Part Number: IXDI604SIATR

Manufacturer: IXYS Integrated Circuits Division


Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of IXDI604SIATR

Datasheet  IXDI604SIATR datasheet
Category Integrated Circuits (ICs)
Family PMIC – Gate Drivers
Manufacturer IXYS Integrated Circuits Division
Packaging Tape & Reel (TR)
Part Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel, P-Channel MOSFET
Voltage – Supply 4.5 V ~ 35 V
Logic Voltage – VIL, VIH 0.8V, 3V
Current – Peak Output (Source, Sink) 4A, 4A
Input Type Inverting
High Side Voltage – Max (Bootstrap)
Rise / Fall Time (Typ) 9ns, 8ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154″, 3.90mm Width)
Supplier Device Package 8-SOIC


“Unleash the Power: Meet the IXDI604SIATR, the dual high-speed gate driver that sets the standard for driving MOSFETs and IGBTs like never before! With lightning-fast switching, immunity to latch-up, and matchless 4A current handling, this little powerhouse is the secret sauce behind high-frequency and high-power applications. Get ready to revolutionize your projects with the IXDI604SIATR, where precision meets performance!”

Understanding the IXDI604SIATR Family

The IXDI604SIATR is a gate driver in the IXD_604 family. This family has four different types: the IXDD604, which is a dual non-inverting driver with an enable pin; the IXDN604, which is also a dual non-inverting driver; the IXDI604, which is a dual inverting driver; and the IXDF604, which has one inverting driver and one non-inverting driver. These drivers come in different forms, such as the 8-pin SOIC (SIA), the standard 8-pin DIP (PI), the 8-pin Power SOIC with an exposed metal back (SI), and the 8-pin DFN (D2) package.

IXDI604SIATR Key Features and Advantages

Key Features and Advantages of IXDI604SIATR: Unleashing the Power of Precision

The IXDI604SIATR is a dual high-speed gate driver that packs a punch with its exceptional features, making it a top-notch choice for driving the latest IXYS MOSFETs and IGBTs. Let’s delve into its key features and advantages that set it apart from the rest:

● High-Speed Performance

The IXDI604SIATR has voltage rise and fall times of less than 10 ns, which means that MOSFETs and IGBTs can switch quickly and accurately. This high-speed performance means less switching losses, better efficiency, and less electromagnetic interference (EMI).

● 4A Current Sourcing and Sinking:

The IXDI604SIATR has two ports, and each one can source or sink 4 A of current. Because the driver can handle a lot of current, it can easily handle high-power applications and control power devices in a safe and efficient way.

● Latch-Up Immunity

The IXDI604SIATR has an input that doesn’t latch very often. This means that it stays stable and strong even when working in difficult conditions. This makes sure that the gate driver works all the time and reliably.

● Proprietary Circuitry for Cross-Conduction Elimination:

With its own circuits, the IXDI604SIATR stops cross-conduction and current “shoot-through.” This important feature stops the high-side and low-side MOSFETs, or IGBTs, from conducting at the same time. This reduces the chance of hurting the devices and makes the system more reliable as a whole.

● Low Propagation Delay

The gate driver has a short propagation delay, which is important for switching multiple power devices at the same time in high-frequency applications. This quality helps lower switching losses and improve the efficiency of the system.

● Perfectly Matched Rise and Fall Times:

The IXDI604SIATR makes sure that the rise and fall times are the same and that the switching traits are balanced. This matching is a key part of reducing voltage spikes and current overshoot, which further improves the stability and durability of the system.

● Ideal for High-Frequency Applications

The IXDI604SIATR is made for high-frequency applications because it works quickly, has a short propagation delay, and has rise and fall times that are the same. It works best in high-power systems where switching must be done quickly and accurately.

With its unique features and benefits, the IXDI604SIATR gives designers and engineers the power to push the limits of power electronics. This dual high-speed gate driver takes performance to the next level, whether it’s used to drive high-power motors, handle power transformers, or power induction heating systems. With the IXDI604SIATR by your side, you can say hello to speed, dependability, and accuracy.

IXDI604SIATR Applications

Applications for the IXDI604SIATR include numerous high-power and high-frequency systems, such as:

  • Motor Drives: In motor drive applications, the gate driver excels at controlling the switching of MOSFETs and IGBTs, delivering effective and precise control of the motor’s speed and torque.
  • Power Inverters: The IXDI604SIATR ensures smooth conversion of DC and AC power in power inverters, making it possible to use uninterruptible power supplies (UPS) and renewable energy systems.
  • Switched-Mode Power Supplies (SMPS): For effective power conversion, SMPS frequently need high-speed switching, which the IXDI604SIATR successfully satisfies.
  • Induction Heating: This gate driver’s high-frequency characteristics make it appropriate for induction heating systems, where quick and precise power delivery is crucial.
  • Electric Vehicles (EVs): EV motor control and battery management require advanced power electronics, which makes the IXDI604SIATR a desirable option for EV applications.

Design Considerations for IXDI604SIATR: Ensuring Optimal Performance

Integrating the IXDI604SIATR into your power electronics project requires careful attention to certain design considerations. To maximize the benefits of this dual high-speed gate driver and ensure optimal performance, keep the following factors in mind:

PCB Layout

  • Because they can slow down switching and create ringing, parasitic capacitance, and inductance should be kept to a minimum while designing the PCB.
  • To shorten trace lengths and reduce loop areas, place crucial components like the IXDI604SIATR and power devices as close together as you can.
  • To increase noise immunity and lessen interference, use a multi-layer PCB with dedicated ground and power planes.

Gate Driver Placement

  • To reduce switching losses and gate loop inductance, place the IXDI604SIATR next to the MOSFETs or IGBTs it will drive.
  • To enable quick and effective gate charging and discharging, keep gate traces short and wide to reduce resistance and inductance.


  • To provide steady power distribution and lessen voltage fluctuations during switching events, place high-quality decoupling capacitors close to the IXDI604SIATR’s power supply pins.
  • For efficient noise filtering, use capacitors with low equivalent series resistance (ESR) and equivalent series inductance (ESL).

Thermal Management:

  • When operating, the IXDI604SIATR can produce heat, especially when driving large currents. Use the proper heat sinks or thermal vias to ensure effective heat dissipation.
  • To avoid damage from high heat, keep an eye on the working temperature and think about installing thermal protection systems.

Gate Resistors

  • Put gate resistors in series with the outputs of the gate driver to reduce ringing and the possibility of parasitic oscillations.
  • Depending on the MOSFETs or IGBTs being driven and the desired switching speed, choose the right gate resistor values.

Grounding and Ground Loops:

  • Establish a low-impedance ground connection for the gate driver and power devices and implement a solid ground plane.
  • Take precautions to lessen the effects of any potential ground loops that may result in noise and interference problems.

Protection Circuits:

  • To protect the gate driver and power components from severe strain or malfunctions, think about incorporating safety circuits such as overcurrent protection, overvoltage protection, and under-voltage lockout.

Signal Isolation:

  • Utilize signal isolation techniques to shield the gate driver from outside interference and improve safety in situations with high voltage or loud surroundings.


The IXYS IXDI604SIATR is a high-performance, dual-high-speed gate driver that is well-suited for driving state-of-the-art MOSFETs and IGBTs. It’s ideal for high-power and high-frequency uses thanks to its amazing qualities like fast operation, high current-handling capability, latch-up immunity, and lack of cross-conduction.

Motor drives, power inverters, SMPS, induction heating systems, and electric cars can all benefit from the IXDI604SIATR’s precision and reliability. If you’re working on a power electronics project and want to increase efficiency, decrease switching losses, and boost overall system performance, consider using this gate driver. Get yours from ICRFQ now to give your embedded projects access to new levels of efficiency, creativity, and potential.

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Kevin Chen