IXTA3N120 MOSFET

Technical Specifications of IXTA3N120

Datasheet	IXTA3N120 datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	IXYS
Series	–
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current – Continuous Drain (Id) @ 25°C	3A (Tc)
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Gate Charge (Qg) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power – Max	200W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263 (IXTA)

IXTA3N120-TRL Introduction

The IXTA3N120 is a high-performance N-channel power MOSFET that has great voltage and current ratings. This makes it perfect for a wide range of power applications. It can handle a lot of power because it can handle voltages up to 1200 V and currents up to 3 A (Tc). The device comes in a surface-mount TO-263AA package, which makes it easy to add to different kinds of circuits.

The IXTA3N120 is made to have high-performance switching and efficient power management. Engineers and designers who want reliable power MOSFET options often choose it because of its advanced features and small size.

In the sections that follow, we’ll go into more detail about the IXTA3N120’s key features, applications, electrical and thermal characteristics, circuit design considerations, mounting and handling instructions, troubleshooting tips, and commonly asked questions. This full guide is meant to give you all the information you need to use this N-channel power MOSFET in your projects.

IXTA3N120-TRL Product Overview

The IXTA3N120 is a power MOSFET with an N-channel that is made for high-power uses. Its main job is to make power control and switching in different electronic systems more efficient. With a voltage rating of 1200 V and a current rating of 3 A (Tc), the IXTA3N120 can handle a lot of power. This makes it a good choice for applications that require a lot of power.

One of the best things about the IXTA3N120 is that it can handle high power. It can handle high voltage levels up to 1200 V, which makes it a good choice for applications that need a high breakdown voltage. This function makes sure the device works well and helps protect it and the circuitry around it from voltage spikes and drops.

The IXTA3N120 can also handle large current flows because it has a current value of 3 A (Tc). This makes it good for things like power supplies, motor control, lighting systems, and industrial automation that need to switch and handle power efficiently.

Also, the IXTA3N120 has a power discharge capacity (Tc) of 200 W. This lets heat escape well, so the device can handle high amounts of power without getting too hot. The device is more likely to work well and last longer if it can get rid of heat quickly.

Engineers and creators can take advantage of the IXTA3N120’s key features by using it in different ways. Among these benefits are:

• Increased Efficiency: The IXTA3N120’s low on-resistance keeps power losses to a minimum. This makes it easier to control power and generates less heat.
• Robust Power Handling: The IXTA3N120 can handle high power levels because its voltage and current ratings are high. This makes it a good choice for applications that need a lot of power.
• Reliable Performance: The IXTA3N120’s high breakdown voltage and sturdy design make it work reliably even in tough situations, which increases the system’s reliability.
• Fast Switching Speed: The IXTA3N120 has fast switching speeds, which make it easy to switch and control power in applications that need to react quickly.

Overall, the IXTA3N120 is a safe and efficient way to handle switching and power management. Its high voltage and current ratings, as well as its ability to dissipate power, make it a great choice for a wide range of electrical systems that need to handle a lot of power and work reliably.

IXTA3N120-TRL Key Features and Benefits

● Low On-Resistance

When the MOSFET is fully turned on, there should be very little resistance between the drain and source terminals. This is the case with the IXTA3N120. Power management applications are more effective and experience less power loss when the on-resistance is low. It makes it possible for the MOSFET to manage large currents with little voltage loss, which reduces heat generation and boosts overall system effectiveness.

● Rapid Switching Speed

The IXTA3N120 has rapid switching properties that make power switching quick and effective. Rapid response times are made possible by its quick turn-on and turn-off timings in applications that need precise control and quick switching transitions. This capability is especially helpful in applications like motor control and switching power supplies, where quick switching and effective power conversion are critical.

● High Breakdown Voltage

The IXTA3N120 is rated at 1200 V for a high breakdown voltage. The MOSFET can endure high voltage levels because of its high voltage capacity, protecting against voltage transients and guaranteeing dependable performance in applications with strict voltage requirements. The resilience of the device is ensured by the high breakdown voltage, which also serves to protect the integrity of the entire system.

Benefits

● Enhanced Efficiency

The IXTA3N120 operates with less power loss due to its low on-resistance. As a result, less power is lost as heat, leading to increased efficiency in power management applications. Reduced energy usage, increased system performance, and lower operating costs are the results of increased efficiency.

● Reduced Power Losses

The IXTA3N120’s low on-resistance and quick switching rate help to reduce power losses in both the MOSFET and the circuitry around it. The MOSFET helps to optimize energy use and minimize needless heat creation by reducing power losses. As a result, the system becomes more reliable and operates more efficiently overall.

● Enhanced Overall Performance

The IXTA3N120’s low on-resistance, quick switching time, and high breakdown voltage improve power management and switching applications’ overall performance. It enables effective power management, exact control, and dependable performance in challenging settings. The high-performance properties of the MOSFET help to increase system dependability, decrease power dissipation, and improve system response.

Overall, the IXTA3N120’s low on-resistance, quick switching time, and high breakdown voltage provide a number of advantages, such as increased effectiveness, decreased power losses, and better overall performance. For a variety of power management and switching applications where high voltage handling, quick switching, and optimal power conversion are essential, the IXTA3N120 is a dependable and efficient option thanks to these qualities.

Applications

The IXTA3N120 MOSFET is a versatile component that can be used in a wide range of applications due to its N-channel power capabilities. This product is suitable for a variety of applications such as power supplies, motor control, lighting systems, renewable energy systems, industrial automation, and high-power applications.

Some specific examples are:

• There are three types of power supplies: AC-DC converters, DC-DC converters, and switched-mode power supplies.
• The topic of discussion is motor control, which includes motor drives, robotics, and electric vehicle systems.
• This text discusses lighting systems, specifically LED drivers and lighting control systems.
• Renewable energy systems include solar inverters and wind turbine converters.
• Industrial automation involves the use of motor drives, programmable logic controllers (PLCs), and industrial control systems.
• High-power applications include welding equipment, high-power amplifiers, and converters.

The IXTA3N120 is a reliable and efficient choice for these applications due to its high voltage and current ratings, low on-resistance, and fast switching speed. This technology offers accurate management, effective energy transformation, and dependable performance even in challenging conditions.

Conclusion

The IXTA3N120 is a versatile and high-performance power MOSFET with low on-resistance, fast switching speed, and a high breakdown voltage. It offers improved efficiency, reduced power losses, and enhanced overall performance in various applications. Engineers and designers can harness its benefits for optimized power management and efficient switching. For further assistance and procurement options, contact our technical support team or authorized distributors. Unlock the potential of your designs with the reliable and efficient IXTA3N120 power MOSFET. ICRFQ is dedicated to assisting you in utilizing its complete capabilities. Contact us today to collaborate and develop secure and dependable solutions for your critical systems using the robustness and versatility of the IXTA3N120.

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