STF24N60M2 MOSFET

Technical Specifications of STF24N60M2

Datasheet	STF24N60M2 datasheet
Category	Discrete Semiconductor Products
Family	Transistors – FETs, MOSFETs – Single
Manufacturer	STMicroelectronics
Series	MDmesh? II Plus
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	600V
Current – Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	190 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) @ Vgs	29nC @ 10V
Input Capacitance (Ciss) @ Vds	1060pF @ 100V
Power – Max	30W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

Introduction

The STF24N60M2 is a cutting-edge N-channel Power MOSFET created with MDmesh M2 technology. The STF24N60M2 delivers outstanding performance because to its low on-resistance, enhanced switching properties, and suited for high efficiency converters. With the help of this manual, you will have a thorough grasp of this remarkable device as we look at its features, design, and uses. Find out how the STF24N60M2 can transform high efficiency converters by diving in and learning more.

Overview of STF24N60M2

MOSFETs are crucial parts of power electronics because they function as effective switches for managing electrical signals. Thanks to its high performance and efficiency, the STF24N60M2 MOSFET stands out.

The STF24N60M2 offers benefits including minimal on-resistance and enhanced switching characteristics because it was constructed utilizing MDmesh M2 technology. It’s low on-resistance improves energy efficiency and cuts down on power losses, making it perfect for high efficiency converters.

The device’s improved switching properties allow for quick and effective switching transitions, enhancing system performance as a whole. These desirable attributes are made possible by the strip arrangement and enhanced vertical structure of MDmesh M2 technology.

STF24N60M2 Key Features and Specifications

A variety of technical features contribute to the STF24N60M2 MOSFET’s outstanding performance and efficiency. Let’s examine these parameters and how they affect the capabilities of the device:

• Ratings for voltage and current The STF24N60M2 is made to withstand high current and voltage levels. It normally has a continuous drain current (ID) rating of 24 amps and a maximum drain-source voltage (VDS) value of, say, 600 volts. These ratings guarantee that the device can manage high power requirements across a range of applications.
• RDS(on): On-resistance The STF24N60M2 has an impressively low on-resistance, which is normally in the range of a few tens of milliohms. This low on-resistance leads to less power loss and greater energy effectiveness. The MOSFET has less voltage drops during operation, which reduces power losses and improves system effectiveness.
• Gate Charge (Qg): This specification describes the gate charge needed to turn a MOSFET on or off. The STF24N60M2 generally has a low gate charge, which makes switching operations quick and effective. Lower gate charge improves the device’s overall performance by lowering switching losses.

Low input, output, and reverse transfer capacitances, such as Ciss (input capacitance), Coss (output capacitance), and Crss (reverse transfer capacitance), are characteristics of the STF24N60M2. Low capacitance values result in higher switching efficiency and lower power losses since they require less energy to charge and discharge the MOSFET.

How these Features Contribute to Performance and Efficiency

The STF24N60M2’s outstanding performance and efficiency in power electronics applications are directly attributed to its technological parameters. This is how:

Energy efficiency is increased and power losses are reduced by low on-resistance (RDS(on)). By lowering voltage drops across the MOSFET, it makes power conversion in high current applications more effective.

Low gate charge (Qg), which promotes quick and effective switching, lowers switching losses. As a result, the system performs better overall and is more responsive.

The energy needed to charge and discharge the MOSFET is reduced by low input, output, and carrier capacitances (Ciss, Coss, and Crss). As a result, switching times are shorter, power losses are reduced, and efficiency is increased.

Comparison with Other MOSFETs

The STF24N60M2 is a highly competitive MOSFET in terms of performance and efficiency, thanks to its low on-resistance, excellent switching properties, and low capacitances. It has excellent power dissipation properties that make power conversion more effective and lower the device’s thermal stress.

The STF24N60M2 stands out when compared to alternative MOSFETs due to its optimized design and MDmesh M2 technology, which help to produce a low on-resistance and better switching performance. The STF24N60M2 is an appealing option for high efficiency converters and demanding power electronics applications because of these features.

Design Considerations

The STF24N60M2 is a highly competitive MOSFET in terms of performance and efficiency, thanks to its low on-resistance, excellent switching properties, and low capacitances. It has excellent power dissipation properties that make power conversion more effective and lower the device’s thermal stress.

The STF24N60M2 stands out when compared to alternative MOSFETs due to its optimized design and MDmesh M2 technology, which help to produce a low on-resistance and better switching performance. The STF24N60M2 is an appealing option for high efficiency converters and demanding power electronics applications because of these features.

The STF24N60M2 offers the following advantages as a result of its improved vertical structure and strip layout:

Low On-Resistance

By reducing the resistance route across the MOSFET, the improved strip architecture lowers on-resistance. Due to the low on-resistance, there are less voltage drops across the device when it is operating, which lowers power losses and boosts energy efficiency.

Improved vertical structure improves the distribution of electric field lines, which reduces parasitic capacitances and results in improved switching characteristics. Faster switching times and lower switching losses are the results of this optimization. The MOSFET can switch between the on and off states more quickly, enhancing the responsiveness and performance of the entire system.

Practical Guidelines for Incorporating STF24N60M2 in High Efficiency Converter Designs

In high efficiency converter designs, take into account the following useful recommendations:

● Thermal Management

To keep the MOSFET’s temperature within safe ranges, make sure that suitable heat sinking and thermal management are in place. This maintains the effectiveness and dependability of it.

● Gate Drive Electronics

Create a suitable gate drive circuit to make sure the MOSFET’s gate terminal is driven with enough voltage and current. In addition to minimizing switching losses, this enables quick and effective switching.

● PCB Design

Examine the PCB layout carefully, paying close attention to the high current lines and the connections between the MOSFET and the remainder of the circuit. Signal integrity will be preserved and power losses will be minimized by using proper trace widths and short, low inductance connections.

To protect the MOSFET from overcurrent, overvoltage, and other fault circumstances, implement adequate protective circuits. This increases the longevity of the gadget and helps to prevent failure.

You can efficiently use the STF24N60M2 in high efficiency converter designs, optimizing its performance and maximizing energy efficiency in your applications, by according to these useful recommendations.

Conclusion

In conclusion, the STF24N60M2 MOSFET, leveraging MDmesh M2 technology, presents remarkable features such as low on-resistance and optimized switching characteristics, making it an excellent choice for high efficiency converters. Its technical specifications and innovative design elements contribute to improved performance and efficiency in power electronics applications.

By considering the integration of the STF24N60M2 in your projects, you can effectively minimize power losses and enhance energy efficiency. To explore further and unlock the full potential of the STF24N60M2 in your power electronics endeavors, we encourage you to reach out to ICRFQ. Take the first step towards an electrifying journey by connecting with ICRFQ to learn more and embark on your electronic adventure.

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