IRGP4063DPBF IGBT Transistors

Technical Specifications of IRGP4063DPBF

Datasheet	IRGP4063DPBF datasheet
Category	Discrete Semiconductor Products
Family	Transistors – IGBTs – Single
Manufacturer	Infineon Technologies
Series	–
Packaging	Bulk
IGBT Type	Trench
Voltage – Collector Emitter Breakdown (Max)	600V
Current – Collector (Ic) (Max)	96A
Current – Collector Pulsed (Icm)	144A
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Power – Max	330W
Switching Energy	625μJ (on), 1.28mJ (off)
Input Type	Standard
Gate Charge	95nC
Td (on/off) @ 25°C	60ns/145ns
Test Condition	400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr)	115ns
Package / Case	TO-247-3
Mounting Type	Through Hole
Supplier Device Package	TO-247AC

An insulated gate bipolar transistor with an ultrafast soft recovery diode, IRGP4063DPBF, can be found under part number IRGP4063DPBF. The collector current of an IRGP4063DPBF is 48A, while the voltage between the emitter and collector is 600V.

IRGP4063DPBF Features

• IGBT technology with a low VCE (ON) trench voltage.
• Fewer losses when switching.
• The maximum temperature at the Junction is 175 degrees Celsius.
• 5 S completes the SOA short circuit.
• Square RBSOA.
• 100% of the components were tested for four times their rated current (ILM).
• Positive VCE (ON) Temperature co-efficient.
• Extremely rapid and gentle Recovery Co-Pak Diode.
• A close distribution of the parameters.
• Lead-Free package.

IRGP4063DPBF Benefits

• Excellent Performance in an Extremely Diverse Group of Uses
• Low VCE (ON) and low switching losses make this component suitable for use across a broad spectrum of switching frequencies.
• Robust transient performance with an emphasis on improving reliability
• Excellent current sharing in the operation of parallel circuits
• Low EMI

IRGP4063DPBF Specification

Frequently Used Questions

What exactly is a bipolar transistor with an insulated gate?

The most typical application for an insulated-gate bipolar transistor, also referred to as an IGBT, is as an electronic switch. The ability to combine great efficiency with quick switching came along as technology advanced. Four alternating layers make up its structure, which is managed by a metal-oxide-semiconductor (MOS) gate mechanism. These layers are P-N-P-N in order.

IGBTs have a topologically identical structure to that of a thyristors with a “MOS” gate (also known as a MOS-gate thyristors). Still, the action of the thyristors is eliminated, leaving only the action of the transistor available across the full device’s operational range. It is utilized in high-power applications such as variable-frequency drives (VFDs), , arc-welding machines, electric automobiles, trains, variable-speed refrigerators lamp ballasts, induction hobs, and air conditioners switching power supply.

IGBTs are used in switching amplifiers in audio and industrial control systems because of their ability to produce complicated waveforms with pulse-width modulation and low-pass filters. This is since IGBTs are intended to flip on and off very quickly. When modern devices are used for switching applications, they feature pulse repetition rates that extend well into the ultrasonic-range frequencies. These frequencies are at least ten times higher than the audio frequencies that can be handled by the device when it is used as an analog audio amplifier. After the power MOSFET, the IGBT was the power transistor used the second most frequently as of 2010.

What is a bipolar transistor, and how it works?

A bipolar junction transistor is a type of semiconductor device that has three terminals and is made up of two p-n junctions that are capable of amplifying or magnifying a signal. This type of transistor is known as a bipolar junction transistor. It is a device that is controlled by its corresponding current. The base, the collector, and the emitter are the three terminals connected to the BJT.

What are the benefits of insulated gate bipolar transistors (IGBTs) benefits in drives?

The insulated gate bipolar transistor device has an advantage over a BJT or MOSFET in that it provides a higher power gain than the standard bipolar type transistor in addition to the higher voltage operation and lower input losses that are characteristic of the MOSFET. This advantage is gained over the standard BJT.

What are the IGBT’s major benefits?

IGBTs have a number of advantages over Power MOSFETs and BJTs, the most significant of which are as follows: It has a very low on-state voltage drop as a result of conductivity modulation and it has greater on-state current density. As a result, it is feasible to manufacture chips with a more compact size and at a more affordable price.

The main disadvantage of IGBT

High reverse voltages are unable to be blocked by it. The switching frequency is lower than one would experience with a power MOSFET—the issue with the latch on the UPS. Because of the “current tail” in the turn-off characteristics, there is the potential for excessive power to be lost when the device is turned off.

Why is it called a bipolar transistor?

A field-effect transistor is a unipolar device, while a bipolar transistor gets its name because its operation uses both holes and electrons as charge carriers. A field-effect transistor is a unipolar device. When people merely refer to “transistors,” they may be referring to bipolar transistors. This is because the bipolar transistor was the first type of transistor ever invented.

What is the difference between a transistor and an IGBT?

It is a type of transistor known as an IGBT, and it is superior to a BJT in terms of efficiency due to its capacity to manage a significant amount of power and high switching speed. IGBTs have three terminals that are designated as the collector (C), emitter (E), and gate (G) (C). The IGBT incorporates characteristics of both the MOSFET and the BJT.

Conclusion

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