Part Number: S25FL128SAGMFIR01

Manufacturer: Infineon Technologies


Shipped from: Shenzhen/HK Warehouse

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Technical Specifications of S25FL128SAGMFIR01

Datasheet  S25FL128SAGMFIR01 datasheet
Category Integrated Circuits (ICs)
Family Memory
Manufacturer Cypress Semiconductor Corp
Series FL-S
Packaging Tube
Part Status Active
Format – Memory FLASH
Memory Type FLASH – NOR
Memory Size 128M (16M x 8)
Speed 133MHz
Interface SPI Serial
Voltage – Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 16-SOIC (0.295″, 7.50mm Width)
Supplier Device Package 16-SO


The Infineon S25FL128SAGMFIR01 is at the cutting edge of flash memory technology. This device, part of the S25FL series, combines cutting-edge features and great performance to cater to a wide range of embedded applications. In this extensive guide, we will delve into the complexities of the S25FL128SAGMFIR01, investigating its capabilities, functions, and applications.

Key Features of the S25FL128SAGMFIR01

The S25FL128SAGMFIR01 is a flash memory device with a number of innovative characteristics that set it apart from its predecessors and its competitors. The following are the major characteristics that define the S25FL128SAGMFIR01:

MIRRORBIT™ Technology

MIRRORBIT™ technology is a game-changing breakthrough that transforms data storage within the S25FL128SAGMFIR01. This is accomplished by enabling two data bits to be stored within each memory array transistor. This brilliant architecture effectively doubles storage capacity while also improving data integrity and dependability.

Eclipse Architecture

The Eclipse architecture is at the heart of the S25FL128SAGMFIR01, and it is critical to its performance. When compared to prior generations of SPI flash memory devices, this architecture improves program and erase operations, resulting in substantially faster and more efficient data processing.

65-nm Process Lithography

The S25FL128SAGMFIR01 is manufactured with precision and efficiency thanks to the utilization of superior 65-nm process lithography. This technology improves the overall performance and stability of flash memory, making it a reliable alternative for demanding applications.

Interface Options of the S25FL128SAGMFIR01: Versatility for Varied Needs

The Infineon S25FL128SAGMFIR01 is more than just a flash memory device with impressive characteristics; it also includes a variety of adaptable interface options to meet a variety of communication needs. In this section, we’ll go over each interface choice in depth, explaining how it improves the S25FL128SAGMFIR01’s adaptability to different applications.

Single I/O (SIO)

The S25FL128SAGMFIR01’s primary communication mode is the Single I/O (SIO) interface. It uses the standard Serial Peripheral Interface (SPI) with single-bit serial input and output. SIO is appropriate for exchanging basic data between the host system and the flash memory device. While it is the most basic mode, it provides critical functionality for many applications.

Dual I/O (DIO) and Quad I/O (QIO)

The S25FL128SAGMFIR01 has Dual I/O (DIO) and Quad I/O (QIO) interface options for applications that require larger data transfer speeds. These modes allow the device to employ two or four bits for data input and output at the same time, considerably boosting data throughput over the Single I/O interface. When it comes to time-sensitive data access, DIO and QIO are extremely useful.

SPI Multi-I/O (MIO)

The SPI Multi-I/O (MIO) interface expands on adaptability. It combines Single I/O (SIO), Dual I/O (DIO), and Quad I/O (QIO) capabilities, allowing the S25FL128SAGMFIR01 to adapt to a wide range of communication requirements. This multi-width interface supports both basic and high-speed data transfer requirements, making the device extremely versatile in a variety of applications.

DDR Read Commands

The S25FL128SAGMFIR01 supports DDR (Double Data Rate) read instructions as well. These commands allow the device to transfer data and transfer addresses on both the rising and falling edges of the clock signal. DDR read commands improve data retrieval speed, making them especially useful for applications that require quick access to stored data.

Because of these interface possibilities, the S25FL128SAGMFIR01 is a versatile solution for developers and engineers in a variety of industries. This flash memory device can be customized to meet your individual needs, whether you need basic data storage or high-speed data access. In the following sections of this book, we will delve deeper into the programming and performance advantages of the S25FL128SAGMFIR01, assisting you in realizing its full potential in your projects and applications.

Efficient Programming and Erasing with the S25FL128SAGMFIR01

Because to its superior Eclipse design, the S25FL128SAGMFIR01 flash memory device has efficient programming and erasing capabilities.

● Page Programming Buffer

The S25FL128SAGMFIR01’s Page Programming Buffer enables efficient programming of up to 256 bytes of data in a single operation. This function simplifies and speeds up data storage, making it appropriate for applications that require frequent data updates.

● Swift Program and Erase Operations

The Eclipse design improves program and erase speed, making these operations faster and more efficient. This efficiency is useful for applications that require frequent data changes, as it provides both speed and dependability.

● Execute-in-Place (XIP)

The S25FL128SAGMFIR01 supports XIP, which allows code to be executed directly from flash memory. This reduces the requirement for code transfer to RAM, resulting in a more efficient system architecture and improved performance. XIP is especially useful for embedded systems with limited resources, since it results in faster boot times and improved system responsiveness.

In conclusion, the S25FL128SAGMFIR01’s programming and erasing capabilities, as well as XIP support, make it a versatile and efficient solution for a wide range of applications, ranging from quick data storage to optimized code execution.

Performance Benefits

● High-Speed Clock Rates

The S25FL128SAGMFIR01 meets or exceeds the performance of typical parallel interface NOR flash memories while dramatically decreasing signal counts by utilizing higher clock rates, particularly with QIO or DDR-QIO commands.

● Parallel Interface Comparison

When compared to parallel interfaces, the S25FL128SAGMFIR01 offers significant advantages in terms of performance and signal handling.


Because of its adaptability, the S25FL128SAGMFIR01 is suitable for a wide range of embedded applications:

● Shadowing of the Code

A primary application of this flash memory device is efficiently shadowing programs for execution in embedded systems.

● Storage of Data

In many applications, reliable data storage is critical, and the S25FL128SAGMFIR01 shines in this aspect.

● Systems for Embedded Computing

The S25FL128SAGMFIR01’s flexibility, speed, and low power consumption help embedded systems.

● Integration and Compatibility

Understanding how the S25FL128SAGMFIR01 communicates with host systems and how it interacts with other components is critical for seamless integration.

● Connectivity to the Host System

The SPI interface of the S25FL128SAGMFIR01 allows simple connectivity to host systems, making integration easier.

● Other Component Compatibility

It is critical to ensure that the S25FL128SAGMFIR01 is compatible with other components in your system in order to achieve peak performance.


Finally, the S25FL128SAGMFIR01 is a powerful flash memory device noted for its great performance, versatility, and reliability. It stays at the forefront of flash memory innovation, providing faster and more efficient data storage and execution.

Unlock the full power of your embedded systems today with the S25FL128SAGMFIR01. For more information and orders, contact ICRFQ, an established electronic component wholesaler in China, and embrace the future of flash memory technology.

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Kevin Chen