S25FL128SAGBHI200 IC

Technical Specifications of S25FL128SAGBHI200

Datasheet	S25FL128SAGBHI200 datasheet
Category	Integrated Circuits (ICs)
Family	Memory
Manufacturer	Cypress Semiconductor Corp
Series	FL-S
Packaging	Tray
Part Status	Active
Format – Memory	FLASH
Memory Type	FLASH – NOR
Memory Size	128M (16M x 8)
Speed	133MHz
Interface	SPI Serial
Voltage – Supply	2.7 V ~ 3.6 V
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	24-TBGA
Supplier Device Package	24-BGA (6×8)

Introduction

The Infineon S25FL128SAGBHI200 is a powerful and versatile solution in the area of non-volatile memory solutions. This in-depth tutorial will provide you a thorough grasp of this unique device’s capabilities, architecture, applications, and much more.

Introduction to S25FL128SAGBHI200

Infineon, a major semiconductor manufacturer, created the S25FL128SAGBHI200 flash non-volatile memory chip. It is a member of the S25FL family of devices, which are noted for their cutting-edge technology and great performance. Let’s look at the essential aspects that distinguish this smartphone.

Cutting-Edge Technology

The S25FL128SAGBHI200 uses Infineon’s MIRRORBITTM technology, which allows two data bits to be stored in each memory array transistor. This novel technique improves data density and efficiency, making it an excellent solution for a variety of applications.

Eclipse Architecture for Improved Performance

One of this device’s notable characteristics is its Eclipse architecture, which is supposed to greatly improve program and erase performance. A Page Programming Buffer is included in this architecture, allowing for the programming of up to 256 bytes in a single operation. When compared to previous SPI flash memory technologies, this leads in faster and more efficient programming and erase procedures.

SPI Multi-I/O Interface

The Serial Peripheral Interface (SPI) with Multi-I/O capabilities connects the S25FL128SAGBHI200 to a host system. It supports typical Single I/O (SIO) serial commands as well as Dual I/O (DIO) and Quad I/O (QIO) serial commands as options. This adaptability in the interface, known as SPI Multi-I/O (MIO), enables efficient communication with a wide range of host systems.

DDR Read Commands:

DDR Read Commands provide Double Data Rate (DDR) read commands, allowing address and read data to be transferred on both clock edges.

This interface mode maximizes data transfer efficiency and can match or exceed the performance of typical parallel interface NOR flash memories by leveraging DDR technology.

The S25FL128SAGBHI200 is adaptable to diverse system needs thanks to these interface options, ensuring compatibility and ease of integration. This flash memory device provides a solution adapted to your individual needs, whether you require normal SPI connectivity or high-speed data transfer. Its adaptability makes it a useful asset for a wide range of embedded applications that require dependable, high-performance memory storage.

Impressive Performance and Speed

The S25FL128SAGBHI200’s Eclipse architecture includes a Page Programming Buffer. In a single operation, this buffer can program up to 128 words (256 bytes) or 256 words (512 bytes). As a result, it has far faster programming and erasing times than prior SPI flash memory technologies.

Furthermore, the device supports direct code execution from flash memory, a technology known as eXecute-in-Place (XIP). When used with QIO or DDR-QIO instructions at higher clock rates, the instruction read transfer rate can match or even exceed that of typical parallel interface NOR flash memories. This is accomplished while significantly lowering signal counts.

Ideal Applications for the S25FL128SAGBHI200

The S25FL128SAGBHI200 is a flash non-volatile memory device that is versatile, fast, and has advanced features. Because of its extensive capabilities, it is a suitable solution for a wide range of embedded applications. Here are some ideal applications for the S25FL128SAGBHI200:

● Code Shadowing

For failure tolerance, code shadowing includes keeping duplicate copies of critical code.

Redundant code storage allows continuing operation in the case of code corruption or failures in mission-critical systems where system stability and dependability are crucial, such as industrial automation, automobile control systems, or aerospace applications. Because of its high density and versatile interface options, the S25FL128SAGBHI200 is an excellent solution for code shadowing applications.

● Execute-in-Place (XIP)

The ability to run code directly from flash memory, removing the requirement to copy code to RAM for execution, is referred to as XIP.

The S25FL128SAGBHI200’s high-speed read capabilities and advanced interface options enable efficient code execution directly from flash memory, resulting in improved system responsiveness and reduced memory footprint in applications where minimizing memory usage and maximizing system performance are critical, such as embedded systems, IoT devices, or real-time control systems.

● Data Storage

Data storage that is efficient for a variety of purposes. The S25FL128SAGBHI200 is a superb choice in settings requiring dependable and high-capacity data storage. This flash memory device provides the flexibility, endurance, and data retention required for data storage applications across industries such as consumer electronics, IoT devices, and data loggers, whether it’s storing configuration data, user-generated content, log files, or system parameters.

In summary, the versatility, sophisticated features, and high-performance characteristics of the S25FL128SAGBHI200 make it suited for a wide range of embedded applications. Whether you need to assure fault tolerance with code shadowing, increase system speed with XIP, or provide dependable data storage, this flash memory device provides a dependable and efficient solution to match your individual application requirements. Its adaptability makes it a valuable component in a variety of industries, allowing for the development of sturdy and high-performance embedded systems.

Notable Features

The S25FL128SAGBHI200 comes equipped with several remarkable features:

• CMOS 3.0 V Core: Ensures compatibility with a wide range of systems.
• Common Flash Interface (CFI) Data: Provides valuable configuration information for ease of use.
• Programming and Erase Options: Offers options for page programming and erase speeds ranging from 0.5 to 1.5 MBps.
• Cycling Endurance: With a minimum of 100,000 program-erase cycles, it guarantees durability and reliability.
• Data Retention: A minimum of 20 years of data retention ensures data integrity over extended periods.
• Security Features: Incorporates an OTP (One-Time Programmable) array of 1024 bytes and block protection for data security.
• Advanced Sector Protection (ASP): Provides individual sector protection controlled by boot code or password for enhanced security.

Power Supply and Packaging

• The core supply voltage of the S25FL128SAGBHI200 is 2.7 V to 3.6 V, while the I/O supply voltage is 1.65 V to 3.6 V. Because of its wide voltage range, it is compatible with a variety of power systems.
• The S25FL128SAGBHI200 is available in two packaging options: SO16 and FBGA, giving you the flexibility to select the right package for your individual application needs.

Conclusion

In conclusion, the S25FL128SAGBHI200 is a top-tier flash non-volatile memory device, offering advanced technology, high performance, and versatility. Whether you need to store critical code, execute programs directly from memory, or ensure secure data storage, this device provides an all-encompassing solution for a wide range of embedded applications.

To learn more and purchase the S25FL128SAGBHI200, contact ICRFQ, your trusted electronic component distributor in China. Upgrade your network capabilities today!

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