ISO5852SDWR
Part Number: ISO5852SDWR
Manufacturer: Texas Instruments
Description: DGTL ISO GATE DRVR 16SOIC
Shipped from: Shenzhen/HK Warehouse
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ICRFQ.com - Electronic Components Distributor in China Since 2003
Part Number: ISO5852SDWR
Manufacturer: Texas Instruments
Description: DGTL ISO GATE DRVR 16SOIC
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
Datasheet | ISO5852SDWR datasheet |
---|---|
Category | Isolators |
Family | Isolators – Gate Drivers |
Manufacturer | Texas Instruments |
Series | – |
Packaging | Tape & Reel (TR) |
Part Status | Active |
Technology | Capacitive Coupling |
Number of Channels | 1 |
Voltage – Isolation | 5700Vrms |
Common Mode Transient Immunity (Min) | 100kV/μs |
Propagation Delay tpLH / tpHL (Max) | 110ns, 110ns |
Pulse Width Distortion (Max) | – |
Rise / Fall Time (Typ) | 18ns, 20ns |
Current – Output High, Low | 1.5A, 3.4A |
Current – Peak Output | 2.7A, 5.5A |
Voltage – Forward (Vf) (Typ) | – |
Current – DC Forward (If) (Max) | – |
Voltage – Supply | 15 V ~ 30 V |
Operating Temperature | -40°C ~ 125°C |
Mounting Type | Surface Mount |
Package / Case | 16-SOIC (0.295″, 7.50mm Width) |
Supplier Device Package | 16-SOIC |
Approvals | CQC, CSA, UR, VDE |
The ISO5852S device runs at 5.7 kVRMS and is a MOSFET and IGBT reinforced isolated gate driver. It features split outputs with the designations OUTH and OUTL, each of which can deliver 2.5 A of source current and 5 A of sink current. A single supply that spans the voltage range of 2.25 V to 5.5 V powers the input side. The supply voltage on the output side might fluctuate between 15 V and 30 V at its greatest point. Two CMOS inputs that are complementary to one another control the output state of the gate driver.
The very short propagation period of 76 ns allows for precise output stage control. Internal desaturation (DESAT), a fault detection technique, can detect whether the IGBT is functioning under an overcurrent condition. After receiving a DESAT detect, the mute logic immediately stops the isolator’s output and starts a soft-turnoff procedure. The OUTL pin is pulled to a low state for a duration of 2 microseconds while the OUTH pin is deactivated throughout this process. The gate-driver output is forcibly pushed to the most negative supply potential, VEE2, when the OUTL pin gets close to 2 V with respect to it, which causes the IGBT to turn off immediately.
The ISO5852S is an isolated gate driver that works with MOSFETs and IGBTs. The input CMOS circuitry is isolated from the output power stage using silicon dioxide capacitive isolation. The input side IO circuitry includes interfaces with a microcontroller, gate drive control and RESET (RST) inputs, READY (RDY) and FAULT (FLT) alarm outputs, and READY (RDY) and FAULT (FLT) alarm outputs. A DESAT detection circuit and power transistors that produce 2.5-A pullup and 5-A pulldown currents to drive the capacitive load of the external power transistors are included in the power stage.
The DESAT detection circuit monitors the overvoltage in the IGBT collector-emitter during short circuit events. A transmitter and a receiver are part of the capacitive isolation core, which couples’ signals over the isolation barrier and downshifts the resulting low-swing signals to CMOS levels. The ISO5852S contains an active output pulldown function that maintains a low gate-driver output without the output supply voltage and an under-voltage lockout circuit that prohibits insufficient gate drive to the external IGBT. The ISO5852S also has an active Miller clamp function for unipolar supply operation, which prevents the external power transistor from turning on accidentally due to the Miller effect.
The ISO5852S has active Miller clamp compatibility for bipolar and unipolar power supplies. For use with bipolar power supplies, the IGBT must be disabled by applying a negative voltage to its gate in relation to its emitter for it to be operational. This stops the IGBT from accidentally coming on due to the Miller effect, which causes current to be generated from the collector to the gate of the device. Under these circumstances, connecting the CLAMP output of the gate driver to the IGBT gate is not only unnecessary, but it is also not a problem to do so. But, connecting the CLAMP output of the gate driver to the IGBT gate is not an issue.
In bipolar operation, the typical values of VCC2 and VEE2 are 15 volts and -8 volts, respectively, with respect to GND2. In a common configuration, for operation with a unipolar supply, VCC2 is linked to 15 V with respect to GND2, and VEE2 is connected to GND. In this application, Because the IGBT collector suffers a high voltage slew rate transition, the IGBT can turn on, which causes an additional charge to be stored in the IGBT Miller capacitance. Miller current is sunk through a low impedance CLAMP transistor to stop the IGBT from switching on. This is accomplished by connecting the CLAMP pin to the IGBT gate. Miller CLAMP is intended for use with Miller current up to 2 A. The current output of the CLAMP is activated when the IGBT is turned off, and the gate voltage drops below 2 V.
When the output side is disconnected from the power supply, the Active output pulldown feature guarantees that the IGBT gate OUTH/L is clamped to VEE2. This keeps the IGBT in a safe off-state.
To prevent any accidental turns of the IGBT, it is equipped with a feature called (UVLO) Undervoltage Lockout. If VCC1 falls below VIT-(UVLO1), the IGBT will shut off until VCC1 rises above VIT+, regardless of IN+, IN-, or RST input (UVLO1). If VCC2 falls below VIT-(UVLO2), the IGBT will shut off until VCC2 rises above VIT+, regardless of IN+, IN-, or RST input (UVLO2). The Under-Voltage Lock-Out (UVLO) pin on the input and output sides of the device provide an internal protection mechanism. RDY pin output is low if either the VCC1 or VCC2 supplies are inadequate, and high otherwise. The RDY pin notifies the microcontroller that the gadget is set up and ready to go.
Overcurrent in an IGBT triggers a soft-turn-off operation in which OUTH is disabled and OUTL is pulled down over a period of 2 microseconds. Desaturation functions by sending a failure signal over the isolation barrier, which forces the input side FLT output to go low and so blocks the isolator input. During the gradual power down, mute logic is engaged. When RDY is high, an active-low pulse at the RST input can be used to reset the FLT output condition, but only temporarily. Noise and hiccups are automatically filtered out using RST’s built-in filter. To activate or deactivate the input logic of a device, you must assert RST for at least the minimum time period (800 ns).
During short circuit conditions, current can be induced back into the gate-driver OUTH/L and CLAMP pins due to Miller capacitance between the IGBT collector and gate terminals. The voltages at the OUTH/L and CLAMP pins are clamped to levels just above the output side supply by internal protection diodes, which also aid in sinking the currents.
Finally, the ISO5852SDWR is an advanced reinforced isolated gate driver that provides precise control and protection for IGBTs and MOSFETs due to its many cutting-edge characteristics. It’s ideal for various uses thanks to its low propagation delay, high common-mode transient immunity, and fault-detection features. If you want to purchase the ISO5852SDWR or any other electronic components, ICRFQ is your ideal partner. We offer competitive pricing, fast delivery times, and outstanding customer service to ensure you have everything you need to complete your project successfully. Contact us today to learn more about our products and services and experience the benefits of working with a trusted and experienced supplier.
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