IXBH12N300
Part Number: IXBH12N300
Manufacturer: IXYS
Description: IGBT 3000V 30A 160W TO247
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
ICRFQ.com - Electronic Components Distributor in China Since 2003
Part Number: IXBH12N300
Manufacturer: IXYS
Description: IGBT 3000V 30A 160W TO247
Shipped from: Shenzhen/HK Warehouse
Stock Available: Check with us
Power electronics play a key part in a wide range of applications, from energy conversion to complex electronic systems, in today’s ever-changing technological landscape. The IXBH12N300, a high voltage, high gain BIMOSFETTM Monolithic Bipolar MOS Transistor, is a critical component that contributes to the efficiency and dependability of these systems. This comprehensive guide delves into the IXBH12N300’s characteristics, benefits, and applications, illuminating how this extraordinary device can help your projects.
The IXBH12N300 is a standout component in high-performance power electronics, featuring a variety of critical qualities that make it a worthwhile addition to a variety of applications. Let’s take a closer look at these features to see why the IXBH12N300 is a popular choice in the field of power transistors.
The IXBH12N300’s extraordinary high blocking voltage capabilities is one of its distinguishing qualities. With a rating of 3000 V, this transistor can withstand high electrical potential without failing. This capability is critical in applications where voltage surges or fluctuations are common, ensuring the circuit’s safety and reliability.
The IXBH12N300 is intended for international standard packages. This means it may be simply integrated into a wide range of circuits and systems, providing engineers and designers around the world with compatibility and ease of use. The availability of standard packages simplifies design and production procedures, making it an appealing option for a wide range of applications.
The IXBH12N300’s built-in anti-parallel diode is a big advantage. When the transistor is turned off, this diode offers a safe path for current to travel, preventing reverse voltage spikes that could otherwise harm the circuit. The presence of this diode is a critical safety feature, making the IXBH12N300 a dependable choice for applications requiring voltage protection.
The IXBH12N300 excels in efficiency, which is an important characteristic of any power electronics component. It has low conduction losses, which means that while the transistor is in the “on” state, it wastes less energy and generates less heat. This capability is especially useful in situations where energy efficiency is crucial, such as power supply and high-power systems.
Finally, the IXBH12N300 is a high voltage power transistor with a slew of amazing features. Because of its high blocking voltage, compliance with worldwide standard packaging, anti-parallel diode, and low conduction losses, it is an excellent choice for applications requiring high power handling, reliability, and efficiency. The IXBH12N300’s features ensure that it plays a critical part in reaching the appropriate performance and safety levels, whether you’re designing power supplies, UPS systems, laser generators, or any other high-voltage application.
The IXBH12N300 stands as a remarkable power transistor, offering not only a host of impressive features but also distinct advantages that set it apart from the competition. These two standout advantages, in particular, make the IXBH12N300 an invaluable component for a wide range of high-voltage applications.
To summarize, the IXBH12N300 is more than just another high-voltage power transistor; it has particular advantages that address the unique requirements of current power electronics. Its low gate drive demand simplifies design and lowers running costs, and its high power density enables efficient power handling in small places. Engineers and designers may optimize their systems for improved performance and cost savings by exploiting these benefits, making the IXBH12N300 a critical component in high-voltage applications where efficiency and space utilization are critical.
The IXBH12N300 is a high-performance BIMOSFETTM Monolithic Bipolar MOS Transistor with outstanding characteristics and benefits. It’s a flexible component in applications ranging from power supply to laser technology, thanks to its high voltage handling, low conduction losses, and low gate drive needs.
As technology advances, so does the demand for high-performance components like the IXBH12N300. By incorporating it into your designs, you can improve power density, efficiency, and reliability, all of which contribute to project success. The IXBH12N300 is a dependable choice for switched-mode power supply, laser generators, UPS systems, and other high-voltage, high-gain applications.
Connect with us at ICRFQ, a major electronic component distributor based in China that offers superior products at low costs, to learn more about the IXBH12N300’s possibilities.
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