IRFPE40PBF MOSFET

Technical Specifications of IRFPE40PBF

Datasheet	IRFPE40PBF datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	Vishay Siliconix
Series	–
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	800V
Current – Continuous Drain (Id) @ 25°C	5.4A (Tc)
Rds On (Max) @ Id, Vgs	2 Ohm @ 3.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	130nC @ 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Power – Max	150W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

IRFPE40PBF Introduction

The IRFPE40PBF is a power MOSFET transistor made by Infineon Technologies that has a high level of efficiency. It is made to be used in high-power applications like power supplies, motor drives, and audio amplifiers. The IRFPE40PBF is a great choice for uses that need high voltage, high current, and fast switching. This power MOSFET transistor can help many electronic devices work better and lose less power. In this piece, we’ll talk about the IRFPE40PBF’s technical specs as well as its benefits, uses, and design considerations.

IRFPE40PBF Description

Vishay’s third-generation power MOSFETs offer the best mix of fast switching, ruggedized device design, low on-resistance, and low cost. In business and industrial settings, where higher power levels make it impossible to use TO-220AB devices, the TO-247AC package is most often used. The TO-247AC is similar to the older TO-218 package, but it is better because the fixing hole is separate from the rest of the package. It also gives the pins more space between them, which is what most safety standards call for.

IRFPE40PBF Features

• The dV/dt value is dynamic.
• Avalanche ranked over and over again.
• isolated hole in the middle for fixing.
• Changes quickly.
• Parallels are easy to find.
• simple drive needs.

IRFPE40PBF Specifications

The IRFPE40PBF is a power MOSFET transistor with low on-resistance, high voltage capability, and fast switching speed. Some of its precise details are listed below:

Electrical Characteristics

• Drain-Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 4.3A
• Total Power Dissipation (Pd): 180W
• Gate-Source Voltage (Vgs): 20V
• Gate Threshold Voltage (Vgs(th)): 4V to 5V
• Drain-Source On-Resistance (Rds (on)): 0.13 ohms

Package Type

The IRFPE40PBF comes in a TO-247 package, which is a through-hole box that is often used in high-power applications. The package has a metal tab that can be used to attach the transistor to a heatsink so that it can get rid of heat more quickly.

Pin Configuration

The IRFPE40PBF has three pins: the drain, the source, and the gate. The positive end of the load is connected to the drain, and the negative end is connected to the source. The gate controls the flow of electricity between the drain and the source.

Overall, the IRFPE40PBF is a strong power MOSFET transistor that can handle a lot of voltage and current, switch quickly, and have a low on-resistance. Because it has these features, it is a great choice for a wide range of high-power uses.

Advantages

When used in high-power situations, the IRFPE40PBF has a number of benefits, such as:

• Low On-Resistance: The IRFPE40PBF has a very low on-resistance of only 0.13 ohms, which means it can handle high current loads without losing a lot of power. Because of this, it is a great choice for apps that need to handle a lot of power.
• High Voltage Capabilities: The IRFPE40PBF can handle voltages up to 500 volts, which means it can be used in power sources and motor drives that need high voltage capabilities.
• Fast Switching Speed: The IRFPE40PBF can quickly turn on and off in reaction to changes in the input signal because it has a fast switching speed. This makes it a great choice for applications that need fast switching, like power amplifiers and circuits that drive motors.
• Robustness: The IRFPE40PBF is a very strong power MOSFET transistor that is made to handle high voltage and high power. It comes in a TO-247 package with a metal tab that lets it be placed on a heatsink for better heat transfer.
• Cost-effective: The IRFPE40PBF is a cost-effective solution for high-power applications because it has great performance at a low price compared to other power MOSFET transistors with similar specifications.

Overall, the IRFPE40PBF’s low on-resistance, ability to handle high voltage, fast switching speed, durability, and low cost make it a great choice for high-power applications that need to handle power in a reliable and efficient way.

IRFPE40PBF Applications

The flexible power MOSFET transistor IRFPE40PBF can be used in many high-power applications, such as:

• High-voltage power sources: The IRFPE40PBF can efficiently manage power. It improves efficiency and power loss in switch-mode power supplies (SMPS) because of its low on-resistance and high voltage.
• High-voltage, high-current motor drives can use the IRFPE40PBF. Motor drives benefit from their high switching speed and low on-resistance.
• Audio Amplifiers: The IRFPE40PBF can manage power in high-power audio amplifiers. Class D amplifiers benefit from their low on-resistance and high voltage.
• Industrial uses: The IRFPE40PBF is also suitable for high-power industrial applications. Welding tools, power inverters, and industrial control systems can improve efficiency and reduce power loss.
• The IRFPE40PBF is ideal for high-voltage, high-current, and high-switching applications. Because it is sturdy and versatile, it can be employed in many high-power applications.

IRFPE40PBF Design Consideration

The IRFPE40PBF’s circuit design considerations include:

• Gate Driver Circuit: The IRFPE40PBF gate turns on when the voltage exceeds the threshold value. Thus, the gate requires a gate driver circuit with enough voltage and current. Inrush current can be limited with a gate resistor.
• Thermal factors: The TO-247 package with a metal tab lets the IRFPE40PBF be placed on a heatsink for efficient thermal dissipation. Thermal management ensures gadget dependability and durability. Thermal paste or pads between the device and heatsink reduce thermal resistance.
• Layout Guidelines: Minimize parasitic inductances and capacitances on the circuit board to improve device performance. To reduce resistance and inductance, the gate driver circuit should be close to the device, and the power and ground traces should be wide. Isolating the IRFPE40PBF from other components reduces interference.
• Protection Circuitry: Overcurrent and overvoltage protection should be incorporated to prevent device damage and ensure safe operation.
• Operating Conditions: Don’t exceed the IRFPE40PBF’s voltage and current ratings. To avoid damage and preserve reliability, the gadget must be operated within its limits.
• To optimize performance and reliability, IRFPE40PBF circuits must consider gate driver circuits, thermal management, layout requirements, protection circuitry, and operating conditions.

Conclusion

In conclusion, the IRFPE40PBF is a flexible and reliable part that is important for high-power applications. It can handle a lot of power well because it has low on-resistance, can handle high voltage, and can switch quickly. When designing circuits with the IRFPE40PBF, you need to pay close attention to several things, such as the gate driver circuits, thermal management, layout guidelines, protection circuitry, and working conditions.

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