MMBF170LT1G MOSFET

Technical Specifications of MMBF170LT1G

Datasheet	MMBF170LT1G datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	ON Semiconductor
Series	–
Packaging	Digi-Reel?
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current – Continuous Drain (Id) @ 25°C	500mA (Ta)
Rds On (Max) @ Id, Vgs	5 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) @ Vgs	–
Input Capacitance (Ciss) @ Vds	60pF @ 10V
Power – Max	225mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

MMBF170LT1G Introduction

The MMBF170LT1G is an N-Channel MOSFET transistor widely used in electronic circuits for various applications. This comprehensive guide provides an overview of the MMBF170LT1G, including its specifications, features, and common uses. Whether you’re a hobbyist or a professional, this guide will help you understand and utilize the MMBF170LT1G effectively.

Introduction to MOSFET Transistors

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor widely used in electronic circuits for various applications. It is a three-terminal device that consists of a gate, source, and drain. MOSFETs are known for their ability to control and amplify electrical signals with low power consumption.

Explanation of N-Channel MOSFETs and their characteristics: N-Channel MOSFETs are a subtype of MOSFETs that use a negative charge carrier (electrons) in the channel between the source and drain terminals. They are commonly used in applications where low-side switching is required, such as in power supplies, motor control circuits, and amplifiers.

The key characteristics of N-Channel MOSFETs include

• Voltage Rating (BVDSS): This specifies the maximum voltage the transistor can withstand between the drain and source terminals without breakdown.
• Current Rating (ID): It indicates the maximum current that can flow through the transistor under specified conditions.
• On-Resistance (RDS(ON)): This parameter represents the resistance between the drain and source terminals when the transistor is fully turned on. Lower RDS(ON) values indicate better conductivity and reduced power losses.
• Threshold Voltage (Vth): It is the gate-source voltage at which the transistor starts conducting. It determines the voltage level required to control the transistor’s on/off state.

Brief Introduction to the MMBF170LT1G: The MMBF170LT1G is a specific N-Channel MOSFET transistor model manufactured by ON Semiconductor. It is designed for low-power applications that require efficient switching and amplification. The MMBF170LT1G comes in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs.

With a voltage rating of 60V and a current rating of 500mA, the MMBF170LT1G can handle a range of small to moderate power requirements. Its low on-resistance (RDS(ON)) ensures minimal power dissipation and efficient operation. This transistor also features fast switching characteristics, making it suitable for high-frequency circuits.

The MMBF170LT1G is commonly used in various applications such as power supplies, motor control circuits, audio amplification, and LED lighting applications. Its small package size, combined with its performance characteristics, makes it a popular choice among engineers and circuit designers.

Electrical Characteristics

Threshold voltage (Vth) and its significance

The threshold voltage (Vth) of a MOSFET transistor is the gate-source voltage at which the transistor starts conducting and allowing current to flow from the source to the drain. It is an important parameter because it determines the voltage level required to control the transistor’s on/off state.

When the gate voltage (VGS) is below the threshold voltage (Vth), the MOSFET is in the off state, and no significant current flows through the channel. Once the gate voltage exceeds Vth, the transistor enters the on state, and the channel starts to conduct current. Therefore, Vth plays a crucial role in determining the MOSFET’s control and switching behavior.

Drain-Source Breakdown Voltage (BVDSS): The drain-source breakdown voltage (BVDSS) is the maximum voltage that can be applied between the drain and source terminals of the MOSFET without causing breakdown or irreversible damage to the transistor. It represents the transistor’s ability to withstand high voltage levels without failing.

BVDSS is an important parameter, especially in applications where the MOSFET may experience voltage spikes or high voltage environments. Choosing a MOSFET with a BVDSS rating higher than the expected voltage levels ensures reliable and safe operation.

Drain Current and On-Resistance (RDS(ON)): Drain current (ID) is the current flowing from the drain to the source terminals when the MOSFET is in the on state. It depends on the gate voltage (VGS) and other external factors such as the load connected to the transistor.

On-resistance (RDS(ON)) is the resistance between the drain and source terminals when the MOSFET is fully turned on. It determines the power dissipation and efficiency of the transistor. A lower RDS(ON) value indicates better conductivity and reduced power losses. MOSFETs with lower RDS(ON) are desirable for high-current applications as they minimize voltage drops across the transistor.

Capacitances and Switching Characteristics: MOSFET transistors have capacitances associated with their structure, which affect their switching characteristics. The key capacitances include:

1. Gate-Source Capacitance (Cgs): It represents the capacitance between the gate and source terminals of the MOSFET. Cgs plays a role in determining the speed of the transistor’s switching and influences the control signals required for efficient operation.
2. Gate-Drain Capacitance (Cgd): This capacitance represents the capacitance between the gate and drain terminals. It affects the MOSFET’s switching speed and is important in high-frequency applications.
3. Drain-Source Capacitance (Cds): It represents the capacitance between the drain and source terminals. Cds affects the MOSFET’s switching characteristics and can influence the overall performance of the circuit.

Switching characteristics, such as rise time, fall time, and transition time, depend on the combined effects of the MOSFET’s capacitances, the driving circuit, and the load connected to the transistor. These parameters define how quickly the MOSFET can switch from the on state to the off state or vice versa, and they are important considerations in applications requiring fast switching speeds.

Frequently Asked Questions (FAQs)

● What are the typical applications of the MMBF170LT1G?

The MMBF170LT1G is commonly used in various applications such as power supplies, motor control circuits, audio amplification, LED lighting, and display driver circuits.

● What is the maximum voltage the MMBF170LT1G can handle?

The MMBF170LT1G has a voltage rating of 60V, meaning it can safely handle voltages up to 60V without experiencing breakdown or damage.

● What is the on-resistance (RDS(ON)) of the MMBF170LT1G?

The specific on-resistance value of the MMBF170LT1G can be found in its datasheet. It is typically low, indicating efficient power handling and reduced voltage drops.

● How can I protect the MMBF170LT1G from voltage spikes or electrostatic discharge (ESD)?

To protect the MMBF170LT1G from voltage spikes or ESD, you can employ techniques such as using clamping diodes, adding transient voltage suppressors (TVS) across the terminals, or utilizing ESD protection devices in your circuit design.

Final thoughts

The MMBF170LT1G is a compact and efficient solution for low-power applications. With its 60V voltage rating and low on-resistance (RDS(ON)), it handles various voltage requirements while minimizing power dissipation. Its versatility suits a wide range of applications, from power supply switching to motor control and audio amplification. Consider proper biasing, heat dissipation, and protection against voltage spikes and ESD when designing with the MMBF170LT1G. Unlock its potential for efficient performance in your electronic designs. Contact us at ICRFQ for sourcing and further assistance.

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