Part Number: SIB456DK-T1-GE3

Manufacturer: Vishay Siliconix

Description: MOSFET N-CH 100V 6.3A PPAK SC75

Shipped from: Shenzhen/HK Warehouse

Stock Available: Check with us

Technical Specifications of SIB456DK-T1-GE3

Datasheet  SIB456DK-T1-GE3 datasheet
Category Discrete Semiconductor Products
Family Transistors – FETs, MOSFETs – Single
Manufacturer Vishay Siliconix
Series TrenchFET?
Packaging Cut Tape (CT)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current – Continuous Drain (Id) @ 25°C 6.3A (Tc)
Rds On (Max) @ Id, Vgs 185 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 130pF @ 50V
Power – Max 13W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK? SC-75-6L
Supplier Device Package PowerPAK? SC-75-6L Single


MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are important electronic components that are widely utilized in a variety of applications due to their precision and efficiency in signal control.

The SIB456DK-T1-GE3, an N-Channel 100 V (Drain-Source) MOSFET, is particularly notable. In this article, we’ll look at its relevance and applications, as well as why it’s so important in modern electronics.

Understanding MOSFETs

A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is a crucial semiconductor device found in many electrical devices. It’s an abbreviation for its design and functionality.

Basic Function

A MOSFET controls the flow of electrical current between its source (S), drain (D), and gate (G) connections at its core. It works by changing the electric field within a semiconductor channel. When a voltage is supplied to the gate terminal, the flow of charge carriers (electrons or holes) between the source and drain terminals is either enhanced (N-Channel MOSFET) or depleted (P-Channel MOSFET). Because of this control, MOSFETs can function as switches or amplifiers, making them useful components in electronic circuits.

The Importance of N-Channel MOSFETs

N-Channel MOSFETs are important in electronics because they allow electrons as charge carriers to flow from the source to the drain when a positive voltage is applied to the gate. Because of this, they are more often employed than P-Channel MOSFETs, particularly in low-side switching and high-performance applications. They provide efficient switching and are frequently used in applications that require high-speed operation with low power dissipation.

Features of SIB456DK-T1-GE3 N-Channel MOSFET

The SIB456DK-T1-GE3 N-Channel MOSFET has numerous notable characteristics that make it an appealing choice for a variety of electrical applications:

TrenchFET® Power MOSFET

This MOSFET employs TrenchFET® technology, which improves its performance. TrenchFETs are well-known in power switching applications for their efficiency and dependability.

  • PowerPAK® SC-75 Thermally Enhanced Package: The SIB456DK-T1-GE3 is housed in a small PowerPAK® SC-75 package, which has various benefits:Small Footprint Area: Because the package design requires less area on a printed circuit board (PCB), it is suited for tiny electrical gadgets.
  • Low On-Resistance: Because this MOSFET has a low on-resistance (Rds(on)), it loses very little power when conducting current. Low Rds(on) is preferred for effective power management.

100% Rg and UIS Tested

Thorough testing confirms the SIB456DK-T1-GE3’s dependability and robustness. It has passed 100% Rg (Gate Resistance) and UIS (Unclamped Inductive Switching) testing, proving its capacity to withstand electrical stress and transient situations without sacrificing performance or lifetime.

These characteristics work together to make the MOSFET suitable for a wide range of applications where efficient power switching and space limits are essential concerns. The SIB456DK-T1-GE3 offers a mix of performance and reliability that makes it a desirable component in electrical design, whether utilized in consumer electronics, power supply, or industrial equipment.

Applications of the SIB456DK-T1-GE3 N-Channel MOSFET

The SIB456DK-T1-GE3 MOSFET is well-suited for a range of applications, including:

● DC/DC Converters

The MOSFET is critical in DC/DC converters for efficiently regulating voltage levels. The low on-resistance and quick switching speed of the SIB456DK-T1-GE3 assist to eliminating power losses and ensuring exact voltage conversion.

● Full-Bridge Converters

MOSFETs are essential for controlling current flow in full-bridge converters, which are often encountered in many power electronics applications. Because of its small size and efficient switching, this MOSFET is an important component for full-bridge converter designs, providing effective power conversion.

● Power Bricks

Power bricks, also known as power modules, are used to deliver regulated power in a compact and standardized package. The tiny footprint and low on-resistance of the SIB456DK-T1-GE3 are advantageous in power brick designs, allowing for great efficiency and dependability.

● POL (Point of Load) Power

POL power solutions are used to provide voltage regulation at the point of consumption. The efficiency and robust performance of this MOSFET are advantageous in POL power applications, delivering reliable and efficient power delivery to vital components.

The SIB456DK-T1-GE3 N-Channel MOSFET offers the advantages of efficient power switching, compact size, and reliability in these applications. Its capacity to withstand high currents and voltage levels while consuming little power makes it an excellent choice for designers and engineers developing power management systems.

Handling, Storage, and Protection Guidelines for the SIB456DK-T1-GE3 N-Channel MOSFET

Electronic components such as the SIB456DK-T1-GE3 require careful handling, storage, and protection to ensure their longevity and reliability. Follow these tips to keep the MOSFET in good working order:


Static Electricity Precautions

  • When handling the MOSFET, always wear an anti-static wrist strap and use an anti-static mat.
  • Avoid operating in static-charged surroundings, as electrostatic discharge (ESD) can damage sensitive components.

Clean Hands and Workspace

  • Before handling the MOSFET, make sure your hands are clean and clear of oils or pollutants.
  • To avoid debris or pollutants coming into touch with the component, work in a clean, static-free environment.

Gentle Handling

  • Handle the MOSFET with caution, avoiding excessive force or bending of the leads.
  • Do not contact the exposed metal components of the leads with your naked hands.


Anti-Static Packaging

  • Store the MOSFET in its original anti-static packing or in anti-static bags while not in use.
  • Keep conductive materials that can induce ESD away from the MOSFET.

Temperature and Humidity Control

  • Maintain the MOSFET in a temperature and humidity controlled environment.
  • Extreme temperatures and humidity should be avoided because they can impair component performance.


In conclusion, the SIB456DK-T1-GE3 N-Channel MOSFET is a versatile and indispensable component, thanks to its advanced features and efficiency. It finds applications in DC/DC converters, full-bridge converters, power bricks, and more, contributing to improved energy efficiency and reliability.

To ensure its longevity and performance, remember to handle, store, and protect it carefully. When sourcing this MOSFET or other electronic components, consider ICRFQ , a leading distributor in China, for your needs.

Incorporate the SIB456DK-T1-GE3 into your projects to benefit from its efficiency, reliability, and versatility, whether you’re an experienced professional or an electronics enthusiast. This MOSFET will undoubtedly enhance your electronic endeavors.

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