IRLR3705Z
Part Number: IRLR3705Z
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
ICRFQ.com - Electronic Components Distributor in China Since 2003
Part Number: IRLR3705Z
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
Datasheet | IRLR3705Z datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors – FETs, MOSFETs – Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current – Continuous Drain (Id) @ 25°C | 42A (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Gate Charge (Qg) @ Vgs | 66nC @ 5V |
Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
Power – Max | 130W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak |
A powerful transistor specifically created for automotive purposes is the IRLR3705Z MOSFET. A continuous drain current of 42 A (Tc), a maximum drain-source voltage of 55 V, and a power dissipation of 130 W (Tc) are all things it can handle. This MOSFET’s exceptionally low on-resistance per silicon area, which enables it to handle high currents with minimal losses, makes it alluring for automotive applications. Also appropriate for high-temperature settings, the IRLR3705Z has a junction working temperature of up to 175°C. Additionally, it has an enhanced repeating avalanche rating and a quick switching speed, making it a dependable and effective device for a wide range of applications.
This HEXFET® Power MOSFET, created especially for automotive applications, uses cutting-edge manufacturing methods to deliver incredibly low on-resistance per silicon area. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in many applications, including automotive ones.
An N-channel MOSFET called the IRLR3705Z has a maximum drain-source voltage of 55 V and a constant drain current of 42 A (Tc). With a low on-resistance of 4.4m per silicon surface, it is very effective and can handle large currents with little loss. The MOSFET can function in high-power applications thanks to its 130W (Tc) power dissipation.
The IRLR3705Z’s gate charge, which is 63nC, is a crucial component. This value is vital for defining the MOSFET’s switching speed when constructing circuits that need quick switching. When building circuits, it’s also crucial to consider the MOSFET’s threshold voltage, which is normally between 1V and 2.5V. This value specifies the voltage level needed to switch the MOSFET on and off.
The IRLR3705Z can function in high-temperature situations thanks to its maximum junction temperature of 175°C. It can tolerate high-energy transients and is less prone to malfunction due to overvoltage or overcurrent circumstances due to its increased repetitive avalanche rating. The IRLR3705Z is a high-performance MOSFET with exceptional qualities for automotive and other high-power applications, all things considered.
The IRLR3705Z also boasts a low gate-source leakage current of 100nA at 25°C, which reduces power consumption and boosts circuit efficiency in addition to the previously mentioned benefits. Its highest threshold voltage of 4V ensures it functions correctly in various circuit designs.
The industry’s surface mount D-Pak container, a well-liked and often used package type, is how the IRLR3705Z is packaged. This package type enables simple integration and assembly into various circuit designs. In addition, the MOSFET is RoHS-compliant and lead-free, making it environmentally benign.
The IRLR3705Z ensures effective operation and low power dissipation with a maximum drain-source on-resistance of 5.2m at 10V gate-source voltage. The MOSFET’s performance in high-frequency applications is greatly influenced by its typical input capacitance of 600pF and its output capacitance of 90pF.
Overall, the high-performance MOSFET IRLR3705Z provides exceptional efficiency, dependability, and versatility for various applications, including automotive designs. It is a well-liked option for high-power applications due to its low on-resistance per silicon area, high-temperature working capabilities, and increased avalanche rating.
In many different applications, including power supplies, motor control, and switching circuits, the IRLR3705Z MOSFET is frequently utilized. It is especially well-suited for automotive applications, where effective power handling is crucial, because of its high current handling capacity and low on-resistance per silicon area.
For instance, the IRLR3705Z can be utilized in a motor control circuit, where the MOSFET can be used to turn on and off the motor. The circuit can achieve great efficiency and quick switching speeds by employing the MOSFET, leading to smooth and accurate motor control. Another instance is in a power supply circuit, where the MOSFET can control the flow of current and voltage to different components.
The IRLR3705Z can be utilized in various circuit designs for automotive applications, including power steering, battery management systems for electric vehicles, and other high-power automotive systems. The MOSFET can be used to regulate the charging and discharging of the battery pack in the battery management system of an electric car, ensuring that the battery runs effectively and securely.
The MOSFET in a power steering circuit can control the voltage and current flow to the power steering pump, resulting in the efficient and smooth operation of the pump. The IRLR3705Z can also be used in switching circuits to regulate how much current is sent to different automobile parts, like headlights and other high-power accessories.
All things considered, the IRLR3705Z MOSFET is a flexible and dependable part that is ideal for a wide range of applications, notably in the automotive sector. It is a well-liked option for high-power applications where effective power handling and reliability are crucial due to its low on-resistance per silicon area, high-temperature working capabilities, and increased avalanche rating.
The IRLR3705Z MOSFET excels in high-power applications due to its low on-resistance per silicon area, quick switching time, and increased repeating avalanche rating. Considering its drawbacks, such as potential temperature problems and the requirement to work within its maximum ratings, is crucial.
Finally, it should be noted that the IRLR3705Z MOSFET is a superb part that stands out for its great efficiency, dependability, and versatility. It is an excellent option for various circuits, including power supplies, motor control, and switching circuits. This is due to its impressively low on-resistance per silicon area, quick switching speed, and increased repeating avalanche rating. But it’s critical to consider the MOSFET’s constraints, including possible temperature problems and the necessity to operate within its maximum ratings.
All things considered, the IRLR3705Z is a crucial part of the automobile sector and other high-temperature applications where efficiency and dependability are crucial. For engineers and designers trying to improve the performance of their circuits, it is a favoured choice due to its distinctive properties. Contact ICRFQ, China’s top distributor of electronic components, if you require this or any other component. To assist you in choosing the ideal components for your needs, we have a huge assortment of high-quality components and provide great customer support.
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