IXFP6N120P MOSFET

Technical Specifications of IXFP6N120P

Datasheet	IXFP6N120P datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	IXYS
Series	HiPerFET?, PolarP2?
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current – Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	2.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) @ Vgs	92nC @ 10V
Input Capacitance (Ciss) @ Vds	2830pF @ 25V
Power – Max	250W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

IXFP6N120P Introduction

The IXFP6N120P is a specialized N-Channel power MOSFET that is designed to meet the requirements of high-voltage and high-power applications. The device is both robust and efficient, providing exceptional performance and reliability in demanding power switching scenarios. With a voltage rating of 1200 V and a continuous current rating of 6 A (Tc), this device possesses the necessary capabilities to effectively handle high-power requirements. The IXFP6N120P comes in a TO-220-3 through-hole package, which allows for easy and secure mounting on printed circuit boards (PCBs). The IXFP6N120P is an excellent choice for applications that require efficient and reliable high-power switching, such as power supplies, motor drives, and switching circuits.

The IXFP6N120P is a highly efficient N-Channel power MOSFET specifically designed for high-voltage and high-power applications, providing exceptional power switching capabilities. This device offers outstanding performance and reliability due to its impressive voltage, current, and power handling capabilities.

IXFP6N120P Key Features

The IXFP6N120P has a high voltage rating of 1200 V, making it suitable for handling high-voltage applications effortlessly. This feature makes it highly suitable for power systems that need to handle voltage fluctuations effectively.

The IXFP6N120P is capable of handling high currents with its continuous current rating of 6 A (Tc). This makes it a suitable choice for power applications that require substantial current handling.

The IXFP6N120P is specifically designed to handle power dissipation of up to 250 W (Tc), making it highly reliable for use in high-power scenarios. The device’s robust power handling capabilities allow it to effectively meet the requirements of power-intensive applications.

Performance Characteristics

The IXFP6N120P is known for its efficient power switching capabilities due to its low on-resistance (RDS (on)). This characteristic helps minimize power loss when the device is conducting. The efficiency of the system contributes to its overall performance and helps minimize energy waste.

The device provides fast switching speed, allowing for rapid and efficient transitions between the on and off states. The fast switching speed of this technology helps to minimize switching losses and improve the overall efficiency of the system.

The IXFP6N120P is equipped with a high avalanche energy rating, guaranteeing its capability to endure voltage spikes or transients without compromising its performance or reliability. This particular characteristic greatly improves the device’s durability when used in power-intensive applications.

The MOSFET is designed to have a low gate charge, which enables efficient and effective control of the switching process. As a result, there is a decrease in switching losses and an enhancement in the overall efficiency of the system.

IXFP6N120P Application Areas

The IXFP6N120P is used in a wide range of high-voltage and high-power situations, which include, but are not limited to:

• Power Supplies: This component is ideal for power supply systems, specifically AC-DC converters and DC-DC converters, as it excels in efficient power switching and high-voltage handling.
• Motor Drives: This device is suitable for use in various motor drive applications, such as industrial machinery, robotics, and electric vehicles. The high voltage and current ratings of this device allow for efficient control and management of motor power.

The IXFP6N120P is a suitable choice for high-power switching circuits, which are commonly utilized in industrial control systems and high-voltage DC transmission applications. With its robust power handling capabilities, it is an ideal choice for such applications.

The IXFP6N120P is a crucial component in renewable energy systems such as solar inverters and wind turbine converters. It plays a significant role in ensuring efficient power conversion and management thanks to its impressive high-voltage and high-power capabilities.

The IXFP6N120P is a highly reliable and efficient power switching device that excels in handling high voltage, current, and power. The impressive performance characteristics and wide range of applications make it the preferred choice for high-voltage and high-power applications. These applications require efficient power control and reliable operation, making it a critical option.

IXFP6N120P Key Features

The IXFP6N120P is designed with an N-Channel configuration, enabling efficient power switching in high-voltage applications. The N-Channel design provides better performance and lower on-resistance when compared to P-Channel devices.

The IXFP6N120P is capable of handling high-voltage applications effortlessly, thanks to its voltage rating of 1200 V.The high-voltage capability of this device makes it well-suited for use in power systems and circuits that need to operate reliably at higher voltages.

The IXFP6N120P has a high current capability, with a continuous current rating of 6 A (Tc). This allows it to effectively handle high currents. This feature is ideal for applications that need to handle strong currents effectively, such as motor drives and high-power switching circuits.

The IXFP6N120P is specifically designed to effectively handle power dissipation of up to 250 W (TC). The high power handling capability of this device enables it to operate reliably in applications that have demanding power requirements. This ensures efficient power delivery and minimizes the risk of device failure.

The IXFP6N120P is available in a through-hole TO-220-3 package. This particular package type provides a convenient and secure method of mounting on PCBs, which simplifies the process of integrating the device into different electronic systems. The through-hole design offers both mechanical stability and efficient heat dissipation.

The IXFP6N120P offers reliable and efficient power switching performance in high-voltage and high-power applications by incorporating these key features. The N-Channel configuration, high voltage rating, high current capability, high power handling, and through-hole package of this component make it an excellent choice for demanding power electronics designs. It is versatile and reliable, offering a wide range of applications.

Performance Characteristics

The IXFP6N120P is characterized by its low on-resistance (RDS (on)). This refers to the resistance between the drain and source when the MOSFET is fully conducting. A low RDS (on) value reduces conduction losses when switching power, resulting in improved efficiency and less heat generation.

The IXFP6N120P demonstrates fast switching speed as it has low switching times between the on and off states. The fast switching speed of this device minimizes the time it spends in its intermediate state, resulting in reduced switching losses and improved efficiency in power conversion applications.

The IXFP6N120P is equipped with a high avalanche energy rating, which means it is specifically designed to endure high-energy transients and voltage spikes without sustaining any damage. This feature enhances the durability and dependability of the MOSFET in situations where there might be sporadic occurrences of high-voltage events, such as when dealing with inductive load switching or reactive power circuits.

The IXFP6N120P is equipped with a low gate charge. This term refers to the minimal amount of charge needed to transition the MOSFET from its off-state to its on-state. A low gate charge has the benefit of reducing switching time and minimizing power dissipation in the driving circuitry. This ultimately leads to improved efficiency and reduced power losses.

The IXFP6N120P exhibits a range of performance characteristics that enhance its reliability and efficiency as a power MOSFET in high-voltage and high-power applications. The device’s excellent power handling capabilities, efficient power switching, robust operation, and superior performance in demanding power electronics applications are a result of its low on-resistance, fast switching speed, high avalanche energy rating, and low gate charge. The IXFP6N120P is a reliable and efficient power MOSFET that exhibits exceptional performance characteristics in various applications such as power supplies, motor drives, and switching circuits.

Conclusion

In conclusion, the IXFP6N120P represents an exceptional power MOSFET tailored for high-voltage and high-power applications. Its impressive array of features, performance characteristics, diverse application areas, and associated benefits make it the optimal choice for efficient power switching, reliability, and ease of use. For more information or to order this device, we recommend contacting ICRFQ, the leading electronic component distributor in China. Discover the immense potential of the IXFP6N120P and embark on a journey towards achieving unrivaled performance, unwavering reliability, and empowered power control in your applications.

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