Part Number: IRF1404ZPBF

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 40V 180A TO220AB

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of IRF1404ZPBF

Datasheet  IRF1404ZPBF datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current – Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) @ Vds 4340pF @ 25V
Power – Max 200W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

IRF1404ZPBF Introduction

The IRF1404ZPBF is a state-of-the-art power MOSFET built specifically for applications requiring high-performance levels. This device is able to handle repetitive avalanche up to the maximum junction temperature of 175 degrees Celsius and is capable of quick switching because to the sophisticated process technology and ultra-low on-resistance that it possesses. It is the perfect answer for high-power applications that need to switch at a rapid speed while yet maintaining a high level of reliability and efficiency. In addition to this, it does not include any lead, therefore not only is it compliant with the most recent laws, but it is also favorable to the environment. The IRF1404ZPBF is an excellent choice for obtaining greater performance and dependability in any high-power application, including the design of a power supply, a motor control system, or any other high-power application that you may be working on.

IRF1404ZPBF Description

This HEXFET® Power MOSFET makes use of the most recent manufacturing processes in order to produce an extraordinarily low onresistance relative to the amount of silicon area it covers. This design also includes features such as a rapid switching speed, an increased repeating avalanche rating, and a junction working temperature of 175 degrees Celsius. Because of the combination of these characteristics, this design produces a device that is both highly effective and dependable, and it is suitable for usage in a wide variety of contexts.

The IRF1404ZPBF Features

  • Ultra-Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free

The IRF1404ZPBF Detailed Features

The IRF1404ZPBF is a high-performance MOSFET that takes advantage of the most recent advancements in process technology in order to provide very low on-resistance and lightning-fast switching rates. Because it is intended to function at a high temperature of 175 degrees Celsius, the device is ideally suited for use in demanding applications and challenging settings.

One of the most notable characteristics of the IRF1404ZPBF is its low on-resistance, which contributes to the reduction of power loss and the enhancement of operational efficiency. Because of the high switching speed of the component, it can react promptly to voltage shifts, lowering the total amount of power that the system needs to function.

The IRF1404ZPBF is also capable of repeated avalanches, which enables it to operate safely in harsh situations and survive strong voltage spikes. This capability is what makes the IRF1404ZPBF unique. Because of this characteristic, it is particularly well-suited for uses that call for high levels of reliability and longevity.

The IRF1404ZPBF is not only built to function very well but it is also made to have a low impact on the surrounding ecosystem. The absence of lead in the equipment ensures that it complies with the RoHS requirements and lessens the negative effects it has on the environment.

Overall, the IRF1404ZPBF is a versatile and reliable MOSFET that offers a combination of superior process technology, low on-resistance, fast switching rates, and high-temperature performance. This is all made possible by the IRF1404ZPBF’s ability to operate at high temperatures. It is an excellent choice for a wide variety of applications, including as power conversion, motor control, and high-voltage switching, amongst others.

IRF1404ZPBF Specifications

The IRF1404ZPBF is a high-performance N-channel power MOSFET part of Infineon Technologies’ HEXFET series. It was developed for use in power applications that demand high current carrying capability, low on-state resistance, and fast switching, and it is a part of the HEXFET series.

Because it comes in a TO-220AB package and can be mounted via hole, the MOSFET is very straightforward to include into a variety of different circuit designs. As a result of its maximum drain-source voltage of 40V and its continuous drain current of 180A at 25°C, it is well suited for use in applications that require large levels of power.

The IRF1404ZPBF has a low on-state resistance of 3.7mOhm at 75A and 10V, which helps reduce the amount of power that is lost and improves the efficiency of the system as a whole. The fact that the gate threshold voltage is set to 4V at 250 A guarantees that the device can be driven by a diverse selection of signals with typical logic levels. At a voltage of 10 volts, the gate charge is only 150 nC, which is a moderate amount. This suggests that the device is simple to operate and can be switched on and off in a short amount of time.

The MOSFET has the capability of withstanding a gate-source voltage of up to 20V, which ensures that it can be utilized in various applications without the fear of being damaged. It has a power dissipation of 200W at a maximum junction temperature of 175°C, which implies that it can be utilized in high-power applications without overheating. Because the gadget is able to function in temperatures ranging from -55 degrees Celsius to 175 degrees Celsius, it is suitable for usage in challenging settings.

When it comes to high-performance power applications that require low on-state resistance, high current carrying capability, and rapid switching, the IRF1404ZPBF is a fantastic option to consider. Because of its high current rating and low resistance while in the on state, it is an excellent option for high-power motor control, power supply, and other applications with analogous requirements. As a result of its fast switching capability, it is well suited for use in switching regulators as well as other high-frequency applications.

In general, the IRF1404ZPBF is a highly adaptable and high-performance MOSFET that is suitable for a wide variety of power applications. This is because of its versatility. Engineers who want to create high-performance power systems will find it to be a perfect solution because of the excellent performance features it possesses as well as the durable package design it employs.


Looking for a high-power MOSFET that won’t let you down? Forget about that; just get the IRF1404ZPBF. This cutting-edge MOSFET’s ultra-low on-resistance and advanced manufacturing technology make fast switching and a higher repeated avalanche rating possible. Due to its high-temperature operation and environmentally preferable lead-free construction, it is well suited for demanding applications and meets RoHS standards.

The IRF1404ZPBF is a great option for high-power applications, including power supplies, motor controllers, and more, because of its high current carrying capacity, low on-state resistance, and rapid switching. As a result of its reliability and great performance, this MOSFET can be used in various applications. So why wait? Contact ICRFQ today to get this best product at an affordable price.

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