Part Number: IXTA26P20P

Manufacturer: IXYS

Description: MOSFET P-CH 200V 26A TO263

Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of IXTA26P20P

Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer IXYS
Series PolarP?
Packaging Tube
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current – Continuous Drain (Id) @ 25°C 26A (Tc)
Rds On (Max) @ Id, Vgs 170 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) @ Vds 2740pF @ 25V
Power – Max 300W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (IXTA)


The IXTA26P20P is a P-channel power MOSFET that boasts high performance and is suitable for a range of applications such as power supplies, motor control, and power management circuits. The purpose of this guide is to offer in-depth information about the IXTA26P20P, including its specifications, features, and possible uses.

Description of the IXTA26P20P and Its Key Features

The IXTA26P20P is a P-channel MOSFET that is specifically designed for high-performance applications. These are the main features:

  • Voltage rating for drain-source (Vds): The IXTA26P20P is capable of handling a maximum voltage of 200 volts, which makes it a suitable choice for power applications that involve high voltage levels.
  • The device’s continuous drain current (Id) is impressive, with a rating of 26 A (Tc). This indicates that it can withstand substantial current flow without sustaining damage.
  • The IXTA26P20P has a power dissipation rating of 300 W (Tc), which allows it to efficiently dissipate heat produced during operation. This ensures that the device performs reliably.
  • The MOSFET features a low on-state resistance (Rds(on)) that helps reduce power losses and enhance the overall efficiency of the circuit.
  • The gate-source voltage (Vgs) threshold is a crucial factor in ensuring reliable switching characteristics through proper gate control. It is defined by specific threshold voltage levels.

TO-263AA surface mount package and its advantages

The IXTA26P20P is available in a surface-mount package called TO-263AA, which is also referred to as D2PAK or DPAK. This package provides various benefits, such as:

  • The TO-263AA package is specifically designed for surface mount technology (SMT), enabling efficient and automated assembly processes. This results in significant time savings and reduced production costs.
  • The package is designed with a large metal tab that offers a pathway with low thermal resistance for efficient heat dissipation, resulting in excellent thermal performance. This facilitates efficient heat transfer from the MOSFET to the PCB, thereby improving the overall thermal performance.
  • The TO-263AA package provides exceptional mechanical durability and safeguards the MOSFET, enhancing its ability to withstand mechanical strain, vibration, and other environmental elements.
  • The package is designed to have a small footprint, which makes it ideal for situations where there is limited board space.
  • The TO-263AA package is a widely used and standardized component that ensures compatibility with various circuit designs and manufacturing processes.

The IXTA26P20P, which comes in the TO-263AA package, offers excellent performance features and convenient packaging. As a result, it is an ideal choice for power management applications that require high performance.


● Voltage rating (Vds): 200V

The maximum voltage that can be applied across the drain and source terminals of the MOSFET is specified by the voltage rating (Vds) of the IXTA26P20P. The IXTA26P20P is capable of handling a maximum voltage of 200 volts.This indicates that the MOSFET can operate securely within this voltage range without malfunctioning.

By damaging the MOSFET catastrophically, exceeding the maximum voltage rating can harm the component or the circuit it is employed in. To preserve the dependability and durability of the MOSFET, it is crucial to make sure that the voltage across the drain and source terminals does not go beyond this predetermined threshold.

● Continuous drain current (Id): 26 A (Tc)

The IXTA26P20P’s continuous drain current (ID) specification lists the maximum current that can continuously pass through the drain terminal of the MOSFET. The maximum continuous drain current for the IXTA26P20P is 26 A under a case temperature (Tc) condition.

The MOSFET’s capacity to handle current is determined by this standard, which specifies the highest current that the device can reliably handle without overheating or going beyond its thermal limits. To avoid device failure or thermal damage, it is essential to make sure that the current passing through the MOSFET stays within this set limit.

● Power dissipation (Pd): 300 W (Tc)

The IXTA26P20P’s power dissipation (Pd) specification describes how well it can dissipate heat produced during operation. Under particular case temperature (Tc) settings, it provides the maximum power that the MOSFET can tolerate without going over its thermal limits. The maximum power dissipation for the IXTA26P20P is 300 W at the given Tc condition.

The MOSFET must be able to dissipate enough power to operate consistently and avoid thermal damage. To make sure that the power dissipation stays within the predetermined limitations, proper heat sinking, thermal management strategies, and adherence to the advised operating conditions are crucial.

● Gate-source voltage (Vgs) threshold and maximum ratings

The minimum voltage necessary to turn on the MOSFET and create a conducting route between the drain and source terminals is known as the gate-source voltage (Vgs) threshold. It is a crucial variable for effective gate control.

Specific threshold voltage ratings for the IXTA26P20P will be listed in the datasheet. P-channel MOSFETs typically have threshold voltages in the range of -2 volts to -4 volts, which means that a negative voltage is needed to turn the MOSFET on.

Additionally, in order to protect the MOSFET, the datasheet will include maximum gate-source voltage ratings (Vgs (max)) that cannot be exceeded. In order to avoid gate oxide breakdown or other gate-related issues, it is crucial to abide by these ratings.

● On-state resistance (Rds(on)) and its impact on conduction losses

The key characteristic known as the on-state resistance (Rds(on)) describes the resistance of the MOSFET when it is in the fully conducting condition. It specifies the conduction losses that occur during operation and is commonly given in milliohms (m).

Application Areas

● Power supplies

The IXTA26P20P’s low on-state resistance (Rds(on)) and excellent efficiency make it perfect for power supply designs, such as buck converters and synchronous rectification circuits.

● Motor control

It is frequently used in motor drives and controllers, enabling accurate current management and effective switching for motor applications, including brushed DC motors and other types of motors.

● Power management circuits

In order to provide effective power management and conversion, the IXTA26P20P is a critical component in voltage regulator modules (VRMs), battery charging circuits, and DC-DC converters.

● Other applications

The use of MOSFETs in lighting systems, audio amplifiers, switching circuits, and automotive electronics demonstrates their adaptability in various electronic systems.


In short, the IXTA26P20P MOSFET is an important part of power electronics because it can handle high voltages and currents, dissipate power well, and have low on-state resistance. It improves the performance, efficiency, and reliability of many electrical systems because it can be used in power supplies, motor control, and power management circuits.

At ICRFQ, our goal is to help you get the most out of your IXTA26P20P MOSFET. Contact us today to work together on building safe and reliable solutions for your most important systems that take advantage of the IXTA26P20P MOSFET’s strength and adaptability.

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