IRGP4063DPBF
Part Number: IRGP4063DPBF
Manufacturer: Infineon Technologies
Description: IGBT Transistors 600V UltraFast Trnch Appliance motion ap
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
ICRFQ.com - Electronic Components Distributor in China Since 2003
Part Number: IRGP4063DPBF
Manufacturer: Infineon Technologies
Description: IGBT Transistors 600V UltraFast Trnch Appliance motion ap
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
An insulated gate bipolar transistor with an ultrafast soft recovery diode, IRGP4063DPBF, can be found under part number IRGP4063DPBF. The collector current of an IRGP4063DPBF is 48A, while the voltage between the emitter and collector is 600V.
Physical | |
Case/Package | TO-247-3 |
Mount | Through Hole |
Number of Pins | 3 |
Weight | 38.000013 g |
Technical | |
Collector-Emitter Breakdown Voltage | 600 V |
Collector-Emitter Saturation Voltage | 2.14 V |
Collector-Emitter Voltage (VCEO) | 2.14 V |
Continuous Drain Current (ID) | 96 A |
Current Rating | 96 A |
Drain to Source Voltage (Vdss) | 300 V |
Element Configuration | Single |
Max Collector Current | 96 A |
Max Operating Temperature | 175 °C |
Max Power Dissipation | 330 W |
Min Operating Temperature | -55 °C |
Power Dissipation | 330 W |
Reverse Recovery Time | 115 ns |
Rise Time | 56 ns |
Schedule B | 8541290080 |
Turn-Off Delay Time | 145 ns |
Turn-On Delay Time | 60 ns |
Voltage Rating (DC) | 300 V |
Dimensions | |
Height | 20.3 mm |
Length | 15.875 mm |
Width | 5.3 mm |
Compliance | |
Lead-Free | Lead-Free |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS | Compliant |
The most typical application for an insulated-gate bipolar transistor, also referred to as an IGBT, is as an electronic switch. The ability to combine great efficiency with quick switching came along as technology advanced. Four alternating layers make up its structure, which is managed by a metal-oxide-semiconductor (MOS) gate mechanism. These layers are P-N-P-N in order.
IGBTs have a topologically identical structure to that of a thyristors with a “MOS” gate (also known as a MOS-gate thyristors). Still, the action of the thyristors is eliminated, leaving only the action of the transistor available across the full device’s operational range. It is utilized in high-power applications such as variable-frequency drives (VFDs), , arc-welding machines, electric automobiles, trains, variable-speed refrigerators lamp ballasts, induction hobs, and air conditioners switching power supply.
IGBTs are used in switching amplifiers in audio and industrial control systems because of their ability to produce complicated waveforms with pulse-width modulation and low-pass filters. This is since IGBTs are intended to flip on and off very quickly. When modern devices are used for switching applications, they feature pulse repetition rates that extend well into the ultrasonic-range frequencies. These frequencies are at least ten times higher than the audio frequencies that can be handled by the device when it is used as an analog audio amplifier. After the power MOSFET, the IGBT was the power transistor used the second most frequently as of 2010.
A bipolar junction transistor is a type of semiconductor device that has three terminals and is made up of two p-n junctions that are capable of amplifying or magnifying a signal. This type of transistor is known as a bipolar junction transistor. It is a device that is controlled by its corresponding current. The base, the collector, and the emitter are the three terminals connected to the BJT.
The insulated gate bipolar transistor device has an advantage over a BJT or MOSFET in that it provides a higher power gain than the standard bipolar type transistor in addition to the higher voltage operation and lower input losses that are characteristic of the MOSFET. This advantage is gained over the standard BJT.
IGBTs have a number of advantages over Power MOSFETs and BJTs, the most significant of which are as follows: It has a very low on-state voltage drop as a result of conductivity modulation and it has greater on-state current density. As a result, it is feasible to manufacture chips with a more compact size and at a more affordable price.
High reverse voltages are unable to be blocked by it. The switching frequency is lower than one would experience with a power MOSFET—the issue with the latch on the UPS. Because of the “current tail” in the turn-off characteristics, there is the potential for excessive power to be lost when the device is turned off.
A field-effect transistor is a unipolar device, while a bipolar transistor gets its name because its operation uses both holes and electrons as charge carriers. A field-effect transistor is a unipolar device. When people merely refer to “transistors,” they may be referring to bipolar transistors. This is because the bipolar transistor was the first type of transistor ever invented.
It is a type of transistor known as an IGBT, and it is superior to a BJT in terms of efficiency due to its capacity to manage a significant amount of power and high switching speed. IGBTs have three terminals that are designated as the collector (C), emitter (E), and gate (G) (C). The IGBT incorporates characteristics of both the MOSFET and the BJT.
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