IRFBA1405P MOSFET

Technical Specifications of IRFBA1405P

Datasheet	IRFBA1405P datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	55V
Current – Continuous Drain (Id) @ 25°C	174A (Tc)
Rds On (Max) @ Id, Vgs	5 mOhm @ 101A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	260nC @ 10V
Input Capacitance (Ciss) @ Vds	5480pF @ 25V
Power – Max	330W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	Super-220?-3 (Straight Leads)
Supplier Device Package	SUPER-220? (TO-273AA)

IRFBA1405P Introduction

Power MOSFETs like the IRFBA1405P are frequently employed in various electronic applications. Metal-oxide-semiconductor field-effect transistors, or MOSFETs, are crucial to contemporary electronics.

The IRFBA1405P is particularly helpful because of its quick switching speed, low on-state resistance, and high drain-source voltage rating. It frequently appears in audio amplifiers, motor control, and power supply circuits. Understanding the IRFBA1405P’s capabilities and applications can be useful for amateurs, students, and professionals alike because of its performance and versatility, which make it a crucial component in many electrical systems.

IRFBA1405P Description

The HEXFET® Power MOSFETs’ Stripe Planar design uses the most recent manufacturing methods to provide extraordinarily low on-resistance per silicon area. This MOSFET also has a junction operating temperature of 175 °C, quick switching times, and enhanced robustness in single- and repeated-avalanche situations. The Super-220 TM package can accommodate significantly larger silicon die while maintaining the same mechanical form and pinout as the industry standard TO-220.

As a result, the TO-247 package’s current handling capacity is much more than that of the TO-220 package. It is perfect for minimizing the component count in multi-parallel TO-220 applications, reducing system power consumption, upgrading existing designs, or having TO-247 performance in a TO-220 outline thanks to the combination of extremely low on-resistance silicon and the Super-220 TM packaging. This package has been created to meet the Q101 qualification requirement for the automobile industry. These advantages render this design an effective and dependable tool for various applications.

Technical Specifications of The IRFBA1405P MOSFET:

• 55V is the drain-source voltage (Vds).
• 169A is the continuous drain current (Id).
• Rds(on) On-State Resistance: 4.2 m (maximum).
• Gate Charge: 290nC (Qg).
• 640nC is the total gate charge (Qgtot).
• 8400pF is the input capacitance (Ciss).
• 1320pF is the output capacitance (Coss).
• 560pF is the reverse transfer capacitance (Crss).
• Voltage Threshold (Vth): 2V (maximum).

The IRFBA1405P is a high-performance MOSFET that meets these requirements, making it appropriate for high-power applications. Its large gate charge and capacitance enable quick switching speeds, while its low on-state resistance enables effective power transfer. It can be used in various circuits due to its high drain-source voltage rating and continuous drain current.

Pin configurations

• The gate (G), source (S), and drain (D) pins on the IRFBA1405P MOSFET are all that are present (D).
• The input pin used to adjust the conductivity of the MOSFET is called the gate pin. The MOSFET can be turned on and off by applying a voltage to the gate with respect to the source. The maximum +/- 20V gate-source voltage is imposed.
• The ground or negative rail of the circuit is linked to the source pin, also known as the common pin.
• The output pin, the drain pin, is attached to the load or power supply. The drain-source voltage should not exceed the maximum rating of 55V.

It is significant to remember that the IRFBA1405P is a polarity-sensitive device, necessitating the right orientation of the source and drain pins. The MOSFET will become damaged if the source pin is connected to the positive rail and the drain pin is connected to the load.

In conclusion, the drain pin is connected to the load or power supply, the source pin is connected to the ground or negative rail, and the gate pin is utilized to regulate the conductivity of the MOSFET. To prevent the MOSFET from being harmed, it’s crucial to connect the device with the correct polarity.

Applications

When high voltage and current switching is necessary, the IRFBA1405P MOSFET is frequently employed in various electronic applications. These are a few instances of its uses:

• Energy Sources: A device’s power supply can be controlled by the IRFBA1405P, allowing it to be turned on and off as needed. Applications like motor controllers and computer power supplies can benefit from this.
• Switching powerful LED lights is possible with the IRFBA1405P. The MOSFET may drive LED arrays or strips, and the Lights can be muted by pulsing the gate.
• Audio Amplifiers: To regulate the output signal’s loudness, audio amplifiers can use the IRFBA1405P. The MOSFET’s ability to control the current flowing to the speakers allows for volume adjustment.
• Motor Control: To control a motor’s speed and direction, motor control circuits can use the IRFBA1405P. The motor may run faster or slower by adjusting the voltage given to it, and by switching the polarity, it can spin oppositely.

The IRFBA1405P is an effective voltage-level converter that can be utilized in switching regulators. It is possible to adjust the input voltage to a lower output voltage by briefly turning on and off the MOSFET, which enables effective power conversion.

IRFBA1405P is a flexible MOSFET that can be utilized in various applications that call for high voltage and current switching. Power control and regulation applications benefit greatly from their quick switching time, low on-state resistance, and high maximum current.

Advantages

• High Voltage and Current Ratings: The IRFBA1405P is appropriate for applications requiring high power handling capacity due to its high maximum drain-source voltage and maximum continuous drain current.
• Low On-Resistance: The IRFBA1405P has a low on-state resistance, making power transfer effective and lowering MOSFET power loss.
• Rapid response times and precise power regulation are made possible by the IRFBA1405P’s fast switching speed.
• The IRFBA1405P is appropriate for digital circuits since it is simple to drive and only needs a minimal gate voltage to turn on.
• High Thermal Conductivity: The IRFBA1405P has a high thermal conductivity that enables effective heat dissipation and lowers the possibility that the MOSFET may sustain thermal damage.

Disadvantages

• Gate Capacitance: The IRFBA1405P has a relatively high gate capacitance, which may cause slower switching times and higher power loss in high-frequency applications.
• The IRFBA1405P’s relatively high gate threshold voltage may prevent it from being used in applications requiring low-voltage drive.
• Restricted Uses: The IRFBA1405P is primarily intended for use in high- and high-current applications and might not be acceptable in low-voltage or low- currents applications.
• Cost: The IRFBA1405P may be more expensive than other MOSFETs with comparable specs, preventing it from being used in applications where cost is important.
• Big Size: The IRFBA1405P MOSFET may not be suitable for some applications due to its size.

The IRFBA1405P is a great option for high voltage and high current applications because of its many benefits. However, its employment in some applications may be constrained by its comparatively high gate capacitance, gate threshold voltage, big size, and expensive price.

Conclusion

The IRFBA1405P is a strong and versatile MOSFET that performs excellently in various applications. Its high current capacity, low resistance, and fast switching speed make it a go-to choice for power supply, motor control circuits, and audio amplifiers. However, like any technology, it has its limitations, and understanding them is essential to get the most out of it.

To fully enjoy the benefits of the IRFBA1405P, following the manufacturer’s guidelines for appropriate use and selecting supplementary components carefully is recommended. It’s also important to pay close attention to the circuit’s operating conditions, including voltage and temperature limits, to ensure safe and reliable operation.

And hey, let’s not forget that ICRFQ has covered you with affordable prices on the IRFBA1405P and other top-notch electronic components. With our team of knowledgeable specialists, we’ll help you get the parts you need for your projects, whether you’re a seasoned electronics engineer or just starting out. So why wait? Contact ICRFQ today and start bringing your ideas to life!

The Latest And Most Popular Parts That You May Also Like