power dissipation, and improved overall energy efficiency are the outcomes of this integration.

The IPW65R041CFD’s design assures higher switching performance, which translates to decreased power losses and increased system dependability. Competitor Analysis: While some competitor MOSFETs may offer integrated body diodes.

● Enhanced EMI Behavior

Advantage: Because of the IPW65R041CFD’s smoother commutation behavior, switching voltage spikes and ringing are reduced. Due to this benefit, electromagnetic interference (EMI) performance is greatly improved, making it a dependable option for applications that are vulnerable to EMI problems.

Analysis of Alternative MOSFETs: While other MOSFETs may assert that they have lower EMI, the IPW65R041CFD stands out for having a distinctive commutation characteristic that guarantees a more stable and quieter operation in high-power applications.

● Energy Efficiency

Advantage: When compared to numerous other MOSFETs, Infineon’s IPW65R041CFD exhibits higher energy efficiency. Greater energy savings and lower operational expenses are a result of its decreased conduction and switching losses.

Competitor Analysis: While competing MOSFETs might provide respectable energy efficiency, the integrated body diode and optimized design of the IPW65R041CFD result in appreciable increases in overall power conversion efficiency.

● Robustness and Reliability

Advantage: The IPW65R041CFD has been carefully designed for increased resilience and dependability, ensuring stable operation even under difficult circumstances. For applications that need long-term performance and little maintenance, this capability is essential.

Competition Analysis: While some competing devices may show reliability, the IPW65R041CFD stands out as a dependable option for essential power electronics applications thanks to its reputation for great performance in real-world settings.


The IPW65R041CFD from Infineon is the top choice for high-voltage power applications. With its integrated fast body diode, improved energy efficiency, softer commutation behavior, and excellent EMI performance, it outperforms competitors. Engineers seeking unmatched performance and reliability should confidently consider it for their projects. Contact ICRFQ, the leading electronic components distributor in China, to secure your order and discover the remarkable capabilities of the IPW65R041CFD today. Power a better future with this game-changing MOSFET.

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