Part Number: MR4A16BCYS35R

Manufacturer: Everspin Technologies Inc.


Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of MR4A16BCYS35R

Datasheet  MR4A16BCYS35R datasheet
Category Integrated Circuits (ICs)
Family Memory
Manufacturer Everspin Technologies Inc.
Packaging Tape & Reel (TR)
Part Status Active
Format – Memory RAM
Memory Type MRAM (Magnetoresistive RAM)
Memory Size 16M (1M x 16)
Speed 35ns
Interface Parallel
Voltage – Supply 3 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 54-TSOP (0.400″, 10.16mm Width)
Supplier Device Package 54-TSOP2


In today’s fast-paced world, data storage and retrieval are essential components of every electronic system. Whether it’s your smartphone, a cutting-edge gaming console, or a mission-critical industrial application, the requirement for efficient, dependable, and non-volatile memory solutions is vital. The MR4A16BCYS35R is a memory technology game changer.

Introduction to the MR4A16BCYS35R

The MR4A16BCYS35R is a revolutionary 16,777,216-bit magnetoresistive random access memory (MRAM) device that has been methodically constructed and structured into 1,048,576 16-bit words. This revolutionary memory module has a slew of characteristics that make it an excellent choice for a variety of applications. Let’s go into the specifics.

Key Features of the MR4A16BCYS35R

● Fast and Efficient

The MR4A16BCYS35R’s fast 35 ns read/write cycle ensures that your data is accessible and stored quickly and without apparent lag. It also has SRAM-compatible timing, allowing it to fit effortlessly into your existing systems.

● Non-volatile Data Storage

One of the MR4A16BCYS35R’s notable advantages is its capacity to retain data integrity for over 20 years, even in variable temperature circumstances. Regardless of the climate, your vital data is always secure and accessible.

● Endurance Beyond Compare

Unlike typical memory solutions, which degrade over time, the MR4A16BCYS35R provides limitless read and write endurance. This means that your memory module will continue to function properly day after day.

● Error Correction

The MR4A16BCYS35R contains an inbuilt single-bit error correction algorithm with 7 ECC parity bits for every 64 data bits to assure data accuracy and dependability. This comprehensive mistake correction method reduces the possibility of data corruption.

● Built-in Power Loss Protection

The MR4A16BCYS35R includes low-voltage inhibit circuitry, which protects your data during power outages by prohibiting writes with voltages that are outside of specification. Even in adverse situations, your data remains protected.

● Temperature Options

This adaptable memory module meets a variety of temperature requirements, with commercial temperature (0 to +70 °C) and industrial temperature (-40 to +85 °C) operation options available. It is intended to work flawlessly in a variety of settings.

● Compact and Compliant

The MR4A16BCYS35R is available in two handy package sizes: a 48-pin ball grid array (BGA) package with a tiny footprint and a 54-pin thin small outline package (TSOP Type 2). These RoHS-compliant packaging are compatible with low-power SRAM and other nonvolatile RAM devices.

Key Features of the MR4A16BCYS35R

  • Fast and Efficient Operation (35 ns read/write cycle): The MR4A16BCYS35R has a read/write cycle time of 35 nanoseconds. This quick procedure ensures that data is accessible and stored with low latency, making it perfect for applications that require speed and responsiveness.
  • For Over 20 Years of Nonvolatile Data Storage: Data integrity is critical, and the MR4A16BCYS35R ensures it. Regardless of external circumstances, your data remains intact and accessible for over two decades. This type of long-term non-volatile storage avoids the need for periodic data backups and assures that historical data is always accessible.
  • Unlimited Read and Write Endurance: Unlike traditional memory solutions that degrade with time, the MR4A16BCYS35R provides limitless read and write endurance. This means you can read from and write to the memory module as frequently as you like without worrying about wear and tear, extending the life of your system.
  • Capabilities for Error Correction: The MR4A16BCYS35R has a powerful internal error correction code (ECC) system with 7 ECC parity bits for every 64 data bits. This technology reduces the danger of data corruption while also improving data correctness and overall system stability.
  • Power Loss Protection: The MR4A16BCYS35R is equipped with low-voltage inhibit circuitry to protect your data during power outages. It inhibits writes with out-of-specified voltage, ensuring data security and consistency even in uncertain power settings.
  • Temperature Options for Versatility: This memory module provides temperature versatility, with operating temperatures ranging from 0 to +70 °C and -40 to +85 °C. It is designed to perform well in a variety of environmental situations, making it suited for a wide range of applications.
  • Packaging that is both compact and compliant: The MR4A16BCYS35R is offered in two RoHS-compliant compact packages: a 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are intended to be easily integrated and compatible with a variety of system architectures.

Benefits of Choosing the MR4A16BCYS35R

  • Replacing Multiple Memory Types Simplifies System Design: The MR4A16BCYS35R is a versatile memory solution capable of replacing FLASH, SRAM, EEPROM, and BBSRAM in a variety of systems. This simplifies your system design by lowering complexity, component count, and development time. A single memory module that performs various tasks simplifies your engineering efforts.
  • Increased Reliability: In comparison to Battery-Powered SRAM Alternatives: The MR4A16BCYS35R is a more reliable alternative to battery-backed SRAM in applications that previously relied on it. It reduces operational expenses and the danger of data loss due to battery failure by eliminating the requirement for battery maintenance. Your vital data is kept safe and accessible, improving overall system reliability.

Incorporating the MR4A16BCYS35R into your design not only optimizes performance but also improves system reliability and efficiency, making it a compelling solution for a wide range of applications in the ever-changing world of electronics.


  1. Automotive Systems:Enhances infotainment and advanced driver assistance systems (ADAS) with quick data access.
  2. Industrial Automation:Ideal for PLCs and robotics, ensuring data integrity and fast control logic execution.
  3. Aerospace and Defense:Reliable storage for avionics, radar, and surveillance equipment, even in harsh conditions.
  4. Consumer Electronics:Speeds up smartphones, gaming consoles, and tablets for smoother user experiences.
  5. Medical Devices:Enables quick access to medical images and patient data in imaging equipment and patient monitors.
  6. Energy Storage and Grid Management:Supports smart grids and battery management for efficient energy distribution.
  7. Networking and Telecommunications:Improves data transmission efficiency in routers, switches, and base stations.
  8. Data Centers:Enhances data center performance with high-speed caching and data acceleration.
  9. IoT (Internet of Things):Provides reliable data storage for IoT devices deployed in remote or harsh environments.
  10. Space Exploration:Ensures data integrity for space probes, rovers, and missions, supporting scientific research and exploration.


In conclusion, the MR4A16BCYS35R provides a compelling memory solution for a wide range of applications. It excels in speed and dependability, with 35 ns read/write cycles, over 20 years of non-volatile data storage, limitless endurance, and improved error correction.

The primary advantages are obvious: it simplifies system designs by replacing various memory types and improves reliability by eliminating the need for battery-backed SRAM. The MR4A16BCYS35R improves performance and longevity in automotive, industrial, aerospace, and consumer electronics. It’s the best option for anyone looking for high-performance, trustworthy memory technology.

Elevate your projects with the MR4A16BCYS35R from ICRFQ, China’s leading supplier of electrical components, and seize the future of FPGA technology now. Investigate our offerings to discover a world of possibilities for your applications. Don’t pass up a cutting-edge solution for your projects.

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Kevin Chen