IRF7341TRPBF

IRF7341TRPBF

Part Number: IRF7341TRPBF

Manufacturer: Infineon Technologies

Description: MOSFET 2N-CH 55V 4.7A 8-SOIC

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of IRF7341TRPBF

Datasheet  IRF7341TRPBF datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Arrays
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current – Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 740pF @ 25V
Power – Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154″, 3.90mm Width)
Supplier Device Package 8-SO

IRF7341TRPBF Introduction

IRF7341TRPBF is a high-performance power MOSFET  from International Rectifier’s Fifth Generation HEXFETs. This device was made using advanced processing methods that let it have a very low on-resistance per silicon area, a fast switching speed, and a ruggedized design. As a result, the IRF7341TRPBF is an effective and reliable device that can be used in a wide range of power applications. In this piece, we’ll talk in depth about the IRF7341TRPBF’s features, benefits, applications, and technical specifications.

IRF7341TRPBF Description

The IRF7341TRPBF is a high-performance power MOSFET made by International Rectifier. It is part of the Fifth Generation of HEXFETs. This device is made with advanced processing methods that let it have a very low on-resistance per silicon area, a fast switching speed, and a design that makes it more durable. So, the IRF7341TRPBF is a device that can be used in a wide range of power uses because it is efficient and reliable. In this piece, we’ll talk in depth about the IRF7341TRPBF’s features and benefits, as well as its uses and technical specs.

IRF7341TRPBF Features

The IRF7341TRPBF power MOSFET has a number of features and benefits that make it a useful and reliable device for a wide range of power uses. Here are some of the IRF7341TRPBF’s most important traits and benefits:

  • Low on-resistance per silicon area: The IRF7341TRPBF is made with advanced processing methods that allow it to have a very low on-resistance per silicon area. This low on-resistance helps to keep power losses to a minimum and makes the gadget work better as a whole.
  • Fast switching speed: The IRF7341TRPBF is made to have a fast switching speed, which lets it turn on and off quickly. This function is important for applications that need to switch at a high frequency, and it helps to keep switching losses to a minimum.
  • Ruggedized device design: The device is made to be very sturdy and reliable by being made to be “ruggedized.” This is an important trait for power applications where the device may be exposed to harsh conditions.
  • modified leadframe: The IRF7341TRPBF’s thermal properties are improved by its modified leadframe. This feature helps the device get rid of heat quickly, so it can work at a high power level without getting too hot.
  • Multiple-die capability: The IRF7341TRPBF comes in a SO-8 package, which has multiple-die capability. This means that multiple devices can be used in an application while taking up much less room on the board. This makes the device great for power uses where there isn’t much room on the board.
  • In short, the IRF7341TRPBF is an efficient and reliable device for a wide range of power uses because it has a low on-resistance per silicon area, a fast switching speed, a ruggedized device design, a customized leadframe, and the ability to use more than one die.
  • uses: Because of its advanced features and benefits, the IRF7341TRPBF is a power MOSFET that can be used in a wide range of uses. Here are some examples of how the IRF7341TRPBF can be put to use:
  • Power supplies: The IRF7341TRPBF can be used to control the voltage and current coming out of power sources. It has a low on-resistance per silicon area and a fast switching speed, which allow for efficient power transfer, reduce power loss, and make the power source more efficient overall.
  • Motor control: The IRF7341TRPBF can be used to handle motor speed and direction in motor control applications. It can handle high currents and voltage spikes because it has a tough design and can switch on and off quickly. This makes it perfect for controlling motors.
  • DC-DC converters: The IRF7341TRPBF can be used in DC-DC converters to change from one level of DC power to another. Its low on-resistance per silicon area and fast switching speed make it possible to move power quickly and efficiently. This reduces power losses and makes the converter more efficient as a whole.
  • Lighting systems: You can use the IRF7341TRPBF in lighting systems, like LED drivers and ballasts. Its low on-resistance per silicon area and fast switching speed make it easy to move power. This cuts down on power loss and makes the lighting system more efficient as a whole.

In short, the IRF7341TRPBF can be used for many different things, such as power sources, motor control, DC-DC converters, and lighting systems. Its advanced features, such as low on-resistance per silicon area, fast switching speed, and a ruggedized device design, make it an ideal choice for these uses, allowing for efficient and reliable operation.

IRF7341TRPBF Technical specifications

Here are the technical specifications of the IRF7341TRPBF:

  1. Maximum Drain-Source Voltage (VDS): 55V
  2. Maximum Continuous Drain Current (ID): 6.5A
  3. Maximum Power Dissipation (PD): 2W
  4. Maximum Gate-Source Voltage (VGS): ±20V
  5. Maximum Junction Temperature (Tj): 175°C
  6. Thermal Resistance (RθJA): 62°C/W
  7. Threshold Voltage (VGS(th)): 1.35V
  8. Static Drain-Source On-Resistance (RDS(on)): 12mΩ (VGS = 10V)

Based on these details, the IRF7341TRPBF is a high-performance power MOSFET with a maximum drain-source voltage of 55V and a maximum constant drain current of 6.5A. It has a low on-resistance per silicon area of 12m, which means that it wastes less power and works better. The device can use up to 2W of power and has a thermal resistance of 62°C/W, which means it can work at high temperatures without getting too hot. The device is easy to control because it has a maximum gate-source voltage of 20V and a threshold voltage of 1.35V. It can also work reliably even in high-temperature settings because its maximum junction temperature is 175°C.

Soldering Techniques

The IRF7341TRPBF can be joined using vapor phase, infrared, and wave soldering, among other methods.

Vapor phase soldering: In this method, the device is put in a heated vapor that melts the solder, which then hardens on the surface of the device. Vapor phase soldering is a reliable and accurate method that makes good solder joints.

Infrared soldering: Infrared soldering heats the object and melts the solder with infrared light. The heat source is pointed at the solder joint, and the device is held in place until the solder hardens. Infrared soldering is a fast and effective method that can be used to make a lot of things at once.

Wave soldering: In wave soldering, the item is moved over a wave of molten solder. The device is put on a moving belt that moves it over the wave of solder. This wets the leads and makes a strong solder joint. Wave soldering is an inexpensive method that can be used to make a lot of things.

All of these methods of soldering can be used with the IRF7341TRPBF. But it’s important to follow the instructions for each method to make sure the soldering is done right and keep the device from getting damaged.

Conclusion

In conclusion, the IRF7341TRPBF is a flexible electronic part that can be connected in a number of ways, depending on the needs of the project. It is important to carefully follow the instructions to make sure the soldering goes well and to keep the device from getting damaged. Whether you choose vapor phase, infrared, or wave soldering, each method has its own benefits, such as speed, accuracy, and low cost. If you need more information about this or any other electronic component, don’t hesitate to call ICRFQ, which is China’s top distributor of electronic components. Our experts are always ready to help you find the best product at a price you can afford. Contact us right away to get going!

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