Part Number: IXBH12N300

Manufacturer: IXYS

Description: IGBT 3000V 30A 160W TO247

Shipped from: Shenzhen/HK Warehouse

Stock Available: Check with us


Power electronics play a key part in a wide range of applications, from energy conversion to complex electronic systems, in today’s ever-changing technological landscape. The IXBH12N300, a high voltage, high gain BIMOSFETTM Monolithic Bipolar MOS Transistor, is a critical component that contributes to the efficiency and dependability of these systems. This comprehensive guide delves into the IXBH12N300’s characteristics, benefits, and applications, illuminating how this extraordinary device can help your projects.

Features of IXBH12N300: A High Voltage Power Transistor

The IXBH12N300 is a standout component in high-performance power electronics, featuring a variety of critical qualities that make it a worthwhile addition to a variety of applications. Let’s take a closer look at these features to see why the IXBH12N300 is a popular choice in the field of power transistors.

● High Blocking Voltage

The IXBH12N300’s extraordinary high blocking voltage capabilities is one of its distinguishing qualities. With a rating of 3000 V, this transistor can withstand high electrical potential without failing. This capability is critical in applications where voltage surges or fluctuations are common, ensuring the circuit’s safety and reliability.

● International Standard Packages

The IXBH12N300 is intended for international standard packages. This means it may be simply integrated into a wide range of circuits and systems, providing engineers and designers around the world with compatibility and ease of use. The availability of standard packages simplifies design and production procedures, making it an appealing option for a wide range of applications.

● Anti-Parallel Diode

The IXBH12N300’s built-in anti-parallel diode is a big advantage. When the transistor is turned off, this diode offers a safe path for current to travel, preventing reverse voltage spikes that could otherwise harm the circuit. The presence of this diode is a critical safety feature, making the IXBH12N300 a dependable choice for applications requiring voltage protection.

● Low Conduction Losses

The IXBH12N300 excels in efficiency, which is an important characteristic of any power electronics component. It has low conduction losses, which means that while the transistor is in the “on” state, it wastes less energy and generates less heat. This capability is especially useful in situations where energy efficiency is crucial, such as power supply and high-power systems.

Finally, the IXBH12N300 is a high voltage power transistor with a slew of amazing features. Because of its high blocking voltage, compliance with worldwide standard packaging, anti-parallel diode, and low conduction losses, it is an excellent choice for applications requiring high power handling, reliability, and efficiency. The IXBH12N300’s features ensure that it plays a critical part in reaching the appropriate performance and safety levels, whether you’re designing power supplies, UPS systems, laser generators, or any other high-voltage application.

Advantages of IXBH12N300: A Power Transistor with a Difference

The IXBH12N300 stands as a remarkable power transistor, offering not only a host of impressive features but also distinct advantages that set it apart from the competition. These two standout advantages, in particular, make the IXBH12N300 an invaluable component for a wide range of high-voltage applications.

Minimum Gate Drive Requirement

  • The IXBH12N300 has an extremely low gate drive need, which is one of its most significant features. When compared to many other high-voltage transistors, the gate drive voltage and current required to switch this transistor on or off are negligible. This minimal gate drive need simplifies control circuitry and reduces power consumption.
  • This advantage leads into simpler and more cost-effective design options for engineers and designers. The IXBH12N300 helps to the overall efficiency and cost-effectiveness of the application by lowering the complexity of gate driver circuits and minimizing power consumption. This capability is especially useful in applications where power conservation and cost control are concerns.

High Density of Power

  • Power density is an important consideration in modern electronic systems, particularly when dealing with high-power applications. The IXBH12N300 excels in this area, providing a high-power density in a small package. It can easily manage high voltage and current levels, making it a good choice for situations where space is limited and power output must be maximized.
  • The combination of the transistor’s high blocking voltage, low conduction losses, and efficient design resulted in this high-power density. The IXBH12N300’s high power density assures that it can handle your power requirements while retaining a tiny footprint, whether you’re constructing compact power supplies, high-power amplifiers, or high-frequency circuits.

To summarize, the IXBH12N300 is more than just another high-voltage power transistor; it has particular advantages that address the unique requirements of current power electronics. Its low gate drive demand simplifies design and lowers running costs, and its high power density enables efficient power handling in small places. Engineers and designers may optimize their systems for improved performance and cost savings by exploiting these benefits, making the IXBH12N300 a critical component in high-voltage applications where efficiency and space utilization are critical.

Applications of IXBH12N300

Switched-Mode and Resonant-Mode Power Supplies

  • The IXBH12N300 is an excellent choice for modern power supply designs due to its high voltage handling capability, low conduction losses, and low gate drive requirement.
  • It allows for the effective conversion of electrical energy, reducing heat generation and power waste.

Uninterruptible Power Supplies (UPS):

  • The reliability and efficiency of UPS systems are critical.
  • The high blocking voltage of the IXBH12N300 guarantees powerful protection against power fluctuations, while the low conduction losses contribute to energy-efficient operation, making it a key component in UPS units.

Laser Generators:

  • Laser technology is dependent on accurate and steady power delivery. The IXBH12N300 can be used to manage and modulate laser generator power supplies, delivering stable and accurate laser outputs.

Capacitor-Discharge Circuits

  • High voltage and current handling components are frequently required in capacitor-discharge circuits. The high voltage capability and low conduction losses of the IXBH12N300 are perfect for such applications, ensuring rapid and efficient energy discharge.

AC Switches

  • The IXBH12N300’s high blocking voltage, low conduction losses, and low gate drive demand make it a good solution for efficient AC switching in systems that require high voltage AC switching, such as motor control and heating applications.

In Conclusion

The IXBH12N300 is a high-performance BIMOSFETTM Monolithic Bipolar MOS Transistor with outstanding characteristics and benefits. It’s a flexible component in applications ranging from power supply to laser technology, thanks to its high voltage handling, low conduction losses, and low gate drive needs.

As technology advances, so does the demand for high-performance components like the IXBH12N300. By incorporating it into your designs, you can improve power density, efficiency, and reliability, all of which contribute to project success. The IXBH12N300 is a dependable choice for switched-mode power supply, laser generators, UPS systems, and other high-voltage, high-gain applications.

Connect with us at ICRFQ, a major electronic component distributor based in China that offers superior products at low costs, to learn more about the IXBH12N300’s possibilities.

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